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e (for fabrication of advanced structures). Cu-Sn TLP bonding is employed herein because of its high remelting temperature and desirable thermal and electrical conductivities. The bonding starts with a stack of Cu-Sn-Cu metal layers that eventually transforms to Cu-Sn alloys. As the alloys have melting temperatures (Cu3Sn: > 600 ?C, Cu6Sn5: > 400 ?C) significantly higher than the process temperature, the process can be repeated without damaging previously bonded layers. A Cu-Sn TLP bonding process was developed using thin Sn metal sheets inserted between copper layers on silicon die and direct bonded copper substrates, emulating the process used to construct automotive power modules. Bond quality is characterized using (1) proof-of-concept fabrication, (2) material identification using scanning electron microscopy and energy-dispersive x-ray spectroscopy analysis, and (3) optical analysis using optical microscopy and scanning acoustic microscope. The feasibility of multiple-sided Cu-Sn TLP bonding is demonstrated by the absence of bondline damage in multiple test samples fabricated with double- or four-sided bonding using the TLP bonding process. [ABSTRACT FROM AUTHOR]