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In this paper, the effects of injection molding on structure and properties of poly(styrene‐ethylene‐butylene‐styrene) (SEBS) and its nanocomposite with a functionalized montmorillonite (FMMT) were illustrated by comparison with the results of hot pressing. The injection‐molded SEBS and its FMMT nanocomposite have a skin‐core morphology with FMMT platelets more preferentially aligned along the sample plane, while hot‐pressed samples not. The injection‐molded samples also have a dense structure, and a less extent of microphase separation. In the injection molding process, the high shear flow coupled with solidification in presence of temperature gradient and high pressure in the closed cavity greatly affect the morphology and structure of the SEBS and its nanocomposites. The results also indicate attractive interaction between the soft segments of SEBS and the long alkyl silane chain grafted to FMMT, which allows FMMT to form a macroscopic network structure after the high‐speed and high‐pressure injection molding. The SEBS/FMMT‐injected nanocomposite have the highest tensile strength and the best corrosion resistance, which can be attributed to the dense skin‐core structure, stronger SEBS/FMMT interaction and the preferentially aligned FMMT platelets. [ABSTRACT FROM AUTHOR]

Constructing isotype g‐C3N4/g‐C3N4 heterojunction is an approach to improve the efficiency of g‐C3N4 towards solar‐assisted oxidation of water. Such functional configuration can effectively overcome the intrinsic drawback of rapid charge recombination of g‐C3N4. Here, a modified g‐C3N4, with homogeneous phosphorus doping, is prepared in this work through a phosphide‐involved gas phase reaction. The resulting P‐g‐C3N4 displays altered electronic structure, including upshifted band edge potential, narrowed band gap and improved electronic conductivity. These features allow P‐g‐C3N4 as an outstanding candidate to form isotype junction with pristine g‐C3N4. As expected, the accelerated charge separation and migration in target junction is validated by various measurements. The optimized isotype g‐C3N4/P‐g‐C3N4 heterojunction achieves a photocurrent as high as 0.3 mA cm−2 at 1.23 V vs RHE (AM 1.5G, 100 mW cm−2), representing 8‐fold's enhancement compared with pristine g‐C3N4. The present strategy for constructing g‐C3N4‐based isotype heterojunction networks is found effective for large‐scale manufacturing. Isotype photoanode: A phosphorus‐doped g‐C3N4 with suitable electronic structure was explored to construct metal‐free isotype photojunction in large‐scale manufacturing. The percolated networks exhibit largely increased photocurrent than its single component as a result of efficient charge transfer being qualitatively identified. [ABSTRACT FROM AUTHOR]