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To be faster and more precise than the numerical technique for the computation of the photo-induced plasma in semiconductor, an analytical solution has to be developed. In this article, the Hankel transform is used to simplify the solution of the differential equation of second order with nonsconstant coefficient, known as the diffusion equations. The resulting expression of the 3D carrier density includes all the physical parameters of the substrate and the laser beam as well. A parametric study was also feasible using the developed expressions. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1718–1721, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21754 [ABSTRACT FROM AUTHOR]

Using a 219 bipolar physical model a comparison is made between GaAs and AllnAs/GaInAs MSM PD performance (cutoff frequency and quantum efficiency) as a function of the device parameters. This covers the applied potential, electrode spacing, absorbing layer thickness, and heterojunction effect. We also reported that for millimeter-wave applications we can expect higher operating frequency using an AllnAs / GaInAs MSP PD, whereas we can expect higher quantum efficiency using a GaAs MSM PD. [ABSTRACT FROM AUTHOR]

We present the design and realization of a 1×4 switching matrix, based on an electro-optical directional coupler. This matrix is devoted to true time delay systems. It is characterized by an original topology that reduces global power consumption down to 20 mW. Fiber-to-fiber losses are 15 dB, and the crosstalk is lower than -20 dB. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 18: 243–246, 1998. [ABSTRACT FROM AUTHOR]

We report on the opto-microwave characterization of InP waveguide-coupled to microcavity disk resonators. The lateral waveguide confinement is obtained by deep inductively-coupled plasma reactive-ion etching (ICP-RIE) through the guiding layer. We demonstrate the propagation of microwaves on an optical carrier in this resonant structure, which behaves as an opto-microwave filter or demultiplexer. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 315–317, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20808 [ABSTRACT FROM AUTHOR]

It is shown that local and large lattice mismatch epitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates a long-wavelength metal-semiconductor-metal photodetector, a GaAs MESFET preamplifier, and an inductor. The GaAs / GaInAs heteroepitaxy needed for the photodetector wax selectively grown using a SiO[sub2] mask and the entire circuit was fabricated on a silicon substrate. Compared to a PIN photodiode loaded with a 50-ω resistor, more than 10 dB gain was measured at 7 GHz in a microwave optical link. [ABSTRACT FROM AUTHOR]