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28 results on '"Ngo, Thi-Huong"'

3. Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

Author

Kumari, Shikha, primary, Singh, Rashmi, additional, Kumar, Shivam, additional, Murty, N V L Narasimha, additional, Planson, Dominique, additional, Raynaud, Christophe, additional, Sonneville, Camille, additional, Morel, Hervé, additional, Phung, Luong Viet, additional, Ngo, Thi Huong, additional, de Mierry, Philippe, additional, Frayssinet, Eric, additional, Cordier, Yvon, additional, Maher, Hassan, additional, Sommet, Raphael, additional, Nallatamby, Jean-Christophe, additional, and Raja, P. Vigneshwara, additional

Published
2024
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9. Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Author

Cordier, Yvon, primary, Ngo, Thi Huong, additional, Comyn, Rémi, additional, Chenot, Sébastien, additional, Brault, Julien, additional, Nemoz, Maud, additional, Vennéguès, Philippe, additional, Damilano, Benjamin, additional, Frayssinet, Eric, additional, and Vézian, Stéphane, additional

Published
2024
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10. Petrological and geochemical characteristics of the Low- and High-Hf Nam Meng dioritoid, northwest Vietnam: Implication for the mantle partial melting, mixing, and magmatic differentiation

Author

Tran, Tuan-Anh, primary, Pham-Ngoc, Can, additional, Nguyen, Hoang, additional, Vu Hoang, Ly, additional, Ngo Thi, Huong, additional, Tran Quoc, Cong, additional, Pham Thi Phuong, Lien, additional, Tran Trong, Hoa, additional, Vuong Bui Thi, Sinh, additional, and Pham Thanh, Thuy, additional

Published
2024
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11. Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate.

Author

Elwaradi, Reda, Mehta, Jash, Ngo, Thi Huong, Nemoz, Maud, Bougerol, Catherine, Medjdoub, Farid, and Cordier, Yvon

Subjects
MODULATION-doped field-effect transistors, BREAKDOWN voltage, GALLIUM nitride, MOLECULAR beam epitaxy, ATOMIC force microscopy, MATERIALS analysis, ALUMINUM construction
Abstract

In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and electrical properties of the heterostructures have been studied. The material analysis involved high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. In a first series of HEMT structures grown with an aluminum content of 30% in the AlGaN barrier, the channel downscaling results in a reduction in the GaN strain relaxation rate but at the expense of degradation in the mean crystal quality and in the electron mobility with a noticeable increase in the sheet resistance. An opposite trend is noticed for the three-terminal breakdown voltage of transistors, so that a trade-off is obtained for a 50 nm width GaN channel HEMT, which exhibits a sheet resistance of 1700 Ω/sq. with transistors demonstrating three-terminal breakdown voltage up to 1400 V for 40 μm gate to drain spacing with static on resistance Ron = 32 mΩ cm2. On the other hand, a second series of HEMT structures with high aluminum content AlGaN barriers and sub-10 nm GaN channels have been grown perfectly strained with high sheet carrier densities allowing to preserve sheet resistances in the range of 880–1050 Ω/sq. [ABSTRACT FROM AUTHOR]

Published
2023
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12. Effects of Iodine Treatment on the Development of Eggs and Larvae of Rabbitfish (Siganus guttatus Bloch, 1787).

Author

Kieu Thi Huyen, Tran Vinh Phuong, Tran Nguyen Ngoc, Ngo Thi Huong Giang, Ho Ngoc Tram Anh, Nguyen Xuan Huy, and Nguyen Quang Linh

