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In this policy brief, Antonia Hmaidi, Senior Analyst in the Science, Technology and Innovation Program at MERICS, analyzes Huawei, a company that is emerging as the leader of China’s national team in semiconductors, dominating chip manufacturing and seeking to integrate the country’s entire supply chain. Its ambitions stem from both its placement on the U.S. Entity List and strong government support at the national and local level. Internationally, Huawei is coy about these ambitions, hiding its supply chain involvement and often operating under a different company’s name. Meanwhile, Huawei’s experience is also encouraging other Chinese technology companies to support China’s quest for chip self-sufficiency, developing new hardware and software for that purpose. The clandestine nature of Huawei’s involvement—it is not known who serves what role in semiconductor production—makes it more difficult for Western companies and governments to assess China’s progress in technology, vet potential partners and customers, and conduct risk assessments.

Ni 1 − x TixMnSb polycrystalline alloys in the range 0 ≤ x ≤ 0. 2 0 were synthesized employing the standard solid-phase synthesis method. The crystal, magnetic, as well as electrical properties of the alloys were investigated using neutron powder diffraction and magneto-resistance measurements. The results reveal that the substitution of Ti for Ni within the temperature range of 2.5–300 K does not induce alterations in the crystal and magnetic structures of NiMnSb. The ordered Ni magnetic moment approaches zero. The study of the electrical transport properties of the Ni 1 − x TixMnSb alloys, where 0 ≤ x ≤ 0. 2 0 , has demonstrated a half-metallic state at low temperatures and metallic conductivity for temperatures exceeding 160 K. A semiconductor state manifests at titanium concentrations of x = 0.2 and was observed at temperatures below 21 K. The obtained experimental results are elucidated through first-principles theoretical calculations. [ABSTRACT FROM AUTHOR]

This study investigates the contemporary thermoelasticity theories in a photothermal semiconducting medium with voids influenced by the electromagnetic field. Boundary conditions of the phenomenon were based on the equations that regulate it concerning the stresses, carrier density, change in volume fraction field and temperature on the surface space. The equations were solved in normal mode technique, and the results are displayed by graphs. A comparison has been made with the findings of the literature when neglecting the new external parameters. The findings show that the presence or absence of electromagnetic field and carrier density significantly impacts on the phenomenon. From the results obtained, it is clear that the effects of electromagnetic field, carrier density, volume fraction and thermal relaxation times are very pronounced and applicable in diverse fields including geophysics, astronomy, engineering, biology, etc. [ABSTRACT FROM AUTHOR]

Cu2SnS3 (CTS) is expected to be an absorber material for next-generation solar cells because it is composed of nontoxic, low-cost elements and has an absorption coefficient of >104 cm−1. In this study, the effects of sulfurization in tin sulfide (Sn x S y) and S mixed vapors on various properties of CTS were investigated by using a 3-zone tube furnace to suppress carrier recombination at the grain boundaries and control the composition of the CTS. The CTS deposited via sulfurization in S vapor only (1-zone CTS) contained different monoclinic and tetragonal CTS structures. The grain size of the CTS thin films deposited via sulfurization in Sn x S y and S mixed vapors was not increased. On the other hand, crystal structure analysis revealed that the CTS had grown to single-phase monoclinic CTS. The results suggest that precipitation in Sn x S y and S mixed vapors contributes to the growth of monoclinic CTS with suitable power-generation characteristics. This finding is important for realizing high-efficiency CTS-based solar cells. [ABSTRACT FROM AUTHOR]

