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109 results on '"Miyoshi, Makoto"'

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1. An independent hybrid imaging of Sgr A* from the data in EHT 2017 observations

2. JASMINE image simulator for high-precision astrometry and photometry

3. Black hole ring images from PSF structures

4. The jet and resolved features of the central supermassive black hole of M 87 observed with EHT in 2017 -- Comparison with the GMVA 86 GHz results

5. KNIFE, KAshima Nobeyama InterFErometer

7. Comments on 'Imaging Reanalyses of EHT Data'

8. The jet and resolved features of the central supermassive black hole of M 87 observed with EHT

9. ALMA Astrometry of the Objects within 0.5 pc of Sagittarius A$^\ast$

14. Sub-bandgap optical absorption processes in 300-nm-thick Al1−xInxN alloys grown on a c-plane GaN/sapphire template.

19. Characterizations of Subbandgap Optical Absorption in Undoped‐GaN and 90 nm‐Thick Al1−xInxN Thin Film on Sapphire Substrates Grown by Metal–Organic Chemical Vapor Deposition.

21. Oxidative Rearrangement Approach for the Ring Contraction of N−H Piperidines to Pyrrolidines.

24. JASMINE image simulator for high-precision astrometry and photometry

33. Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/m‐plane Sapphire Template.

34. ALMA Astrometry of the Nuclear Star Cluster

39. Development of JASMINE Data Analysis Software

43. AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

44. High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction field-effect transistors with a dual AlN/AlGaInN barrier layer.

45. Simulation Study on Novel GaN‐Based n−p−n Heterojunction Bipolar Transistors with a Quaternary AlGaInN Emitter and a Two‐Dimensionally Conductive Base.

46. Near-bandgap optical properties of Al1âˆ' x In x N thin films grown on a c -plane freestanding GaN substrate.

47. Oxidative Rearrangement of Secondary Amines Using Hypervalent Iodine(III) Reagent

48. DC and Pulse I–VCharacteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate

49. Near-bandgap optical properties of Al1-xInxN thin films grown on a c-plane freestanding GaN substrate

50. Phenotypic and Genetic Characteristics of Carbapenemase-Producing Enterobacterales Isolates at Okayama University Hospital.

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