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Your search keyword '"Toguchi, Shintaro"' showing total 4 results
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4 results on '"Toguchi, Shintaro"'

2. Effects of Layer-to-Layer Coupling on the Total-Ionizing-Dose Response of 3-D-Sequentially Integrated FD-SOI MOSFETs

Author

Toguchi, Shintaro, primary, Zhang, En Xia, additional, Rony, Mohammed W., additional, Luo, Xuyi, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Moreau, Stephane, additional, Cheramy, Severine, additional, Batude, Perrine, additional, Brunet, Laurent, additional, Andrieu, Francois, additional, and Alles, Michael L., additional

Published
2022
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4. Total-Ionizing-Dose Effects on 3-D Sequentially Integrated FDSOI Ring Oscillators

Author

Toguchi, Shintaro, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Moreau, Stephane, Batude, Perrine, Brunet, Laurent, Andrieu, Francois, and Alles, Michael L.

Abstract

Total-ionizing-dose (TID) responses are investigated for fully depleted silicon-on-insulator (FDSOI) ring oscillators (ROs) in 3-D architectures. Operational frequencies decrease after irradiation in these devices due primarily to threshold voltage shifts and transconductance degradation due to interface-trap buildup in the pull-up $p$ MOSFETs. 3-D sequentially integrated FDSOI ROs fabricated in the bottom layer of the 3-D structure show the most significant frequency degradation. The ac-bias irradiation leads to greater shifts than static-bias irradiation in these devices due to enhanced interface-trap buildup. Circuit simulations reinforce the relative importance of transconductance degradation in pull-up $p$ MOSFETs to the TID response of these ROs.

Published
2023
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