Understanding the electronic structures of gate oxides in Si-based devices is significant for improving device performance. We investigate the electronic properties of the oxygen vacancy defects in β -quartz SiO2/Si interface structure using first-principles calculations. The results indicate that the constructed (SiO2)4/(Si)4 structure is an indirect-gap semiconductor, with its band edges contributed by Si side and a large band-edge energy difference ( > 1.780 eV). Our study reveals that the presence of oxygen vacancy defects reduces the band gap, and V O 1 is transformed from indirect into direct band gap. The Si dangling bonds in V O 1 cause charge localization around the O vacancy, while the formation of Si–Si bonds in V O 2 and V O 3 lead to electron delocalization. In the calculation of defect formation energies, we find that V O 1 maintains the lowest formation energy across different states, making it more likely to form and structurally stable. Compared to O-rich environments, the formation energy in O-poor environments is overall reduced by approximately 4.5 eV, indicating that oxygen vacancy defects are more likely to form and be controlled under O-poor conditions. Our study emphasizes the importance of interface structure and defect characteristics in semiconductor research, providing insights for the development of Si-based devices. [ABSTRACT FROM AUTHOR]

This study introduces a generalized photothermal model to analyze the coupled thermo-hydromechanical behavior of a poroelastic, nonlocal semiconductor medium subjected to laser excitation. The medium is modeled as a saturated, dynamic, poroelastic half-space under time-harmonic loads, including thermal and mechanical forces and plasma electron distribution induced by laser pulses. A novel framework that integrates photo-thermoelasticity with hydrodynamic and poroelastic effects, capturing the nonlocal interactions at the nanoscale. At first, we subjected this medium to time-harmonic loads comprising thermal and normal loads and a distribution of plasma electrons applied with heating laser pulses. Afterward, we compared the photo-thermoelastic dynamic models to the coupled thermo-hydromechanical ones. The resulting nondimensional coupled equations were solved using two-dimensional normal mode analysis. The resulting nondimensional coupled equations were solved using two-dimensional normal mode analysis. The study examined the effects of nondimensional displacement, mechanical stress, excess pore water pressure, carrier concentration (density), and temperature distribution on the poroelastic half-space medium. Graphical representations were produced to highlight these effects based on specific parameters. [ABSTRACT FROM AUTHOR]

Herein, CdTe/MnS core/shell nanoparticles dispersed in an aqueous solution have been synthesized. The formation of MnS semiconductor shell occurs by spontaneous self‐assembly. This process is activated by thermal hydrolysis that removes the excess of thiol and releases S2− ions. In this process, Mn2+ ions on the surface of the CdTe nanoparticles bind to S2− ions to produce a fine semiconducting layer of MnS. Measurements of Raman spectroscopy, optical absorption, and electrochemical measurements are performed. The Raman spectrum shows CdTe characteristic bands at 141 and 163 cm−1. Bands at 221 and 444 cm−1 are associated with the MnS structure. Cyclic voltammetry and differential pulse voltammetry are used to estimate the electrochemical gap at ≈2.47 eV. Absorption optical measurements show tree absorption bands. A broad band between 460 and 520 nm is associated with the first transition in CdTe nanoparticle. The absorption spectrum reveals an optical gap in the range of 2.41–2.33 eV for all the refluxed samples. These values are consistent with those obtained with the electrochemical measurements. The results evidence the formation of a core–shell semiconducting nanostructure made of CdTe nanoparticles coated with a spontaneously self‐assembled thin layer of MnS nanoparticles. [ABSTRACT FROM AUTHOR]

The United States has tightened its technical embargo against China since the Sino-US rivalry began in the mid-2010s, especially in the semiconductor sector. It also has repercussions for China's relations with US allies such as South Korea (or the Republic of Korea, ROK). As China's technical growth is securitized, Sino-ROK collaboration in semiconductor technology becomes politicized, according to a securitization-politicization nexus derived from securitization theory. Under the pressure from Washington, even Korean semiconductor businesses may be forced to 'choose sides'. However, Seoul's pragmatic approach to Beijing prevents the politicization of Sino-ROK technological ties. While demanding security guarantees from Washington, Seoul is unwilling to enhance ties with the US at the price of those with China. Among three scenarios figured out in this paper, South Korea is likely to consolidate its ties with China in semiconductor industry in some form of 'smart' collaboration Ceteris paribus, and this is also in the interest of Beijing. [ABSTRACT FROM AUTHOR]

