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The conversion of water current to voltage generation through graphene has gained interest in both basic physics and applications such as sensors and electricity generation systems. However, many aspects of the mechanism remain unclear. Recently, quantum-based momentum transfer theories have been reported, but these often do not account for flow conditions. In this study, we investigated the correlation between the flow conditions of a liquid medium and the electrical conduction of graphene through experiments and numerical calculations. Our results suggest that the necessary condition is that the flow must be neither irregular nor purely laminar; instead, graphene responds to the transition process of the fluid. This finding supports the extension of current theories and presents valuable insights for both basic science and industrial applications. [ABSTRACT FROM AUTHOR]

Layered double hydroxide (LDH) is considered a highly promising electrode material for supercapacitors (SCs) due to its high theoretical specific capacitance. However, LDH powders often suffer from poor electrical conductivity, structure pulverization, slow charge transport, and insufficient active sites. Herein, a self‐supporting electrode with a Mott–Schottky heterostructure has been designed for high‐performance SCs. The electrode consists of low crystallinity NiCo‐LDH nanosheets and vertical graphene (VG) directly grown on carbon cloth. The LDH was converted from a metal–organic framework (MOF) by the sol–gel method. This self‐supporting electrode provides fast charge transfer, reducing the pulverization effect and energy barrier. The Mott–Schottky heterostructure of LDH@VG regulates electron density and enhances electron transfer, as confirmed by density functional theory calculation. The optimized LDH@VG heterostructure electrode exhibits an excellent areal capacitance of 5513.8 mF cm−2 and rate capability of 82.1%. Furthermore, the fabricated hybrid SC demonstrates excellent energy density of 404.8 μWh cm−2 at 1.6 mW cm−2 and a remarkable cycling life, with a capacitance of 92.0% after 10 000 cycles. This work not only provides a simple dip‐coating and MOF conversion method to synthesize heterojunction‐based electrodes, but also broadens the horizon for designing advanced electrode materials for SCs. [ABSTRACT FROM AUTHOR]

Due to its suitable bandgap and excellent stability, 3C-SiC is being investigated as one of the promising candidates for photoelectrochemical (PEC) water oxidation. However, the limited surface activity and short carrier lifetime prevent 3C-SiC photoanodes from facilitating efficient PEC water splitting. To tackle these problems, this work proposes a plasma technique to control the crystal structure and optical characteristics of 3C-SiC. Nitrogen plasma induces carbon vacancies (Vc) and Si–N bonds, further leading to a narrower bandgap of 3C-SiC. The combination of Vc and N doping enhanced the light trapping capability of the electrode, thereby improving the efficiency of electron–hole pair separation and charge transfer, resulting in an accelerated water oxidation reaction, i.e., photocurrent density (2.50 mA cm−2 at 1.23 VRHE) increased by 7.6 times compared to that of pristine SiC. This work offers an effective strategy for regulating the electronic structure of SiC-based photoanodes by plasma treatment, which may be extended to other photoelectrodes for PEC application. [ABSTRACT FROM AUTHOR]

In this current study, the behavior of dysprosium oxide (Dy2O3) doped willemite glass‐ceramic (WGC) derived from ZnO‐B2O3‐RHA: Dy2O3 glasses and rice‐husk ash (RHA) works as the active alternative silica has been studied. The fusions of the ternary host system of oxide components doped with rare earth oxide go through the melt‐quench technique followed by solid‐state sintering on the compacted glass frits. The sintered green samples are characterized utilizing the physical, structural, and optical properties to investigate the effect of different sintering temperatures on the samples accordingly. The bulk density of WGC increases together with the increment of sintering temperature from 2.571 to 2.940 g cm–3. Meanwhile, the increment of sintering temperature escalates the crystallization of the main crystalline phase, Zn2SiO4, corroborated by the enlargement of average crystallite size from 161 to 550 nm. Furthermore, the emission activity in the WGC also intensifies on the green emission region (524 nm) accordingly. This fabricated Dy3+:WGC contributes to the nomination as the potential solid‐state lighting material. [ABSTRACT FROM AUTHOR]

We present the device properties of a nickel (Ni)-gallium oxide (Ga 2 O 3 ) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga 2 O 3 /In was created using a chemical vapor-deposited hBN film on a Ga 2 O 3 substrate. The current-voltage characteristics of the Schottky junction were investigated with and without the hBN interfacial layer. We observed that the turn-on voltage for the forward current of the Schottky junction was significantly enhanced with the hBN interfacial film. Furthermore, the Schottky junction was analyzed under the illumination of deep ultraviolet light (254 nm), obtaining a photoresponsivity of 95.11 mA/W under an applied bias voltage (-7.2 V). The hBN interfacial layer for the Ga 2 O 3 -based Schottky junction can serve as a barrier layer to control the turn-on voltage and optimize the device properties for deep-UV photosensor applications. Furthermore, the demonstrated vertical heterojunction with an hBN layer has the potential to be significant for temperature management at the junction interface to develop reliable Ga 2 O 3 -based Schottky junction devices., Competing Interests: The authors declare no competing financial interest., (© 2022 The Authors. Published by American Chemical Society.)