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Laser annealing was employed to trigger the solid-state reaction of a thin Co film (2.5 nm) with undoped Si. A metastable disilicide layer was obtained after one laser pulse close to the melt threshold. Its diffraction pattern, relaxed lattice parameter, and residual resisitivity are consistent with the formation of the defective CsCl structure. The CoSi2 phase was found after prolonging the thermal treatment with additional pulses or rapid thermal annealing. Because CoSi is skipped in the phase sequence, CoSi2 layers are more uniform in thickness, have an increased superconductivity and a reduced formation temperature. This approach is compatible with the SALICIDE process and can be used to form smooth contacts in superconducting or regular transistors. [ABSTRACT FROM AUTHOR]

The reaction of a Ni 0.9 Pt 0.1 7 nm-thick thin film with the underlying Si(001) substrate as a function of the annealing temperature was studied using in situ XRD techniques as well as ex situ advanced XRD and TEM imaging on quenched samples. It was found that the Ni 0.9 Pt 0.1 /Si system initially evolves accordingly to diffusion controlled reactions via the development of nano-crystalline Ni-rich Ni 1 − x (Pt) Si x phases that combine the ability of fast kinetic growth and texture inheritance. The system remains then stable over some tens of degrees before Ni(Pt)Si nucleation occurs, once the related energetic barrier is overcome. It was additionally found that this newly observed phase sequence remains valid up to Ni 0.9 Pt 0.1 deposited layer thicknesses of about 16 nm, which is remarkable for such systems. [ABSTRACT FROM AUTHOR]