A novel approach for modifying zinc stannate nanomaterials involves using a bio-extract derived from the leaves of Hibiscus rosa-sinensis. Ag nanomaterial and biomolecule sensitization was conducted in a single pot. The composite materials of Ag and biomolecules were characterized using powder X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy analysis to determine their structural aspects. Based on the PXRD results, it was determined that the composites exhibit a face-centered cubic structure. The observed frequencies of C − H and Sn − O stretching in the FT-IR spectra indicate the existence of biomolecules within the composite material. Furthermore, the X-ray photoelectron spectroscopy findings validate the coordination of zinc and tin within the zinc stannate compound with biomolecules while indicating silver's presence on the surface. Scanning electron microscopy and transmission electron microscopy techniques have revealed the material's porous characteristics and reduction in size of the zinc stannate particles. In addition, the results demonstrated the spherical morphology of the silver particles that have undergone doping. Surface agglomeration and optical characteristics were investigated using UV–Vis spectroscopy. The observed phenomenon exhibits pronounced particle agglomeration resulting from biomolecules on the surface. In addition, the emergence of an additional absorption band at approximately 453 nm can be attributed to silver's surface plasmon resonance effect. The obtained J–V curve for all samples demonstrates the observed enhancements, resulting from incorporating Ag and biomolecules. The enhancements observed in the simulation results were further confirmed through the validation process, which demonstrated the extended absorption and surface plasmon resonance effect. [ABSTRACT FROM AUTHOR]

This study presents a comprehensive approach to vibrational analysis in a size-dependent, orthotropic thermo-piezo-photo-electric semiconductor half-space under Moore–Gibson–Thompson (MGT) photo-thermoelasticity theory with memory-dependent derivatives. Following Eringen's nonlocal elasticity theory, the governing equations for the considered material are derived. The normal mode technique is applied to investigate the photothermal excitation process. Focusing on the interface adjacent to the vacuum, the study considers plasma, thermal, and mechanical stress boundary conditions to determine fundamental physical quantities. Through a detailed exploration, this research examines the impact of various thermo-piezo-photo-electric models, time, nonlocal parameters, and spatial coordinates on different physical quantities. The effects are meticulously analyzed and visually represented through graphical illustrations. While the literature survey reveals numerous studies on vibrational analysis in thermo-piezo-photo-electric semiconductor mediums under different thermoelasticity theories, to the best of the authors' knowledge, no research emphasizing vibrational analysis in a size-dependent thermo-piezo-photo-electric semiconductor medium has been conducted. Moreover, the effect of memory-dependent MGT photo-thermoelasticity theory on a size-dependent thermo-piezo-photo-electric semiconductor half-space has not been illuminated until now, significantly defining the novelty of the conducted research. [ABSTRACT FROM AUTHOR]

Coordination polymers (CPs) are promising for direct X‐ray detection and imaging owing to higher designability and outstanding stability, however, it remains a challenge to achieve highly X‐ray detection performance, particularly both high sensitivity and low detection limit at the same operating voltage. Herein, we construct a new conjugated CP {[Co(BPTTz)(DIPA)] ⋅ DMA}n (1, BPTTz=2,5‐bis(pyridine‐4‐yl)thiazolo[5,4‐d]thiazole, H2DIPA=2,5‐diiodoterephthalic acid, DMA=N, N’‐dimethylacetamide), with multi‐channel charge transfer by regulating the linker mediated electronic‐state, which reduces carrier losses resulting from recombination or quenching, enhances the efficiency of charge separation and transfer, thus further optimizes X‐ray detection performance. The semiconductor prepared based on this strategy achieves record values including the highest mobility‐lifetime product (μτ, 8.05×10−3 cm2 V−1) and the lowest detectable X‐ray dose rate (128 nGyair S−1, 35 V) among CP‐based direct radiation detectors, as well as a high sensitivity (172 μC Gyair−1 cm−2, 35 V) at the same operating voltage. This detector shows excellent long‐time air stability under ambient conditions for over three months and operational stability. These findings demonstrate a rational structural design method to enhance the photoelectronic efficiency and stability of semiconductive CPs. [ABSTRACT FROM AUTHOR]

