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Conventional refinement strategies used for three-dimensional electron diffraction (3D ED) data disregard the bonding effects between the atoms in a molecule by assuming a pure spherical model called the Independent Atom model (IAM) and may lead to an inaccurate or biased structure. Here we show that it is possible to perform a refinement going beyond the IAM with electron diffraction data. We perform kappa refinement which models charge transfers between atoms while assuming a spherical model. We demonstrate the procedure by analysing five inorganic samples; quartz, natrolite, borane, lutecium aluminium garnet, and caesium lead bromide. Implementation of kappa refinement improved the structure model obtained over conventional IAM refinements and provided information on the ionisation of atoms. The results were validated against periodic DFT calculations. The work presents an extension of the conventional refinement of 3D ED data for a more accurate structure model which enables charge density information to be extracted., (© 2024. The Author(s).)

The Edelstein effect is the origin of the spin-orbit torque: a current-induced torque that is used for the electrical control of ferromagnetic and antiferromagnetic materials. This effect originates from the relativistic spin-orbit coupling, which necessitates utilizing materials with heavy elements. Here, we show that in magnetic materials with non-collinear magnetic order, the Edelstein effect and, consequently, a current-induced torque can exist even in the absence of the spin-orbit coupling. Using group symmetry analysis, model calculations, and realistic simulations on selected compounds, we identify large classes of non-collinear magnet candidates and demonstrate that the current-driven torque is of similar magnitude as the celebrated spin-orbit torque in conventional transition metal structures. We also show that this torque can exist in an insulating material, which could allow for highly efficient electrical control of magnetic order., (© 2024. The Author(s).)

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. Altermagnetism is manifested as a three-fold component in the transverse magnetoresistance which arises due to the anomalous Hall effect., Competing Interests: Competing interestsThe authors declare no competing interests., (© The Author(s) 2024.)

Resistance of certain (conductive and otherwise isotropic) ferromagnets turns out to exhibit anisotropy with respect to the direction of magnetization: R ∥ for magnetization parallel to the electric current direction is different from R ⊥ for magnetization perpendicular to the electric current direction. In this review, this century-old phenomenon is reviewed both from the perspective of materials and physical mechanisms involved. More recently, this effect has also been identified and studied in antiferromagnets. To date, sensors based on the anisotropic magnetoresistance (AMR) effect are widely used in different fields, such as the automotive industry, aerospace or in biomedical imaging., Competing Interests: We declare we have no competing interests., (© 2023 The Authors.)

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antiferromagnetic CuMnAs in which imaging by x-ray photoemission reveals the presence of magnetic textures down to nanoscale, reaching the detection limit of this established microscopy in antiferromagnets. We achieve atomic resolution by using differential phase-contrast imaging within aberration-corrected scanning transmission electron microscopy. We identify abrupt domain walls in the antiferromagnetic film corresponding to the Néel order reversal between two neighboring atomic planes. Our work stimulates research of magnetic textures at the ultimate atomic scale and sheds light on electrical and ultrafast optical antiferromagnetic devices with magnetic field-insensitive neuromorphic functionalities.