1. Exploiting nanostructure-thin film interfaces in advanced sensor device configurations
- Author
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Jha, Shrawan, Wang, Hong-En, Kutsay, Oleksandr, Jelenković, Emil V., Chen, Kevin J., Bello, Igor, Kremnican, Vladimir, and Zapien, Juan Antonio
- Subjects
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ZINC oxide thin films , *INTERFACES (Physical sciences) , *HETEROSTRUCTURES , *X-ray diffraction , *FIELD-effect transistors , *GALLIUM nitride - Abstract
Abstract: In this report, we present a study on the exploitation of nanostructure-thin film interfaces. Here, the objective is to utilize such interfaces for developing nanostructures for advanced sensing devices, while using state-of-the-art microelectronic technology that enables batch production. In this context, growth of ZnO nanostructures on the GaN/AlGaN heterostructure layers was studied. A fabrication process, based on a hydrothermal growth method, was used for preparing the interfaces of nanostructured thin film. Samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) and obtained results suggested near epitaxial quality of the hetero-interface. Field-effect transistors (FETs) based on ZnO nanorods/GaN heterostructures were fabricated and tested in a controlled gas environment. Thus, it was demonstrated that nanostructures could be exploited in unconventional ways by employing them in scalable and batch-producible conventional semiconductor devices. [Copyright &y& Elsevier]
- Published
- 2012
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