This manuscript examines the effects of memory-dependent and fractional-order derivatives on a novel generalized piezo-thermo-elastic semiconductor model. The medium is homogenous and orthotropic, subjected to photo-thermal excitation. The governing equations include fractional-order parameters, relaxation time, time delay, and kernel function tailored to specific problem requirements. Normal mode method use to solve the equations, yielding analytical expressions. Graphical representations show physical field distribution across various fractional-order parameters, kernel functions, time delay, and frequency values. This study has the potential to advance precise model development and future simulations. [ABSTRACT FROM AUTHOR]

Two rare earth isonicotinic acid compounds [Y(HIA)2(H2O)4(NO3)](2NO3) ((1); HIA = isonicotinic acid) and [LaHg3Cl8(HIA)4]nnCl (2) were reported. Compound one features an isolated (0-D) structure, while compound two has a two-dimensional (2-D) structure. The rare earth ions are coordinated by eight oxygen atoms to display a square antiprismatic REO8 geometry. Compound one shows blue photoluminescence and it has CIE chromaticity coordinates of 0.2332 and 0.3104. The CCT of compound 1 is 13755 K. Compound two exhibits green photoluminescence and it has CIE chromaticity coordinates of 0.3663 and 0.6184. The CCT is 4997 K. Their band gaps are 2.86 and 3.12 eV. [ABSTRACT FROM AUTHOR]

The recent claimed room-temperature superconductivity in Cu-doped lead apatite at ambient pressure is under debate. To identify its physical origin, we conducted a detailed analysis of the crystal structure, band structure, lattice dynamics and magnetic properties of the parent Pb10(PO4)6O compound and the two different phases of Pb9Cu(PO4)6O (LK-99) compound. Our results show that the parent Pb10(PO4)6O compound is an indirect band gap semiconductor, where Cu doping at the 4f site of Pb leads to a semiconducting to half-metallic transition. Two half-filled flat bands spanning the Fermi energy levels are present in the 4f phase of LK-99, which are mainly formed by hybridization of the d orbitals of Cu with the 2p orbitals of O. In addition, 6h phase of LK-99 always has spin polarization at the bottom of the conduction band and at the top of the valence band, making the material a magnetic semiconductor. Our theoretical research reveals recent experimental reports on the different transport properties of LK-99. [ABSTRACT FROM AUTHOR]

The future of next‐generation electronics relies on low‐cost organic semiconductors that are tailored to simultaneously provide all requisite optoelectronic properties, focusing greatly on ambipolar charge‐transport and solution processability. In this regard, room‐temperature discotic liquid crystals (DLCs) are potential candidates, where quasi‐1D self‐assembly affords a charge‐transport channel along their columnar axis. This work shows a molecular design strategy by utilizing anthraquinone as the primary motif, surrounded by ester functionalized tri‐alkoxy phenyl units to develop room‐temperature DLCs (1.1–1.3). Here, the polar ester functionality stabilizes the columnar mesophase over a wide range through the involvement of dipole‐dipole interaction along with the π–π stacking. Throughout the entire mesophase transition, reported compounds 1.1–1.3 exhibit a highly ordered 2D columnar oblique (Colob) self‐assembly. Space charge limited current (SCLC) experiments reveal balanced ambipolar charge transport, with the maximum hole and electron mobilities of 5.04 and 4.93 cm2 V−1 s−1, respectively. From the conoscopic results, their propensity to align in a highly homeotropic fashion is demonstrated. It is further justified by the azimuthal plot corresponding to the (11) peak of grazing incidence small angle X‐ray scattering (GISAXS), denoting the crucial role of the design and alignment for efficient movement of charge carriers in the material. [ABSTRACT FROM AUTHOR]

