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Controlling the oxygen content becomes a formidable challenge when using the traditional method of copper pre-oxidation to attach copper metal to AlN ceramic substrates. The issue results in copious amounts of copper oxide (CuO) formation. Excessive CuO causes voids to form at the interfacial junction, harming the long-term reliability of the copper-bonded substrate. To address these issues, this study employed the sol-gel technique, in which a copper-containing solution was applied to the AlN substrate via spin coating, followed by thermal treatment in a nitrogen-rich atmosphere. The goal was to create thin films of Cu 2-x O to improve the adhesion between copper and AlN substrates. It was observed that the surface roughness of the resulting Cu 2-x O thin film after 5 spin-coating cycles was the lowest (3.48 nm). Furthermore, at a fixed thickness of the Cu 2-x O oxide layer (approximately 36 nm), insufficient oxygen content in the thin film heated at 250 °C prevented the formation of sufficient Cu–O eutectic liquid at high temperatures, resulting in insufficient copper-bonded substrate bonding strength (0.47 MPa). When the thin film was heated to 400 °C, the proportion of the CuO phase in the film increased, effectively increasing the bonding strength of the copper-bonded substrate (0.84 MPa). [ABSTRACT FROM AUTHOR]

In this paper, an all-Si resonant pressure microsensor based on eutectic bonding was developed, which can eliminate thermal expansion coefficient mismatches and residual thermal stresses during the bonding process. More specifically, the resonant pressure microsensor included an SOI wafer with a pressure-sensitive film embedded with resonators, which was eutectically bonded with a silicon cap for vacuum encapsulation. The all-Si resonant pressure microsensor was carefully designed and simulated numerically, where the use of the silicon cap was shown to effectively address temperature disturbances of the microsensor. The microsensor was then fabricated based on MEMS processes where eutectic bonding was adopted to link the SOI wafer and the silicon cap. The characterization results showed that the temperature disturbances of the resonant pressure microsensor encapsulated with the silicon cap were quantified as −0.82 Hz/°C of the central resonator and −2.36 Hz/°C of the side resonator within a temperature range from −40 °C to 80 °C, which were at least eight times lower than that of the microsensor encapsulated with the glass cap. Compared with the microsensor using the glass cap, the all-silicon microsensor demonstrated an accuracy improvement from 0.03% FS to 0.01% FS and a reduction in short-term frequency fluctuations from 3.2 Hz to 1.5 Hz. [ABSTRACT FROM AUTHOR]

We explore compatibility of Ru with Al-Ge eutectic wafer bonding. We first present experiments to check for the presence of Ru ternary alloy poisoning inhibiting Al-Ge melting as well as evaluations of Al-Ge melt wettability on Ru and diffusion outcomes following bond-simulating anneals. Results show that Ru is stable with no observed microstructural changes or dissolution in the melt, indicating no ternary poisoning for the applied thermal budget. Ru was found to act as an effective barrier offering good melt wettability in all considered configurations with Al and Ge. From inspection of the binary constituents of Al-Ge-Ru we propose that Al-Ge eutectic melting temperature will decrease marginally for Ru contamination in a 1-2% range before a drastic increase in melting temperature (>10°C/% Ru) at higher Ru compositions. We then demonstrate wafer-level packaged 200 mm devices and MEMS with strong bond outcomes of devices bearing Ru contacts. We conclude that Ru has high compatibility with Al-Ge eutectic bonding. [2022-0037] [ABSTRACT FROM AUTHOR]