Subjects
SIGANIDAE, IODINE, FISH eggs, FISH larvae, DIETARY supplements
Abstract

Iodine is proven to be an effective disinfectant for fish eggs and is commonly used in a hatchery to improve hatching and survival rates. However, tolerance to iodine can vary in different fish species, and it is essential to determine the optimal concentration to ensure successful hatchery production. This study investigated the optimum concentration and exposure time to iodine during incubation to improve rabbitfish larvae's hatching and fertilization rate from 4/2022 -- 8/2022 in Thua Thien Hue, Vietnam. The study consisted of two experiments: Experiment 1 focused on different iodine concentrations: 0 ppm (C1), 50 ppm (C2), 100 ppm (C3), and 150 ppm (C4). Experiment 2 explored three exposure times: 10 minutes (T1), 20 minutes (T2), and 30 minutes (T3) to increase the fertilization, hatching, and survival rates at five days post-hatching. Data were compiled, analyzed, and compared by ANOVA using SPSS ver. 22.0. The results showed that 100 ppm iodine concentration at 20 minutes of exposure resulted in the optimum hatching, fertilization, and survival rates of S. guttatus during artificial reproduction. In the future, integrated solutions in the use of iodine solution for egg treatment and natural food supplementation at the larval stage should be recommended to improve the efficiency in artificial hatchery production of Rabbitfish. [ABSTRACT FROM AUTHOR]

Published
2024
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14. Effects of protein levels of commercial diets on the growth performance and survival rate of rabbitfish (Siganus guttatus) at the nursing stage

Author

Tran Vinh Phuong, Nguyen Anh Tuan, Nguyen Duy Thuan, Ngo Thi Huong Giang, Tran Nguyen Ngoc, Nguyen Duy Quynh Tram, and Nguyen Quang Linh

Subjects
General Veterinary, General Agricultural and Biological Sciences, General Biochemistry, Genetics and Molecular Biology
Abstract

This study aimed to determine the effect of a commercial diet's protein level on the fry-to-fingerling stage. Thirty days-old fries having the initial length and weight of 18.25 ± 0.15 mm fish-1 and 0.036 ± 0.50 g fish-1 respectively have been used in this study. Diet having three protein levels i.e. 30% (trial 1 as control), 35% (trial 2), 40% (trial 3), and 45% (trial 4), respectively, have been used to evaluate the effect of protein, and each trial has been repeated three times. During the study, stocking density was allocated to 1000 fish per composite tank with a volume of 1 m3. After 30 days of rearing, the weight of fingerlings in trial 1 reached up to 1.50 ± 0.02 g fish-1 and it was recorded as 1.52 ± 0.01g for trial 2, these two were lower than that of trials 3 and 4, where fingerling weight was reported 1.69 ± 0.01 and 1.58g fish-1 respectively and obtained the best weight compared to others. The length of fingerlings at the end of the experimental period was also changed in different trials and it was recorded 47.12; 46.92; 50.97; and 48.89 mm fish-1 for trail 1, 2, 3, and 4 respectively, among the tested combinations lower fingerlings length was recorded for trial 2 (35% CP), but it is not significantly different for trial 1 and 2 and a significant difference (P < 0.05) was reported for trail 2, 3, and 4. The survival rate of fingerlings ranged from 67.27 to 72.33%. Meanwhile, the herd distribution coefficient variation (CVW) in the treatment using 40% protein (trial 3) was the highest at 72.33% (p < 0.05). The results of the study can be concluded that the level of protein has a significant effect on the various growth parameters of fingerlings.

Published
2022

15. Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Author

N’Dohi, Atse Julien Eric, primary, Sonneville, Camille, additional, Saidi, Soufiane, additional, Ngo, Thi Huong, additional, De Mierry, Philippe, additional, Frayssinet, Eric, additional, Cordier, Yvon, additional, Phung, Luong Viet, additional, Morancho, Frédéric, additional, Maher, Hassan, additional, and Planson, Dominique, additional

Published
2023
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16. Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

Author

Gujrati, Rajat, primary, Srivastava, Ashutosh, additional, Vuong, Phuong, additional, Ottapilakkal, Vishnu, additional, Sama, Yves N., additional, Ngo, Thi Huong, additional, Moudakir, Tarik, additional, Patriarche, Gilles, additional, Gautier, Simon, additional, Voss, Paul L., additional, Sundaram, Suresh, additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2023
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17. Raskolnikov's confession in 'Crime and Punishment': a buddhist perspective

