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Your search keyword '"Metal oxide semiconductor field effect transistors -- Analysis"' showing total 14 results
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14 results on '"Metal oxide semiconductor field effect transistors -- Analysis"'

1. ROHM's 4th Generation SiC MOSFET Bare Chips Adopted In Three EV Models Of ZEEKR From Geely

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Silicon carbide -- Analysis, Power electronics -- Analysis, Standard IC, Company joint venture, Electronics
Abstract

Byline: Sapana Pandya Integration in traction inverters extends the cruising range and improves performance ROHM has announced the adoption of power modules equipped with 4th generation SiC MOSFET bare chips [...]

Published
2024

2. ROHM's 4th Generation SiC MOSFET Bare Chips Adoptedin Three EV Models of ZEEKR from Geely

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Silicon carbide -- Analysis, Power electronics -- Analysis, Standard IC, Company joint venture
Abstract

Byline: TimesTech ROHM has announced the adoption of power modules equipped with 4th generation SiC MOSFET bare chips for the traction inverters in three models of ZEEKR EV brand from [...]

Published
2024

3. ROHM's 4th-Generation SiC MOSFET Bare Chips Adopted in 3 EV Models of ZEEKR from Geely

Subjects
Rohm Company Ltd. -- Joint ventures, Metal oxide semiconductor field effect transistors -- Analysis, Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Silicon carbide -- Analysis, Power electronics -- Analysis, Standard IC, Company joint venture, General interest, News, opinion and commentary
Abstract

KYOTO, Japan: ROHM Co., Ltd. has issued the following news release: ROHM Co., Ltd. has announced the adoption of power modules equipped with 4th-generation SiC MOSFET bare chips for traction [...]

Published
2024

4. ROHM's 4th-Generation SiC MOSFET Bare Chips Adopted in 3 EV Models of ZEEKR from Geely

Subjects
Rohm Company Ltd. -- Joint ventures, Metal oxide semiconductor field effect transistors -- Analysis, Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Silicon carbide -- Analysis, Power electronics -- Analysis, Standard IC, Company joint venture, Business, News, opinion and commentary
Abstract

- Integration in Traction Inverters Extends Cruising Range, Improving Performance - KYOTO, Japan, Sept. 5, 2024 /PRNewswire/ -- ROHM Co., Ltd. has announced the adoption of power modules equipped with [...]

Published
2024

5. ROHM's 4th Generation SiC MOSFET Bare Chips Adopted in Three EV Models of ZEEKR from Geely

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Silicon carbide -- Analysis, Power electronics -- Analysis, Standard IC, Company joint venture, General interest, News, opinion and commentary
Abstract

Santa Clara: ROHM Semiconductor today announced the adoption of power modules equipped with 4th generation SiC MOSFET bare chips for the traction inverters in three models of ZEEKR EV brand [...]

Published
2024

6. ROHM's New 5-Model Lineup of Low ON Resistance 100V Dual MOSFETs

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Circuit components -- Analysis, Wireless telecommunications equipment -- Analysis, Semiconductor device, Wireless telecommunications equipment
Abstract

Byline: Kajal Mehra ROHM has developed dual MOSFETs that integrate two 100V chips in a single package - ideal for fan motor drive applied in communication base stations and industrial [...]

Published
2023

7. ROHM announces new five models of low on-resistance 100V Dual MOSFETs

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Circuit components -- Analysis, Semiconductor device, General interest, News, opinion and commentary
Abstract

SANTA CLARA: ROHM Semiconductor announced new dual MOSFETs that integrate two 100V chips in a single package - ideal for fan motor drives applied in communication base stations and industrial [...]

Published
2023

8. ROHM's New Five-Model Lineup of Low ON-Resistance 100V Dual MOSFETs

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Circuit components -- Analysis, Wireless telecommunications equipment -- Analysis, Semiconductor device, Wireless telecommunications equipment, Consumer news and advice
Abstract

(GlobeNewswire) - ROHM Semiconductor today announced new dual MOSFETs that integrate two 100V chips in a single package ideal for fan motor drives applied in communication base stations and industrial [...]

Published
2023

9. Dynamic Properties of Ferroelectric III-V MOSFETs

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Business, international, European Union
Abstract

Dynamic Properties Of Ferroelectric Iii-V Mosfets High-Performance Ferroelectric Mosfets For Future High-Frequency Communicationsdeveloping Transistors With High Switching Speeds And High Output Powers Is Crucial For Their Operation At The Millimetre-Wave [...]

Published
2023

10. Electrothermal Models from Nexperia Cover MOSFET Temperature Range

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Semiconductor industry -- Analysis, Integrated circuits -- Analysis, Circuit components -- Analysis, Semiconductor chips -- Analysis, Semiconductor industry, Standard IC, Semiconductor device, Electronics
Abstract

Nexperia, the expert in essential semiconductors, today announced the release of new, enhanced Electrothermal models for its MOSFET devices. Semiconductor manufacturers commonly provide simulation models for their MOSFETs, but these [...]

Published
2022

11. Supply of zener diode characteristics apparatus, mosfet characteristics apparatus, superior travelling microscope, digital trainer to verify half full, verification of boolean identities, compound bar pendulam brass, maxwell vibration needle graduated

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Standard IC, Business, international
Abstract

Tenders are invited for Supply of zener diode characteristics apparatus, mosfet characteristics apparatus, superior travelling microscope, digital trainer to verify half full, verification of boolean identities, compound bar pendulam brass, [...]

Published
2023

12. Supply Of Zener Diode Characteristics Apparatus, Mosfet Characteristics Apparatus, Superior Travelling Microscope, Digital Trainer To Verify Half Full, Verification Of Boolean Identities, Compound Bar Pendulam Brass, Maxwell Vibration Needle Graduated, Be

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Standard IC, Business, international
Abstract

Tenders are invited for supply of zener diode characteristics apparatus, mosfet characteristics apparatus, superior travelling microscope, digital trainer to verify half full, verification of boolean identities, compound bar pendulam brass, [...]

Published
2023

13. University of Montpellier Researcher Provides New Data on Materials Science (Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET)

Subjects
Analysis, Standard IC, Silicon carbides -- Analysis, Burnout -- Analysis, Integrated circuits -- Analysis, MOSFET (Transistors) -- Analysis, Metal oxide semiconductor field effect transistors -- Analysis, Semiconductor chips -- Analysis, Silicon carbide -- Analysis, Burn out (Psychology) -- Analysis
Abstract

2022 JUN 17 (NewsRx) -- By a News Reporter-Staff News Editor at Science Letter -- Researchers detail new data in materials science. According to news reporting originating from the University [...]

Published
2022

14. Study Data from Department of ECE Update Knowledge of Computational Electronics (Variability Analysis of a Graded-channel Dual-material Double-gate Strained-silicon Mosfet With Fixed Charges)

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Integrated circuits -- Analysis, Semiconductor chips -- Analysis, Silicon -- Analysis, Standard IC, Electronics
Abstract

2022 FEB 8 (VerticalNews) -- By a News Reporter-Staff News Editor at Electronics Newsweekly -- Investigators discuss new findings in Electronics - Computational Electronics. According to news reporting originating in [...]

Published
2022

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