Search

In this paper, the sensitivity of the neural network (NN) outputs to device parameter uncertainties (non-idealities) in inverter-based memristor (IM) crossbar neuromorphic circuits is mathematically modeled and verified using exhaustive circuit and system-level simulations. The NN sensitivity is obtained by modeling the sensitivity of the IM neuron output to the non-idealities of its circuit elements. The analysis reveals a higher sensitivity of the output voltage of the IM neuron to the non-idealities of the inverters compared to the conductance variation of the memristors. Among the inverter non-idealities, horizontal shift of the inverters voltage transfer characteristic (VTC) shows the highest impact on the output voltage of the neuron. To reduce the accuracy loss due to the variations, a training approach which includes a sensitivity term in the cost function of the training phase, is suggested. The achievable improvements through the said NN training approach are evaluated. In the evaluation, the California Housing, MNIST, and Fashion MNIST datasets are employed. The results show up to 50% reduction in the NN output variations in the presence of circuit elements’ non-idealities. [ABSTRACT FROM AUTHOR]

In this paper, a method for offline training of inverter-based memristive neural networks (IM-NNs), called ERIM, is presented. In this method, the output voltage of the inverter is modeled very accurately by considering the loading effect of the memristive crossbar. To properly choose the size of each inverter, its output load and the required slope of its voltage transfer characteristic (VTC) for an acceptable level of resiliency to the circuit element non-idealities are taken into account. The efficacy of ERIM is investigated by comparing its accuracy to those of two recently proposed offline training methods for IM-NNs (RIM and PHAX). The study is performed using IRIS, BCW, MNIST, and Fashion MNIST datasets. Simulation results show that 72% (56%) reduction in average energy consumption of the trained networks is achieved compared to RIM (PHAX) thanks to proper sizing of the inverters. In addition, due to the higher accuracy of the NN mathematical model, ERIM results in significant improvements in the match between the results of high-level modeling and HSPICE simulations while exhibiting lower sensitivity to circuit element variations. [ABSTRACT FROM AUTHOR]