Author

Huong, Luong Thi Thu and Ngo Thi Huong

Abstract

This article is devoted to the analysis of the confession of Raskolnikov, the main character of F.M. Dostoevsky's novel "Crime and Punishment", from the point of view of Buddhism. It is determined that Raskolnikov in the novel is depicted as an intelligent, sympathetic, well-educated, compassionate young man with a promising future, but he commits murder. The main purpose of this study is to review Raskolnikov's mental state before and after the crime in order to assess the contrast between his seemingly happy life and his heinous crime. The second intention is to demonstrate that Sonya is Raskolnikov's karma, in her role as a prostitute who voluntarily followed him to prison in order to get to the essence of his personality, since she is an external projection of the killer's karma that needs to be led and punished.

Published
2022
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19. Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode.

Author

N'Dohi, Atse Julien Eric, Sonneville, Camille, Saidi, Soufiane, Ngo, Thi Huong, De Mierry, Philippe, Frayssinet, Eric, Cordier, Yvon, Phung, Luong Viet, Morancho, Frédéric, Maher, Hassan, and Planson, Dominique

Subjects
SCHOTTKY barrier diodes, GALLIUM nitride, SPECTROMETRY, STRAY currents, BREAKDOWN voltage, DIODES, CATHODOLUMINESCENCE
Abstract

In this work, the physical and the electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current-voltage (I-V) measurements were performed to better understand the effects of physical parameters, for example structural defects and doping level inhomogeneity, on the diode electrical performances. Evidence of dislocations in the diode epilayer was spotted thanks to the CL measurements. Then, using 2D mappings of the E 2 h and A1 (LO) Raman modes, dislocations and other peculiar structural defects were observed. The I-V measurements of the diodes revealed a significant increase in the leakage current with applied reverse bias up to 200 V. The combination of physical and electrical characterization methods indicated that the electrical leakage in the reverse biased diodes seems more correlated with short range non-uniformities of the effective doping than with strain fluctuation induced by dislocations. [ABSTRACT FROM AUTHOR]

Published
2023
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20. Multiphysics Characterizations of Vertical GaN Schottky Diodes

Author

Eric N’dohi, Atse Julien, Sonneville, Camille, Saidi, Soufiane, Ngo, Thi Huong, de Mierry, P., Frayssinet, Eric, Cordier, Yvon, Phung, Luong Viêt, Morancho, Frédéric, Isoird, Karine, Tasselli, Josiane, Maher, Hassan, Planson, Dominique, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Cathodo-luminescence (CL), [SPI.NRJ]Engineering Sciences [physics]/Electric power, GaN Schottky diodes, Current-voltage I (V), micro-Raman spectroscopy
Abstract

International audience; In this work, measurements from cathodo-luminescence (CL), micro-Raman spectroscopy and currentvoltage I(V) have been coupled to assess the effects of physical parameters such as threading dislocations and effective doping level homogeneity on the electrical performances of vertical GaN Schottky diodes.

Published
2022

21. Multiphysics Characterizations of Vertical GaN Schottky Diodes

Author

N'Dohi, Atse Julien Eric, primary, Sonneville, Camille, additional, Saidi, Soufiane, additional, Ngo, Thi Huong, additional, De Mierry, Philippe, additional, Frayssinet, Eric, additional, Cordier, Yvon, additional, Phung, Luong Viet, additional, Morancho, Frederic, additional, Isoird, Karine, additional, Tasselli, Josiane, additional, Maher, Hassan, additional, and Planson, Dominique, additional

Published
2022
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23. MATERIAL-ECONOMIC FACTORS OF THE KÝ YÊN FESTIVAL AT VĨNH BÌNH COMMUNAL TEMPLE, TIÊN GIANG, VIETNAM.