The current study deals with reflected waves through a porous medium with viscoelastic properties. The considered continuum media is a semiconductor with elastic and thermal properties which varies exponentially along the depth of the medium. The thermal disturbance caused by elastic propagation is then encountered by the refined phase-lag heat conduction model. The scattering relation for the coupled waves has been computed. It is observed that the functionally graded, voids and non-local parameters reduce the amplitude ratios of reflected waves propagating through the medium. The solution in the form of amplitude ratios for reflected waves has been obtained analytically and represented graphically for a particular medium. [ABSTRACT FROM AUTHOR]

Mesoporous Titanium dioxide (TiO2) sphere, nanosheet and nanoparticle were synthesized by a simple wet chemical method using Trichloroaniline (TCA) as a capping agent. The presence of a lone pair of electrons in the TCA is used to modify the TiO2 structure when it is added with different amounts of ratios. The as-synthesized TiO2 nanostructures were characterized by powder X-ray diffraction, Raman spectroscopy (FT-Raman), ultraviolet–visible spectroscopy, Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy and transmission electron microscopy. The anatase phase of TiO2 was confirmed by Powder X-ray diffraction and Raman spectroscopy. The particle size of TCA-capped TiO2 was reduced when compared with the sample without TCA capping. FTIR results demonstrated the TiO2 nanoparticles were capped by the TCA molecule. The impact of different TiO2 nanostructure morphology for DSSCs was investigated. The photoanode cells were fabricated with mesoporous spheres and mixed morphology of TiO2 nanoparticle and nanosheet. Their optimal efficiencies were found to be 5.537 and 1.539%, respectively. Mesoporous spheres coated photoanode cells reached the maximum efficiency when compared to that of the mixed morphology of nanosheet with nanoparticle-coated photoanode. The enhanced performance of mesoporous spheres coated photoanode cells is due to the anatase phase of TiO2 with high crystallinity and interconnected mesoporous network. [ABSTRACT FROM AUTHOR]

In this study, the Destruction or Removal Efficiency (DRE) of 10 types of F-gases used in the semiconductor and display industries in South Korea was measured. These industries use a large volume of F-gases with high Global Warming Potential (GWP), significantly contributing to national greenhouse gas emissions. Therefore, accurately calculating the greenhouse gas emissions from these industries and establishing appropriate mitigation plans is crucial. The current IPCC guidelines provide parameters for estimating greenhouse gas emissions for each gas, including DRE values. However, they present only a single coefficient for each gas, without considering the diverse abatement technologies that are commercially applied in practice. As a result, there is a potential for overestimating South Korea's national greenhouse gas emissions, as these guidelines do not reflect the advanced abatement technologies used in each country's semiconductor and display industries. To address this, the DREs of Combustion-type and Plasma-type abatement technologies, which are widely used in South Korea, were measured based on the Korean KS guidelines, developed from the U.S. EPA's reduction efficiency measurement guidelines. The results showed that Plasma-type technologies, which are generally known to have better reduction efficiency, achieved higher DRE values compared with Combustion-type technologies. Furthermore, statistical analysis was conducted using SPSS 26 to assess whether it is significant to develop separate DRE values for different technologies. The analysis confirmed that developing distinct DREs for each technology is statistically significant. The findings of this study provide practical guidance for selecting optimal abatement technologies in South Korea's semiconductor and display industries and serve as fundamental data for contributing to the achievement of sustainable carbon neutrality goals through more accurate greenhouse gas inventories in countries involved in semiconductor and display production. [ABSTRACT FROM AUTHOR]