This paper presented a temperature-insensitive resonant pressure microsensor where silicon based resonators anchored on a pressure-sensitive diaphragm were vacuum packaged by a silicon cap based on eutectic bonding. Incoming pressures deformed the pressure-sensitive diaphragm and built stresses around resonators for frequency modulation while under temperature challenges, deformations of silicon based resonators and the vacuum cap were consistent and thus no stresses were generated on resonators. The temperature-insensitive resonant pressure microsensor was analyzed in both theoretical analysis and numerical simulations with confirmed high pressure sensitivities and low temperature disturbances. The resonant pressure microsensor was then fabricated by key steps of photolithography, deep reactive ion etching, and eutectic bonding and characterized in both open-loop and close-loop testing systems. Characterization results showed that the quality factors of resonators were $\sim 10000$ with pressure sensitivity of 82.98 Hz/kPa and temperature disturbance of −0.63 Hz/° (the lowest result among previously reported resonant pressure microsensors). In summary, the temperature-insensitive resonant pressure microsensor developed in this study exhibited a fitting accuracy better than 0.02% FS within the pressure range of 10 to 120 kPa and the temperature range of −45 to $85^{\circ }\text{C}$. [ABSTRACT FROM AUTHOR]

In this paper, an all-Si resonant pressure microsensor based on eutectic bonding was developed, which can eliminate thermal expansion coefficient mismatches and residual thermal stresses during the bonding process. More specifically, the resonant pressure microsensor included an SOI wafer with a pressure-sensitive film embedded with resonators, which was eutectically bonded with a silicon cap for vacuum encapsulation. The all-Si resonant pressure microsensor was carefully designed and simulated numerically, where the use of the silicon cap was shown to effectively address temperature disturbances of the microsensor. The microsensor was then fabricated based on MEMS processes where eutectic bonding was adopted to link the SOI wafer and the silicon cap. The characterization results showed that the temperature disturbances of the resonant pressure microsensor encapsulated with the silicon cap were quantified as −0.82 Hz/°C of the central resonator and −2.36 Hz/°C of the side resonator within a temperature range from −40 °C to 80 °C, which were at least eight times lower than that of the microsensor encapsulated with the glass cap. Compared with the microsensor using the glass cap, the all-silicon microsensor demonstrated an accuracy improvement from 0.03% FS to 0.01% FS and a reduction in short-term frequency fluctuations from 3.2 Hz to 1.5 Hz.

A miniaturized lead zirconate titanate (PZT)-actuated Fabry-Perot interferometer (FPI) was developed for an 850 nm light beam selection by modulating the air gap between two refractive mirrors. The developed FPI consists of mirrors, a PZT actuator for air gap modulation, metal electrodes, and interface electronics capable of applying a square voltage at a frequency of 0.1 Hz. Eutectic wafer bonding method was employed to bond two mirrors through rapid thermal annealing (RTA) and applying mechanical pressure for a short time to minimize the interdiffusion between layers. The PZT actuator and metal electrodes serve as a thickness spacer to create an air gap between the two mirror plates. Alternating high and low dielectric layers (TiO 2 and SiO 2) with precise thickness and high crystallization quality were utilized for the formation of the refractive mirror because these layers offer high reflectivity and low absorption loss, enabling effective transmission of a specific wavelength in the incident light beam. By applying 0.1 Hz square pulses to the PZT actuator, the air gap was modulated, resulting in significant shifts in the center wavelength of the filtered beam at the desired wavelength. The study demonstrates the successful modulation and optimization of transmission peaks, ensuring a sharp full width at half maximum (FWHM) and high transmission rate. It also provides comprehensive experimental process factors for optimizing heat treatment conditions for PZT and refractive mirrors, minimizing metal interdiffusion between the dielectric layers, and ensuring mirror plate flatness. The device parameter effects such as cavity length orders, sequence of refractive indices for dielectric layers, and the extent of elongation of PZT with applied voltage were systematically studied to achieve optimal performance of FPI filter. The developed interface electronics allow voltage modulation up to 21.9 V at a frequency of 0.1 Hz, while preserving the elasticity of the PZT actuator. [Display omitted] • A miniaturized PZT-controlled Fabry-Perot Interferometer (FPI) designed for selecting light beam at 850 nm was developed. • Interface electronics was implemented that allow voltage modulation up to 53.8 V in DC voltage. • Transmission peaks were effectively modulated, maintaining both a sharp FWHM and a high transmission rate. • Comprehensive insights for bonding, minimal metal interdiffusion between layers, and the flatness of mirror were provided. [ABSTRACT FROM AUTHOR]