Author

Nguyen Ngoc Tho and Ngo Thi Huong

Abstract

The economic reform (Đổi mới) that began in 1986 and the current strong development of the market economy have left many marks on almost all aspects of social life in Vietnam, including community beliefs and public ritual space. Material-economic factors penetrate into public ritual spaces (such as a communal temple) and become one of the important driving forces for ritual spaces in some places. Moreover, material-economic values have become important resources to promote the development of rural public. This study of a festival held at the Vĩnh Bình Communal Temple (Tiền Giang province) describes the trend of materialeconomic factors in rural festivals and identifies a new phase of development and a new experience of a local communal temple festival. The material-economic factors are the intrinsic factors of the festival. If used properly, they can enhance the festival atmosphere, promote community cohesion, and enhance the atmosphere of the festival. This case study shows that material-economic factors can be appropriately used as the catalysts for improving the effectiveness of communal festivals and they play a significant role in helping to protect and develop communal institutions in Vietnam today. [ABSTRACT FROM AUTHOR]

Published
2023
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24. Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications

Author

Eric N’Dohi, Atse Julien, primary, Sonneville, Camille, additional, Phung, Luong Viet, additional, Ngo, Thi Huong, additional, De Mierry, Philippe, additional, Frayssinet, Eric, additional, Maher, Hassan, additional, Tasselli, Josiane, additional, Isoird, Karine, additional, Morancho, Frédéric, additional, Cordier, Yvon, additional, and Planson, Dominique, additional

Published
2022
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26. MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES

Author

Eric N’dohi, Atse Julien, Sonneville, Camille, Saidi, Soufiane, Ngo, Thi Huong, de Mierry, P., Frayssinet, Éric, Cordier, Yvon, Phung, Luong Viêt, Morancho, Frédéric, Planson, Dominique, Maher, Hassan, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and Sonneville, Camille

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract

International audience

Published
2021

27. Compact automatic solution to detect and warn abandoned children on school buses

Author

Van Binh Nguyen and Ngo Thi Huong

Subjects
Structure (mathematical logic), Identification (information), Computer science, Real-time computing, Task analysis, Embedded processing, Convolutional neural network, Electronic mail
Abstract

This paper proposes a compact automatic system, which could be installed easily on vehicles, to detect and send warnings if pupils are accidentally left on school buses. The detection and identification method is mainly based on MobileNets - the new structure of convolutional neural networks. The information is then fed to an embedded processing module and alarms are provided to relevant people via sound, text messages, phone-calls and/or emails in order to avoid unfortunate consequences. The device is tested on a real bus to show the efficiency and safety with various situations.

Published
2021

28. EVALUATION OF ROOT CANAL OBTURATION RESULTS WITH THE CANAL SHAPING SYSTEM WAVE ONE AND GUTTA THERMAFIL

Author

Ta Anh Cuong, Ngo Thi Huong Lan, Steven Wijaya, and Ta Thu Anh

Subjects
Root Canal Obturation, Materials science, business.industry, Gutta, Dentistry, business
Abstract

Objective: To evaluate the results of root canal obturation with Wave One (WO) canal shaping system and Gutta Thermafil obturation system. Design: Nonrandomized prospective experimental trial between December 2020 and March 2021. Setting: Central Military Hospital 108. Subject: 30 lower incisors extracted teeth without stem rupture, without root damage such as fracture, stray, fissure. Results: The number of slices with the biggest gaps accounting for 16.7%. The number of slices with the smallest gaps accounting for 10%. The number of slices with gaps over the total slices accounted for 14.4%. The void area in the apical slice was 1,413 ± 519.5 µm2 and the largest void area was 38,654.2 ± 3,939.8 µm2. Conclusion: Thermafil Gutta Percha has a good fit to the canal wall, which can seal the canal more easily and accurately.

Published
2021

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