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Your search keyword '"Yang, Mingchao"' showing total 24 results
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24 results on '"Yang, Mingchao"'

1. Airfoil Optimization in Propeller Slipstreams Using Generative Adversarial Networks

Author

Li, Ziyu, Yang, Mingchao, Wang, Zhengping, Wei, Wenling, Zhou, Zhou, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Tan, Kay Chen, Series Editor, and Fu, Song, editor

Published
2024
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14. Comparative Study on High-Temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-Integrated MOSFET

Author

Gu, Zhaoyuan, Yang, Mingchao, Yang, Yi, Liu, Xihao, Gao, Mingyang, Qi, Jinwei, Liu, Weihua, Han, Chuanyu, Geng, Li, and Hao, Yue

Abstract

For 4H-SiC mosfets, the parasitic PiN body diode causes problems such as significant forward voltage drop of body diode and poor reverse recovery characteristics during high-temperature operation. A reasonable solution is a mosfet with an integrated Schottky barrier diode to deactivate the PiN body diode. Since SiC mosfets can operate at extremely high temperatures, the characterization of electrical parameters at high temperatures and changing with the temperature are very important for high power applications and system reliability. However, there is a lack of comparison and analysis of the two devices on electrical properties at ultrahigh temperatures. In this article, a 1.2 kV conventional mosfet and a mosfet integrated with a junction barrier Schottky diode (JBSFET) were fabricated with a consistent process flow. In the temperature range from 300 to 575 K, analytical models of the temperature-dependent electrical parameters of these two devices were established and compared, which were successfully verified by the measurements. These models can provide guidance for ultrahigh temperature applications of JBSFETs. Temperature-related expressions can also be used for junction temperature monitoring of temperature-sensitive electrical parameters. Experimental results show that JBSFET has better third quadrant conduction characteristics and higher temperature stability below 450 K, but loses obvious performance advantages at 575 K. So, the recommended operating temperature range of JBSFET is from 300 to 450 K. Finally, the continuous operation performance of the body diodes in buck converters is analyzed. The higher efficiency of buck converter based on JBSFET's body diode indicates its great application potential in compact converters, especially in the recommended temperature range.

Published
2024
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17. Visible-Blind Photodetector Based on p-i-n Junction 4H-SiC Vertical Nanocone Array

Author

Yang Mingchao, Xiaolong Zhao, Yahui Cai, Liangliang Zhang, Shuwen Guo, Xianghe Fu, Yongning He, and Guo Xiaochuan

Subjects
Materials science, business.industry, Photodetector, Biasing, medicine.disease_cause, Electronic, Optical and Magnetic Materials, Light intensity, Responsivity, Etching (microfabrication), medicine, Optoelectronics, Electrical and Electronic Engineering, Inductively coupled plasma, business, Ultraviolet, Electron-beam lithography
Abstract

In this article, we report the first experimental results of a novel 4H-silicon carbide (SiC) p-i-n photodetector based on a vertical nanocone array (NCA). It is fabricated by electron beam lithography and inductively coupled plasma (ICP) etching technology. The performance of static and dynamic behavior was studied systematically. It shows the responsivity of ~41.9 mA/W under 360 nm at a bias voltage of -0.5 V and has a linear response to the ultraviolet (UV) light in a wide light intensity range of 0.1-10⁴ mW/cm². The response time decreased as the light intensity rose from 3 mW/cm² to 5 W/cm² and then leveled off at higher light intensity (>100 mW/cm²), which is about 0.25 ms. The photodetector -3-dB cutoff is ~3400 Hz at λ = 360 nm and light intensity = 100 mW/cm². Besides, the detector can respond to the UV light from 260 to 360 nm and the peak responsivity is ~78 mA/W at 320 nm. The analysis results have reference values for the development of an innovative 4H-SiC UV photodetector to some extent.

Published
2021

24. Oxygen-Terminated Polycrystalline Boron-Doped Diamond Superhydrophobic Surface with Excellent Mechanical and Thermal Stabilities.

Author

Wang P, Wang T, Yang M, Wang Q, Yuan X, Cui Z, Gao N, Liu J, Cheng S, Jiang Z, Jin H, and Li H

Abstract

Superhydrophobic surfaces are of great interest because of their remarkable properties. Due to its maximal hardness and chemical inertness, diamond film has great potential in fabricating robust superhydrophobic surfaces. In the present study, an oxygen-terminated polycrystalline boron-doped diamond (O-PBDD) superhydrophobic surface with micro/nano-hierarchical porous structures is developed. The preparation method is very simple, requiring only sputtering and dewetting procedures. The former involves sputtering gold and copper particles onto the hydrogen-terminated polycrystalline boron-doped diamond (H-PBDD) to form gold/copper films, whereas the latter involves placing the samples in an atmospheric tube furnace to form hierarchical pores. By controlling the etching parameters, the wettability of the O-PBDD surface can be adjusted from hydrophilic to superhydrophobic, which is significantly different to the normal hydrophilicity feature of O-termination diamonds. The water contact angle of the obtained O-PBDD surface can reach 165 ± 5°, which is higher than the superhydrophobic diamond surfaces that are reported in the literature. In addition, the O-PBDD surface exhibits excellent durability; it can maintain satisfactory superhydrophobicity even after high-pressure, high-temperature, and sandpaper friction tests. This work provides a new research direction for fabricating robust superhydrophobic materials with diamond film., (© 2024 Wiley‐VCH GmbH.)

Published
2024
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