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Block copolymer (BCP) self‐assembly‐assisted doping for semiconductors is used to achieve discrete doping with nanometer‐scale junction depth, high throughput, and large area coverage. As devices become smaller and more sophisticated, spatial control of dopants becomes more critical. A variety of doping methods, such as monolayer doping and δ‐doping, have been developed to replace the conventional doping method, ion‐implantation; however, lateral patterning of dopants relies on photo‐ or e‐beam lithography. To address these challenges, a self‐assembling dopant (boron)‐containing BCP is designed to directly pattern dopants on the nanometer scale. This method skips the lithography step and is compatible with directed self‐assembly approaches. The effect of the boron concentration in the BCP on the doping performance is systematically studied by changing the volume fraction of the boron‐containing block while keeping the domain spacing and the mesoscale morphology constant. Successful self‐assembly of the BCP into a hexagonally packed cylindrical morphology is confirmed by small‐angle X‐ray scattering and resonant soft X‐ray scattering with a 26 nm cylinder‐to‐cylinder distance. Doping silicon using these BCPs enables discrete doped areas with shallow (7–13 nm) junction depth as demonstrated by the depth profile of boron, and supported by a sheet resistance study. [ABSTRACT FROM AUTHOR]

Since doped polymers require a charge‐neutralizing counter‐ion to maintain charge neutrality, tailored and high degrees of doping in organic semiconductors requires an understanding of the coupling between ionic and electronic carrier motion. A method of counter‐ion exchange is utilized using the polymeric semiconductor poly[2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b]thiophene] ‐C14 to deconvolute the effects of ionic/polaronic interactions with the electrical properties of doped semiconducting polymers. In particular, exchanging the counter‐ions of the dopant nitrosonium hexafluorophosphate enables investigation into the role of counter‐ion size from 5.2 to 8.2 Å in diameter. The orientational order of the polymeric crystallites is not affected with this exchange process while effectively modifying the counter‐ion distance to the charge carrier. Doped films have electrical conductivities of 320 S cm−1 and are not sensitive to an increased ion‐polaron distance. It is posited that other factors dominate the electrical properties at a device scale, such as the morphology and presence of domain boundaries. Interestingly, the temperature stability of the doped film can be drastically improved with the use of counter‐ions containing less labile bonds. This platform serves as a unique way to retain the morphology of polymeric thin films while studying charge interactions at the local scale. [ABSTRACT FROM AUTHOR]

The article discusses study on large-area, nanometer-scale discrete doping of semiconductors via block copolymer self-assembly. Topics discussed include boron concentration profiles determined using secondary ion mass spectrometry (SIMS), investigation of transmission electron micrographs of as-doped silicon (Si) substrates and surface morphology of spun-coated films studied using tapping mode atomic force microscopy (AFM) reveals a quasi-hexagonal array of spherical micelles.

A fluctuation X-ray scattering experiment has been carried out on platinum-coated gold nanoparticles randomly oriented on a substrate. A complete algorithm for determining the electron density of an individual particle from diffraction patterns of many particles randomly oriented about a single axis is demonstrated. This algorithm operates on angular correlations among the measured intensity distributions and recovers the angular correlation functions of a single particle from measured diffraction patterns. Taking advantage of the cylindrical symmetry of the nanoparticles, a cylindrical slice model is proposed to reconstruct the structure of the nanoparticles by fitting the experimental ring angular auto-correlation and small-angle scattering data obtained from many scattering patterns. The physical meaning of the refined structure is discussed in terms of their statistical distributions of the shape and electron density profile. [ABSTRACT FROM AUTHOR]