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Accurately detecting human trafficking is particularly challenging due to its covert nature, difficulty in distinguishing trafficking from non-trafficking exploitative conditions, and varying operational definitions. Typically, detecting human trafficking requires resource-intensive efforts from resource-constrained anti-trafficking stakeholders. Such measures may need personnel training or machine learning-based identification technologies that suffer from detection errors. Repeated usage of such measures risks biasing detection efforts and reducing detection effectiveness. Such problems raise the question: "How should imperfect detection resources be allocated to most effectively identify human trafficking?" As an answer, we construct a class of resource allocation models that considers various optimal allocation scenarios. These scenarios range from optimal location selection for monitoring to optimal allocation of a finite set of imperfect resources, given error rates. We illustrate the applicability of these models across both human and technology-facilitated detection contexts at the India–Nepal border and in the global seafood industry. Insights from our models help inform operational strategies for allocating limited anti-human trafficking resources in a way that effectively preserves human rights and dignity. [ABSTRACT FROM AUTHOR]

The total ionizing dose response of hybrid FinFET with a modified gate stack (GS) is investigated and examined for the various ultra-thin body (UTB) layers and combination of gate oxide stacks. Incorporation of UTB layer to the conventional FinFET enhances the mechanical strength of the device. While being irradiated, conventional FinFET with UTB layer reduces the accumulation of trap charges to a certain level. Further, reduction of these charges can be achieved by using a high-k dielectric with UTB layer. This reduction in interface trap charges enhance the OFF-state performance while maintaines the positive threshold voltage of the device. The combination of UTB and GS in SOI-FinFET renders it more reliable and tolerant to ionizing dose. • Total ionizing dose response of hybrid FinFET with a modified gate stack (GS) is investigated. • Incorporation of UTB layer to the conventional FinFET enhances the mechanical strength of the device. • Under radiation FinFET with UTB layer reduces the accumulation of trap charges. • Reduction in interface trap charges enhances the OFF state performance. • The combination of UTB and GS in SOI-FinFET renders it more reliable and tolerant to ionizing dose. [ABSTRACT FROM AUTHOR]

A dynamic slicing algorithm is proposed in this paper along with its implementation which is dynamic for concurrent Component-oriented programs carrying multiple threads. As a part of representing the concurrent COP (CCOP) effectively, an intermediate graph is developed called Concurrent Component Dependency Graph (CCmDG). The system dependence graph (SDG) for individual components and interfaces are integrated to represent the above intermediate graph. It also consists of some new dependence edges which have been triggered for connecting the individual dependence graph of each component with the interface. Based on the graph created for the CCOP, a dynamic slicing algorithm is proposed, which sets the resultant by making the executed nodes marked during run time in Concurrent Components Dynamic Slicing (CCmDS) appropriately. For checking the competence of our algorithm, five case studies have been considered and also compared with an existing technique. From the study, we found that our algorithm results in smaller and precise size slice compared to the existing algorithm in less time. [ABSTRACT FROM AUTHOR]

Zinc oxide nanoparticle (ZnO NP) is an emerging soil pollutant of industrial origin. The unique physicochemical properties of ZnO NP viz. the bioavailability and subsequent ecotoxicological effects on organisms have made it an ecological concern. Lampito mauritii (Kinberg, 1866) is a common anecic earthworm and is considered as a keystone species of soil ecosystems in India. They are continuously exposed to various environmental toxins during their feeding and other activities. The current study aimed to estimate the immunotoxicological effects of ZnO NP in the coelomocytes, the chief immunoeffector cells of L. mauritii. The results of the study indicated decreased total count, phagocytic activity, antioxidative, and detoxifying potential of the coelomocytes in L. mauritii at 7 and 14 days of exposure. ZnO NP exposure resulted in the generation of oxidative molecules, lipid peroxidation, and DNA damage within coelomocytes. The higher degree of cytotoxicity on ZnO NP exposure was suggestive of immunocompromisation in L. mauritii. An integrated biomarker response (IBR) guided methodology was also utilized in estimating the comprehensive effects of ZnO NP on the health of L. mauritii. The present study would provide useful information on the ZnO NP induced chemical stress in L. mauritii , with the selected endpoints having the potential to function as markers for ZnO NP toxicity. [Display omitted] • ZnO NP shifted density, oxidative and detoxifying status of coelomocytes. • High ROS generation, lipid peroxidation and DNA damage by ZnO NP • ZnO NP inhibited phagocytosis of latex beads. • IBR index indicated higher ZnO NP toxicity in long span exposure. [ABSTRACT FROM AUTHOR]

The effect total ionizing dose on a linear gate workfunction modulated SOI P-FinFET is analyzed and compared with the bulk P-FinFET. This technique improves the device electrostatic integrity for pre and post radiation condition. A decade improvement in I OFF is obtained for both the bulk and proposed devices. Moreover, both the SOI devices offer 35% and 29% less subthreshold swing for pre-rad condition. After irradiation trap charges are accumulated in oxide and semiconductor/insulator interfaces, which makes threshold more negative. The linear gate workfunction modulation gives more V th for both devices. At high radiation of 2000 krad dose proposed SOI device shows 39% more threshold voltage as compared to LGWM bulk P-FinFET. The maximum V th shift is observed in single workfunction bulk P-FinFET. Based on the simulation results, the proposed SOI P-FinFET is proved to be better TID tolerant and reliable. [ABSTRACT FROM AUTHOR]

The total ionizing dose (TID) response of SOI-FinFET with linear gate workfunction modulation is presented and evaluated. The gate metal workfunction is linearly modulated from source to drain to maintain the electrostatic integrity of the device. At the higher radiation dose (2000 krad), the proposed device has shown reduced Off-current by 2-decade leads to improvement in current switching ratio. Moreover, the proposed device offers 9% and 3% improvement in subthreshold swing before and after the radiation, respectively. During irradiation the trap charges are found in the BOX layer and SiO 2 /Si interface. These charges contributed towards shifting of threshold voltage (V th). The linear workfunction modulation shows a 73% more V th as compared to single workfunction FinFET for radiation of 2000 krad dose. As per simulation results, the proposed device is reliable and capable to sustain in the radiation environment. • Total ionizing dose response of SOI-FinFET with linear gate workfunction modulation is studied. • The gate metal workfunction is linearly modulated from source to drain to maintain the electrostatic integrity of the device. • Fin geometry of the proposed model is optimized to get higher current switching ratio. • At the higher radiation dose (2000 krad), the proposed device shows reduced Off-current by 2 decades. • The linear workfunction modulation shows a 50% minimal shift in V th. [ABSTRACT FROM AUTHOR]