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216 results on '"Meneghesso, Gaudenzio"'

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1. GaN-Based Lateral and Vertical Devices

4. Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations

6. GaN-Based Lateral and Vertical Devices

8. Defects, performance, and reliability in UVC LEDs

9. Robustness and reliability of high-power white LEDs under high-temperature, high-current stress

11. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis

12. Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

14. Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors

18. Modeling of the Electrical Characteristics and Degradation Mechanisms of UV-C LEDs

19. Modeling the Electrical Degradation of Micro-transfer-Printed 845 nm VCSILs for Silicon Photonics

22. Fast Characterization of Power LEDs: Circuit Design and Experimental Results

27. Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells

28. On the importance of Fast and Accurate LED Optical and Thermal Characterization: from visible use cases to UV technologies

29. Modeling the electrical characteristic and degradation mechanisms of UV-C LEDs

31. Defects, performance, and reliability in UVC LEDs

34. 15. GaN-Based Lateral and Vertical Devices

35. Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling.

36. Understanding the Optical Degradation of 845 nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits

39. Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence.

40. Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes.

41. Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

43. Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy

47. Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits

50. III-N optoelectronic devices: understanding the physics of electro-optical degradation

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