1. Engineering ReRAM for high-density applications.
- Author
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Calderoni, Alessandro, Sills, Scott, Cardon, Chris, Faraoni, Emiliano, and Ramaswamy, Nirmal
- Subjects
- *
NONVOLATILE random-access memory , *TELECOMMUNICATION , *COMPUTER algorithms , *COMPUTER programming , *SEMICONDUCTOR storage devices - Abstract
Resistive random access memory (ReRAM) devices are emerging candidates for the next generation of nonvolatile high-density memory (Sills et al., 2014). The value proposition for this technology is bit alterability, high speed operation, long retention and high endurance. In addition, low-power and low-current operation is highly desirable for high-density memory systems targeting the growing mobile market. This paper presents various challenges in engineering a ReRAM cell suitable for high-density applications such as material selection, programming algorithms, noise issues and scaling path. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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