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45 results on '"Morin, Pierre"'

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1. Guiding principles for the design of a chemical vapor deposition process for highly crystalline transition metal dichalcogenides

2. Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition

3. Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

6. Advanced EUV patterning of 2D TMDs for CMOS integration

8. Properties of ultrathin molybdenum films for interconnect applications

12. Guiding Principles for the Design of a Chemical Vapor Deposition Process for Highly Crystalline Transition Metal Dichalcogenides.

14. Fully Printed and Industrially Scalable Semitransparent Organic Photovoltaic Modules: Navigating through Material and Processing Constraints

16. Advanced EUV patterning of 2D TMDs for CMOS integration

19. 300mm in-line metrologies for the characterization of ultra-thin layer of 2D materials

20. Overview of scalable transfer approaches to enable epitaxial 2D material integration

21. Role of Nonfullerene Acceptor Impurities and Purification on the Efficiency and Stability of Organic Photovoltaics

25. (Invited) Addressing Key Process and Material Challenges to Enable 2D Transition Metal Dichalcogenide Channels in Advanced Logic Devices

27. Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films

29. Efficacy of Labour Provisions within Trade Agreements: Case Studies of the U.S-Cambodia Bilateral Trade Agreement and the Canada-United States-Mexico Agreement

30. KEL1 negative red cell transfusions for females of current or future child‐bearing potential: A clinical impact and feasibility study.

31. Properties of Ultrathin Molybdenum Films for Interconnect Applications

32. Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg

33. Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB

34. Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening

41. Chemical Vapor Deposition of a Single-Crystalline MoS2Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

44. A retrospective analysis of postpartum red blood cell transfusions at a tertiary care obstetric centre.

45. Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface.

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