1. Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium Electrode.
- Author
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Yeh, Tsung-Han, Chen, Po-Hsun, Lin, Chih-Yang, Tseng, Yi-Ting, Chen, Wen-Chung, Lin, Chun-Chu, Chang, Ting-Chang, Lee, Ching-Ting, and Lee, Hsin-Ying
- Subjects
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OXIDE electrodes , *METAL-insulator transitions , *VANADIUM oxide , *ELECTRODES , *VANADIUM , *COMPUTER storage devices - Abstract
In this study, vanadium (V) was used as a top electrode in a vanadium oxide (VOx)-based selector device. Electroforming was performed to form a threshold region with metal–insulator transition (MIT) at both V electrode and VOx switching layers without annealing during fabrication. The simple V/VOx/TiN structure obtained was scalable and compatible with complementary metal–oxide–semiconductors. All electrical measurement results indicated that V/VOx/TiN selectors exhibited excellent characteristics such as high uniformity, a short switching time of 60 ns, a robust endurance of >109 cycles, and high reliability and stability. Both the simulation analysis and current fitting method were applied to further validate experimental results. Consequently, we developed a nanoscale V/VOx/TiN selector with excellent characteristics, which can be potentially applied to future highdensity crossbar memory devices to overcome sneak-path problems. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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