High-purity quartz (HPQ) is the only naturally occurring and economically viable source for the production of silicon. Silicon is a critical mineral, and a key component in modern technologies such as semiconductors and photovoltaic cells. Critical minerals support the move towards a greater reliance on electrification, renewable energy sources and economic security. The global transition to net zero carbon emissions means there is a growing need for new discoveries of HPQ to supply the silicon production chain. HPQ deposits are identified in a multitude of geological settings, including pegmatites, hydrothermal veins, sedimentary accumulations and quartzite; however, deposits of sufficient volume and quality are rare. Quartz is abundant throughout Australia, but the exploration and discovery of HPQ occurrences are notably under-reported, making assessment of the HPQ potential in Australia extremely difficult. This paper presents a much-needed summary of the state of the HPQ industry, exploration and deposit styles in Australia. KEY POINTS: High-purity quartz (HPQ) is a key material for the manufacture of photovoltaic cells, semiconductors and other high-technology applications. HPQ can be recovered from a variety of different source rocks in a range of geological settings. Currently, the HPQ industry in Australia is under-utilised for high-technology applications, and historical exploration and mining records are under-reported and opaque. This review presents an outline of the characteristics, processing requirements and end uses of HPQ, and a summary of the operations, deposits, exploration targets and known occurrences of HPQ in Australia. [ABSTRACT FROM AUTHOR]

Tin doped cadmium oxide (Cd1-xSnxO) thin films at different tin (Sn) concentrations (x = 0, 0.03, 0.05, 0.07) were prepared using electron beam evaporation technique and subjected to various characterisations. From XRD, prepared thin films shows polycrystalline nature with cubic structure. FE-SEM nano-graphs confirmed the elongated oval shape morphology with 1:3 aspect ratios. FT-IR analysis revealed the presence of functional groups and chemical interactions. Raman spectrum was recorded in the range of 200 cm−1 to 1000 cm−1. Using Tauc's relation optical bandgap is calculated and it is found to be increased 2.00 eV – 2.40 eV. Photoluminescence spectra were recorded Cd1-xSnxO thin films and emission peaks were found in visible region. CIE diagrams confirm the thin films in blue- green portion. Using a source meter, the electrical properties were examined and it was observed that the electrical resistivity decreased. Magnetic properties reveals that the Sn-doped CdO thin films exhibit ferromagnetic nature. [ABSTRACT FROM AUTHOR]

π-conjugated polymers are arguably one of the most exciting classes of materials and have attracted substantial attention due to their unique optical and electronic properties. The introduction of transition metals into conjugated polymers tunes the optoelectronic properties of these metallopolymers, which may improve their performance in device applications. Graphene and reduced graphene oxide (RGO) derivatives are interesting materials with a unique structure and outstanding properties. The present work reports an investigation of three hybrid RGO and π-conjugated oligomers that contain ruthenium polypyridyl chromophores serving as models to provide molecular-level insight for the corresponding transition-metal-containing conjugated polymers. [ABSTRACT FROM AUTHOR]

The current research presents a new model on a volume fraction branch of Knowledge and photothermal effect in a semiconductor generalized thermoelasticity medium according to the Lord-Shulman Theory. The governing equations are provided considering voids, photothermal, semiconducting, and the theory of generalized thermoelasticity. The authors make use of the normal mode examination to solve the order of the equations in this phenomenon under the boundary conditions. The achieved results demonstrate the effect of photothermal, voids, the process of semiconductor, and the thermic relaxation time. The compared physical fields are given analytically and displayed in graphs. The achieved results display the possibility of applying the combination of the photothermal and semiconductors medium in biophysical, industries, structures, engineering, and chemical products with consideration of the photothermal, semiconducting, and voids. [ABSTRACT FROM AUTHOR]

An innovative Z-scheme WO3/g-C3N4 composite was efficiently produced via a straightforward hydrothermal method and applied to the photodegradation of phenol. The physiochemical behaviours of WO3, g-C3N4, WO3/g-C3N4 composite was analyzed by various analytical instruments. Compared to WO3, g-C3N4 single counterparts WO3/g-C3N4 Composite exhibits superior charge carriers' separation efficiency and also Z scheme mechanism promoted the superior pollutant degradation. Subsequently, the WO3/g-C3N4 composite achieving 93% with rate constant 0.0184 min− 1 phenol removal within 100 min. The noteworthy increased photocatalytic bustle of WO3/g-C3N4 composite was attributed to the synergetic effect between the boundary of WO3/g-C3N4. Curiously, WO3/g-C3N4 composite validates exceptional photostability during reusable experiment, accentuating its potential as a functioning photocatalyst for phenol removal. The antimicrobial tests showed that the developed photocatalyst effectively sterilizes both gram-positive Staphylococcus aureus and gram-negative Escherichia coli. Thus, the WO3/g-C3N4 nanocomposites are robust materials suitable for use as antimicrobial agents and photocatalysts activated by sunlight. [ABSTRACT FROM AUTHOR]

