1. High energy storage performance for flexible PbZrO3 thin films by seed layer engineering.
- Author
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Yin, Chao, Zhang, Tiandong, Zhang, Bowen, Zhang, Changhai, and Chi, Qingguo
- Subjects
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ENERGY storage , *THIN films , *FERROELECTRIC thin films , *ENERGY density , *SOL-gel processes , *HEAT storage , *ELECTRONIC equipment - Abstract
Antiferroelectric film capacitors have attracted increasing attention due to their excellent energy storage properties. In this work, PbZrO 3 (PZO) antiferroelectric films have been prepared on the flexible fluorphlogopite (Mica) and rigid Pt/Ti/SiO 2 /Si substrates with a seed layer of LaNiO 3 (LNO) layer by sol-gel process. The microstructure and energy storage properties of the films have been systematically studied. The results show that the Mica-Pt-LNO-PZO (M -LNO-PZO) thin film has an improved energy storage density (W rec) of 16.6 J/cm3 with a charge and discharge efficiency (η) of 50.4%. Furthermore, the flexible thin films exhibit good stability under a wide working temperature range of 25–140 °C and an electric fatigue endurance of 107 cycles. Besides, the capacitive films can endure a bending radius of 4 mm and 104 bending cycles (@ r = 4 mm) with almost unchanged in the energy storage properties. The excellent energy storage properties endow inorganic thin films with great potential in flexible electronic devices. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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