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Lead-free Cs3Cu2I5 metal halides have garnered significant attention recently due to their non-toxic properties and deep-blue emission. However, their relatively low photoluminescence quantum efficiency and poor stability have limited their applications. In this work, sodium iodide (NaI) is used to facilitate the synthesis of Cs3Cu2I5 nanocrystals (NCs), demonstrating improved photoluminescence intensity, photoluminescence quantum yield, and stability. Systematic optoelectronic characterizations confirm that Na+ is successfully incorporated into the Cs3Cu2I5 lattice without altering its crystal structure. The improved Photoluminescence Quantum Yield (PLQY) and stability are attributed to the strengthened chemical bonding, which effectively suppresses vacancy defects in the lattice. Additionally, light-emitting diodes (LEDs) based on 10% NaI-doped Cs3Cu2I5 NCs were assembled, emitting vibrant blue light with a maximum radiant intensity of 82 lux and Commission Internationale de l'Eclairage (CIE) chromaticity coordinates of (0.15, 0.1). This work opens new possibilities for commercial lighting display applications. [ABSTRACT FROM AUTHOR]

The protein-protein interaction between menin and mixed lineage leukemia 1 (MLL1) plays a critical role in acute leukemias with translocations of the MLL1 gene or with mutations in the nucleophosmin 1 (NPM1) gene. As a step toward clinical translation of menin-MLL1 inhibitors, we report development of MI-3454, a highly potent and orally bioavailable inhibitor of the menin-MLL1 interaction. MI-3454 profoundly inhibited proliferation and induced differentiation in acute leukemia cells and primary patient samples with MLL1 translocations or NPM1 mutations. When applied as a single agent, MI-3454 induced complete remission or regression of leukemia in mouse models of MLLI-rearranged or NPMI-mutated leukemia, including patient-derived xenograft models, through downregulation of key genes involved in leukemogenesis. We also identified MEIS1 as a potential pharmacodynamic biomarker of treatment response with MI-3454 in leukemia, and demonstrated that this compound is well tolerated and did not impair normal hematopoiesis in mice. Overall, this study demonstrates, for the first time to our knowledge, profound activity of the menin-MLL1 inhibitor as a single agent in clinically relevant PDX models of leukemia. These data provide a strong rationale for clinical translation of MI-3454 or its analogs for leukemia patients with MLL1 rearrangements or NPM1 mutations., Introduction The development of acute leukemia is associated with heterogeneous genetic and epigenetic alterations (1, 2), making it difficult to identify new effective therapies for leukemia patients. Despite these challenges, [...]

Nickel oxide (NiOx) is desirable hole selective material (HSMs) for perovskite photovoltaics because of the characteristic in stability and low cost. However, they deliver limited open‐circuit voltage (VOC) compared to some organic HSMs. As it is known, the performance of perovskite solar cells is predominantly limited by trap‐assisted non‐radiative recombination at the perovskite/hole‐selective layer interfaces. A typical lithium‐doping strategy leads to the valence‐band maximum shift and the electronic levels of NiOx can be tuned robustly to match perovskite active layer in perovskite solar cells. More critically, carrier dynamics studies demonstrate another critical PN4N interlayer strategy reduced interfacial density of defect sites and trap‐assisted recombination. These merits contribute coordinately to lower energy loss across the perovskite/NiOx interface and facilitate charge transport process through the relevant interface, yielding VOC values increase to 1.14 V and power conversion efficiencies over 20%. [ABSTRACT FROM AUTHOR]

Sb2S3 solar cells are lagging behind conventional thin-film solar cells such as silicon solar cells and cadmium telluride solar cells in the power conversion efficiency (PCE). One of the most prominent problems is that the carrier concentration of Sb2S3 is relatively low. In order to increase the carrier concentration, elemental Cu was doped into Sb2S3 film by radio-frequency (RF) magnetron sputtering. We proved that Cu was doped into Sb2S3 films and mainly anchored with sulfur in the form of copper chalcogenide species at the surface and grain boundaries of Sb2S3. The doping of Cu essentially affects the physical and electrical properties of RF-sputtered Sb2S3 films such as the optical band gap, crystallinity, chemical composition, morphology, and carrier concentration. Specially, the electronic carrier concentration is remarkably increased from 6.28 × 109 to 6.06 × 1010 cm−3 and the Fermi level is also significantly uplifted after prudent doping with Cu. Planar solar cells based on RF-sputtered Cu-doped Sb2S3 absorber deliver an increased PCE of 1.13% and show good stability. This research proves that doping of Cu is an alternative and effective way to improve the electronic property of Sb2S3 films and enhance the performance of Sb2S3 solar cells. [ABSTRACT FROM AUTHOR]

