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To break the von Neumann bottleneck, emerging non-volatile memories have gained extensive attention in hardware implementing neuromorphic computing. The device scaling with low operating voltage is of great importance for delivering a high-integrating and energy-efficient neuromorphic system. In this paper, we fabricated sub-10 nm ferroelectric capacitors based on HfZrO (HZO) film with varying HfO and ZrO components. Compared to the conventional HZO capacitors (a constant component of 1:1), the varying component ferroelectric capacitors show similar remnant polarization but a lower coercive electric field (Ec). This enables the partial domain switching processed at a lower pulse amplitude and width, which is essential for emulating typical synaptic features. In the MNIST recognition task, the accuracy of sub-10 nm ferroelectric artificial synapse can approach ∼85.83%. Our findings may provide great potential for developing next-generation neuromorphic computing-based ultra-scaled ferroelectric artificial synapses. [ABSTRACT FROM AUTHOR]

The artificial synapses are basic units in the hardware implementation of neuromorphic computing, whose performances should be gradually modulated under external stimuli. The underlying mechanism of the increasing and decreasing device conductance is still unclear in the Hf0.5Zr0.5O2 based synapses. In this study, the Hf0.5Zr0.5O2 capacitors with different stack orders are fabricated in atomic layer deposition, whose ferroelectric properties are investigated by analyzing the capacitanceâ€"voltage and polarization-voltage curves. The enhanced ferroelectricity is found after the rapid thermal annealing treatment for all the TiN/Hf0.5Zr0.5O2/TiN, TiN/HfO2-ZrO2/TiN and TiN/ZrO2-HfO2/TiN devices. In the device with poor ferroelectricity, the conductance gradually decreases under both positive and negative identical pulse schemes, which corresponds to the gradual dissolution process of the conductive filaments established in the initial pulse. For the capacitors with strong ferroelectricity, dual-direction conductance modulation can be observed due to the partial domain switching process, which can emulate the potentiation and depression process of biological synapses. [ABSTRACT FROM AUTHOR]

The artificial synapses are basic units in the hardware implementation of neuromorphic computing, whose performances should be gradually modulated under external stimuli. The underlying mechanism of the increasing and decreasing device conductance is still unclear in the Hf 0.5 Zr 0.5 O 2 based synapses. In this study, the Hf 0.5 Zr 0.5 O 2 capacitors with different stack orders are fabricated in atomic layer deposition, whose ferroelectric properties are investigated by analyzing the capacitance-voltage and polarization-voltage curves. The enhanced ferroelectricity is found after the rapid thermal annealing treatment for all the TiN/Hf 0.5 Zr 0.5 O 2 /TiN, TiN/HfO 2 -ZrO 2 /TiN and TiN/ZrO 2 -HfO 2 /TiN devices. In the device with poor ferroelectricity, the conductance gradually decreases under both positive and negative identical pulse schemes, which corresponds to the gradual dissolution process of the conductive filaments established in the initial pulse. For the capacitors with strong ferroelectricity, dual-direction conductance modulation can be observed due to the partial domain switching process, which can emulate the potentiation and depression process of biological synapses., (© 2022 IOP Publishing Ltd.)