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Optical vortex (OV) beams are ideal carriers for high-capacity optical communication, and long-wave infrared (LWIR) is the ideal wavelength band for long-range optical communication. Here, we propose a method for the achromatic generation of focused optical vortex (FOV) beams with arbitrary homogenous polarization states in the LWIR using a single all-germanium metasurface. The chromatic aberration and polarization sensitivity are eliminated by superimposing a polarization-insensitive geometric phase and a dispersion-engineered dynamic phase. The method is validated using two broadband FOV generators with the same diameter and focal length but different topological charges. The results indicate that the FOV generators are broadband achromatic and polarization insensitive. The proposed method may pave the way for chip-scale optical communication devices.

A bandpass filter integrated metalens based on electromagnetically induced transparency (EIT) for long-wavelength infrared (LWIR) imaging is designed in this paper. The bandwidth of the metalens, which is a diffractive optical element, decreases significantly with the increase of the aperture size to a fixed f-number, which leads to the decline of imaging performance. The same material composition and preparation process of the metalens and the EIT metasurface in the long-wavelength infrared make it feasible that the abilities of focusing imaging and filtering are integrated into a metasurface device. With the purpose of validating the feasibility of this design method, we have designed a 300-μm-diameter integrated metalens whose f-number is 0.8 and the simulation was carried out. The introduction of EIT metasurface does not affect the focusing near the diffraction limit at the target wavelength, and greatly reduces the influence of stray light caused by non-target wavelength incident light. This bandpass filter integrated metalens design method may have a great potential in the field of LWIR compact optical systems.

In order to meet the requirements for multiband communication, a dual-band passband frequency selective surface (FSS) with low-profile and high selectivity at its higher passband is proposed in this paper. The proposed FSS is a three-layer structure. An arc-cross patch (ACP) and four quarter-circular patches (QCP) are introduced on the outer layers to produce two transmission nulls of the higher passband, which result in high selectivity of higher passband. The inductively complementary structure on the middle layer is introduced to manipulate the coupling between layers which contribute to the low-profile and angular stability. The segmental study method is used to establish the equivalent circuit model (ECM) and analyze its mechanism. The proposed dual-band FSS, whose high selectivity was verified by experiment, is low-profile and shows good polarization insensitivity and angular stability. A feasible FSS design solution is provided for dual-band communication. [ABSTRACT FROM AUTHOR]