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Your search keyword '"Tie, Guipeng"' showing total 37 results
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37 results on '"Tie, Guipeng"'

10. Ultra-Smooth Polishing of Single-Crystal Silicon Carbide by Pulsed-Ion-Beam Sputtering of Quantum-Dot Sacrificial Layers.

Author

Qiao, Dongyang, Shi, Feng, Tian, Ye, Zhang, Wanli, Xie, Lingbo, Guo, Shuangpeng, Song, Ci, and Tie, Guipeng

Subjects
SILICON carbide, QUANTUM dots, SURFACE roughness, SILICON surfaces, CHEMICAL properties, ION beams
Abstract

Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties. However, due to its high hardness material properties, achieving high-precision manufacturing of single-crystal silicon carbide with an ultra-smooth surface is difficult. In this work, quantum dots were introduced as a sacrificial layer in polishing for pulsed-ion-beam sputtering of single-crystal SiC. The surface of single-crystal silicon carbide with a quantum-dot sacrificial layer was sputtered using a pulsed-ion beam and compared with the surface of single-crystal silicon carbide sputtered directly. The surface roughness evolution of single-crystal silicon carbide etched using a pulsed ion beam was studied, and the mechanism of sacrificial layer sputtering was analyzed theoretically. The results show that direct sputtering of single-crystal silicon carbide will deteriorate the surface quality. On the contrary, the surface roughness of single-crystal silicon carbide with a quantum-dot sacrificial layer added using pulsed-ion-beam sputtering was effectively suppressed, the surface shape accuracy of the Ø120 mm sample was converged to 7.63 nm RMS, and the roughness was reduced to 0.21 nm RMS. Therefore, the single-crystal silicon carbide with the quantum-dot sacrificial layer added via pulsed-ion-beam sputtering can effectively reduce the micro-morphology roughness phenomenon caused by ion-beam sputtering, and it is expected to realize the manufacture of a high-precision ultra-smooth surface of single-crystal silicon carbide. [ABSTRACT FROM AUTHOR]

Published
2024
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17. Research on Laser-Induced Damage Post-Restoration Morphology of Fused Silica and Optimization of Patterned CO 2 Laser Repair Strategy.

Author

Shen, Xiao, Song, Ci, Shi, Feng, Tian, Ye, Tie, Guipeng, Qiao, Shuo, Peng, Xing, Zhang, Wanli, and Hou, Zhanqiang

Subjects
FUSED silica, CARBON dioxide, INERTIAL confinement fusion, OPTICAL elements, CARBON dioxide lasers, SILICA fibers
Abstract

Fused silica has become the preferred optical material in the field of inertial confinement fusion (ICF) due to its excellent performance; however, these costly optical elements are vulnerable, and their manufacture is time-consuming. Therefore, the restoration of laser-induced damage for these optical elements is of great value. To restrain the post-restoration raised rim problem in the CO2 laser repair process to improve the restoration quality, the separate influences of key parameters of laser power, irradiation duration, and laser beam diameter on post-restoration pit morphology are compared in combined simulation and experimental studies. An optimized, patterned CO2 laser strategy is proposed and verified; the results indicate that, with the strategy, the rim height decreases from 2.6 μm to 1.52 μm, and maximal photo thermal absorption is decreased from 784.2 PPM to 209.43 PPM. [ABSTRACT FROM AUTHOR]

Published
2023
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29. Equipment for in situ measurement of machining defects of large aperture optical elements.

Author

Tie, Guipeng, Zhou, Haifeng, Shi, Feng, Chen, Jian, Qiao, Shuo, Tian, Ye, and Song, Ci

Subjects
*OPTICAL elements, *OPTICAL apertures, *SPEED measurements, *LIGHT elements, *MACHINING
Abstract

A set of in situ measurement equipment of large aperture strong light element based on the principle of laser scattering is established. The size and distribution of defects (damage points) can be judged by the laser scattering signal. The maximum scanning range is 700 mm*1000 mm. The type and size of defects are directly obtained by scanning the quartz sample with a diameter of 100 mm. The types of defects are pitting and scratches, and the width of the scratches and the diameter of the pitting are mostly in the range of 0–10μm. The processing time could reach 31.06s. The device can realize the on‐line in situ measurement of large aperture optical elements, and has the advantages of fast response speed and high measurement accuracy. [ABSTRACT FROM AUTHOR]

Published
2023
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30. 熔石英元件小尺寸集群损伤修复及检测技术 (特邀)

Author

Shi Feng, 石峰, primary, Qiao Shuo, 乔硕, additional, Deng Mingjie, 邓明杰, additional, Song Ci, 宋辞, additional, Tie Guipeng, 铁贵鹏, additional, Tian Ye, 田野, additional, Hao Qun, 郝群, additional, Wang Shanshan, 王姗姗, additional, Zhou Haifeng, 周海峰, additional, Chen Jian, 陈坚, additional, Sun Guoyan, 孙国燕, additional, and Shen Xiao, 申箫, additional

Published
2022
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36. 熔石英元件小尺寸集群损伤修复及检测技术 (特邀)

Author

石峰 Shi Feng, 乔硕 Qiao Shuo, 邓明杰 Deng Mingjie, 宋辞 Song Ci, 铁贵鹏 Tie Guipeng, 田野 Tian Ye, 郝群 Hao Qun, 王姗姗 Wang Shanshan, 周海峰 Zhou Haifeng, 陈坚 Chen Jian, 孙国燕 Sun Guoyan, and 申箫 Shen Xiao

Subjects
Space and Planetary Science, Aerospace Engineering, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics
Published
2022

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