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Monitoring the defective multichip insulated gate bipolar transistor (IGBT) module is a cost-effective approach to improve the quality of customer service. A method using time duration of the gate charge is proposed to monitor bond wires fatigue of the multichip IGBT modules when the modules are in the off-state. It is based on the fact that failure of the chip branch due to bond wires fatigue changes the gate input capacitance of the multichip IGBT module. The health state of bond wires can be converted into the change of time duration of gate charge under the constant gate current. A driver containing the constant current source is proposed. The study results indicate that the time duration of the gate charge decreases significantly when the failure of the chip branch occurs, and the effect of junction temperature can be ignored within the special range of gate voltage. Condition monitoring can be implemented during the off-state of the multichip module and without considering the effects of junction temperature. The confirmatory experiment is carried out to verify the correctness of the proposed method. [ABSTRACT FROM AUTHOR]

Insulated-gate bipolar transistor (IGBT) modules and dc-link capacitors are important parts in the majority of power electronic converters which contribute to cost, size, and failure rate on a considerable scale. This paper presents an online condition monitoring method for both IGBT modules and dc-link capacitors of power converters based on short-circuit current of an IGBT module, which is a good condition indicator according to the theory analysis. The failure prediction of dc-Link capacitor is realized by equivalent series resistance, which can be calculated by short-circuit current and a step voltage, and the bond wires fatigue can also be identified by the short-circuit current. The proposed method is capable for detecting small changes in the failure indicators of IGBT modules and electrolytic capacitors, and its effectiveness is validated by a confirmatory experiment. The novelty of the proposed method is that the degradations of IGBT modules and capacitors can be identified simultaneously, and has the merits of low cost and circuit simplicity [ABSTRACT FROM PUBLISHER]

Finding and replacing the defective insulated-gate bipolar transistor (IGBT) module timely by monitoring the ageing state of IGBT can improve the reliability of a power converter and reduce the loss caused by IGBT failure. A method for detecting the condition of bond wires in IGBT module by identifying the short-circuit current of IGBT module is presented in this paper. It is based on the fact that parasitic parameters of IGBT module are affected by the local damage induced by ageing over time, and these changes can be easily detected by monitoring the difference of short-circuit current. The study results indicate that short-circuit current of IGBT module decreases with module ageing over time, and the difference of short-circuit current caused by junction temperature is much smaller than that caused by bond wires fatigue on a specific gate driving voltage. Therefore, the IGBT module in the power converter can be diagnosed by detecting the difference of short-circuit current without considering the effects of junction temperature. Finally, a confirmatory experiment is carried out, and the correctness of the method proposed in this paper is verified. [ABSTRACT FROM AUTHOR]