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We report a method for the directed self-assembly (DSA) of block copolymers (BCPs) in which a first BCP film deploys homopolymer brushes, or "inks", that sequentially graft onto the substrate's surface via the interpenetration of polymer molecules during the thermal annealing of the polymer film on top of existing polymer brushes. By selecting polymer "inks" with the desired chemistry and appropriate relative molecular weights, it is possible to use brush interpenetration as a powerful technique to generate self-registered chemical contrast patterns at the same frequency as that of the domains of the BCP. The result is a process with a higher tolerance to dimensional and chemical imperfections in the guiding patterns, which we showcase by implementing DSA using homopolymer brushes for the guiding features as opposed to more robust cross-linkable mats. We find that the use of "inks" does not compromise the line width roughness, and the quality of the DSA as a lithographic mask is verified by implementing a robust "dry lift-off" pattern transfer.

With the technological development and progresses of the semiconductor industry， chip manufacturing is stepping forward to the advanced technology nodes under the impetus of Moore's Law. Meanwhile，the corresponding advanced materials for lithography are highly desired to satisfy the rapid development of advanced lithographic patterning. This review focuses on the composition and performances of materials for lithography. The photoresist from ultraviolet，deep ultraviolet，and extreme ultraviolet light as well as semiconducting photoresist and materials for directed self-assembly （DSA） are systematically summarized. Subsequently，the current market development and requirement of materials for lithography are critically examined. Finally，after a brief summary，an outlook for the prospective studies on advanced materials for lithography and the corresponding solutions to improve the domestic market occupancy is provided [ABSTRACT FROM AUTHOR]

We leveraged the potential of high χ-low N block copolymer (BCP), namely, poly[2-(perfluorobutyl) ethyl methacrylate]- block -poly(2-vinylpyridine) (P2PFBEMA- b -P2VP), and demonstrated its utility in next-generation nanomanufacturing. By combining molecular dynamics simulations with experiments, the χ value was calculated to be as high as 0.4 (at 150 °C), surpassing similar structures. Highly ordered features suitable for application were observed, ranging in periods from 19.0 nm down to 12.1 nm, with feature sizes as small as 6 nm. Transmission electron microscopy images of the BCP solutions indicated that preformed micelles in the solution facilitated the self-assembly process of the thin film. In addition, the vertical or parallel orientation of the cylindrical structure was determined by manipulating the solvent, substrate, and annealing conditions. Finally, guided by a wide topographical template, nearly defect-free directed self-assembly (DSA) lines with a resolution of 8 nm were achieved, highlighting its potential practical application in DSA lithography technology.