Co-precipitation was used for the preparation of delafossite CuCrO2 from nitrates under an inert N2 flow. The diffractograms show a pure phase, crystallizing in a rhombohedral delafossite structure (S G: R 3 ¯ m). Stability up to 900°C, indicating high electrostatic energy, is demonstrated by the thermogravimetric analysis (TGA). The formation of CuCrO2 is corroborated by x-ray photoelectron spectroscopy (XPS) analysis with valence states Cu+ and Cr3+. The forbidden band (2.49 eV) is assigned to the transition Cu+: dxz → hybridizedO2−: 2p/Cu+: dz2/s linearly bonded in CuO23− entities. The thermal dependence of the electrical conductivity follows an exponential law: {σ = σo exp(−0.13 eV/kT) (Ω-cm)− 1} where the electrical conductivity comes from low polaron hopping (LPH) among mixed states of Cu2+/+ in the basal (0 0 n) planes. The doping is due to Cu2O units, the conduction of which gives a hole mobility of ~ 10−4 cm2 V−1 s−1. The semiconductor behavior of CuCrO2 is supported by the interfacial capacitance versus potential (C−2− E); the negative slope indicates p-type conduction, with a flat band potential (Efb) of 0.16 VSCE. The valence band (5.03 eV/0.28 VSCE) is formed by O(2p)–Cr(3d) states. The electrochemical impedance spectroscopy plot shows an arc assigned to a capacitive comportment with a deviation from a pure capacitance and a dominant bulk contribution (Rb = 69 kΩ cm2). The center is positioned below the abscissa with a constant phase element. [ABSTRACT FROM AUTHOR]

This study investigates the effects of varying CuO doping concentrations on the performance of titanium dioxide (TiO2)-based or zinc oxide (ZnO)-based dye-sensitized solar cells (DSSCs). TiO2 or ZnO mixed with CuO at different weight percentages (0–50 wt %) was employed as photoanodes in DSSCs, prepared via mechanical mixing. X-ray diffraction analysis revealed the structural changes, showing that as the CuO content increased in the hybrid, the CuO peaks (notably at 35.5° and 38.7°) became more prominent. Morphological and elemental characterizations were conducted using SEM and XRF, respectively. The solar cells were photosensitized by Vitis lasbrusca (V.L.) extract and N3 dye. The presence of anthocyanin molecules in the extracted V.L. was confirmed using UV-VIS and FTIR spectroscopy. The electrochemical characterization demonstrated optimal solar conversion efficiencies at a 20% doping level for both photosensitizers. Specifically, in the V.L. dye, TiO2-CuO achieved a conversion efficiency of 7.18%, and ZnO-CuO reached 5.77%. In the N3 dye, TiO2-CuO showed an efficiency of 11.34%, and ZnO-CuO, 9.55%. Notably, undoped photoanodes displayed a significantly lower photovoltaic performance: for V.L. dye, TiO2 showed 1.12% and ZnO 0.87%; for N3 dye, TiO2 showed 6.02% and ZnO 4.39%. Doping was therefore effective, yielding up to a seven-fold increase in performance in the case of V.L. with TiO2, compared to undoped DSSCs. The results demonstrate that using the hybrid photoanode led to a considerable increase in performance compared to using only TiO2 or ZnO photoanodes, highlighting the potential of DSSCs as sustainable energy sources. [ABSTRACT FROM AUTHOR]