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Une etude theorique de la photopile au silicium polycristallin a jonctions verticales paralleles en regime statique sous eclairement polychromatique et sous champ magnetique est presentee. La resolution de lequation de magneto-transportrelative a la densite des porteurs minoritaires de charge dans la base a permis de deduire les expressions du photocourant et de la resistance shunt (Rsh) de la photopile en fonction de la vitesse de recombinaison a la jonction et de la profondeur z de la photopile pour differentes valeurs du champ magnetique. &nbsp

The monochromatic absorption coefficient of silicon, inducing the depth of penetration of light into the base of the solar cell, is used through back surface recombination velocity expressions, to determine the optimum thickness necessary for the production of a large photocurrent. The absorption-generation-diffusion and recombination (bulk and surface) phenomena are taken into account in determining the optimum thickness of an n+-p-p+bifacial solar cell, for it manufacture process optimization. &nbsp

The optimum thickness of a silicon solar cell base is determined using phenomelogic parameters, which are the minority carriers diffusion coefficient and the recombination velocity at the back side, influenced by Lorentzs law and the Umklapp process.The results obtained are consistent with the generation of minority charge carriers deep in the base by a monochromatic light of long wavelength. &nbsp