A single epitope of Leishmania analog of the receptors for activated C kinase (LACK) from Leishmania major, the polypeptide LACK156–173, is recognized by Vβ4+/Vα8+ T cells, and activate these cells that drives the subsequent T helper (Th)2 response. This study was undertaken to investigate the therapeutic potential of the LACK156–173 epitope in murine autoimmune arthritis models. To explore the influence of the LACK156–173 epitope on murine collagen antibody-induced arthritis, as well as its immunological mechanism, we vaccinated or treated mice with a LACK156–173 epitope expression plasmid or polypeptide. The effect of LACK156–173 epitope was then evaluated by clinical scores, histopathology, and quantitative real-time polymerase chain reaction (qRT-PCR) analysis. Using flow cytometry, we measured the subsets and maturity of CD11c+ dendritic cells (DCs), as well as T cell polarization, in co-culture experiments. We also measured cytokine gene expression and production. The murine macrophage-like cell line RAW264.7 was used to identify the receptor for the epitope. Vaccination or treatment of the mice with the LACK156–173 epitope expression plasmid or polypeptide ameliorated the severity of arthritis. qRT-PCR analysis revealed that the LACK156–173 epitope improved the balance of effector T cells in synovial tissue compared to that in untreated arthritis controls. Toll-like receptor (TLR) 4 expression was diminished by LACK156–173. The epitope also influenced T cell polarization by regulating the differentiation, maturation, and functions of CD11c+ DCs and upregulating Jagged1 ligand expression. Blocking the mannose receptor (MR) significantly attenuated LACK156–173 epitope-induced macrophage activation. Our data indicate that vaccination or treatment with a single microorganism epitope, LACK156–173, is a highly efficient therapy for murine autoimmune arthritis. The therapeutic effects are mediated by the regulation of the differentiation, maturation, and functions of DCs via MR, resulting in the upregulation of Jagged1 expression and Th2 cell polarization. Our results demonstrate the therapeutic potential of the LACK156–173 epitope in rheumatoid arthritis. [ABSTRACT FROM AUTHOR]

Reducing the energy loss and retarding the carrier recombination at the interface are crucial to improve the performance of the perovskite solar cell (PSCs). However, little is known about the recombination mechanism at the interface of anode and SnO2 electron transfer layer (ETL). In this work, an ultrathin wide bandgap dielectric MgO nanolayer is incorporated between SnO2:F (FTO) electrode and SnO2 ETL of planar PSCs, realizing enhanced electron transporting and hole blocking properties. With the use of this electrode modifier, a power conversion efficiency of 18.23% is demonstrated, an 11% increment compared with that without MgO modifier. These improvements are attributed to the better properties of MgO‐modified FTO/SnO2 as compared to FTO/SnO2, such as smoother surface, less FTO surface defects due to MgO passivation, and suppressed electron–hole recombinations. Also, MgO nanolayer with lower valance band minimum level played a better role in hole blocking. When FTO is replaced with Sn‐doped In2O3 (ITO), a higher power conversion efficiency of 18.82% is demonstrated. As a result, the device with the MgO hole‐blocking layer exhibits a remarkable improvement of all J–V parameters. This work presents a new direction to improve the performance of the PSCs based on SnO2 ETL by transparent conductive electrode surface modification. [ABSTRACT FROM AUTHOR]

Perovskite solar cells (PVSCs) have achieved excellent power conversion efficiency (PCE) but still suffer from instability issues. Defect passivation is an important route to simultaneously increase the efficiency and stability of PVSCs. Here, a strategy of incorporating silica oligomer in perovskite films for surface and grain boundary defect passivation is reported. Silica oligomer passivation agent (PA) is in situ formed through hydrolysis and condensation reaction of tetraethyl orthosilicate additive in perovskite precursor. The passivation mechanism is elucidated by density functional theory calculation, revealing stable chelating interaction and hydrogen bond interaction between PA and perovskite. Spectroscopic and electrical characterizations demonstrate that silica oligomer can enlarge grain sizes, prolong carrier lifetime, enhance charge carrier dynamics, and reduce trap state densities in perovskite films. Planar PVSCs with passivation achieve a highly improved PCE of 19.64% with a stabilized efficiency of 18.81%. More importantly, unencapsulated perovskite devices with passivation retain nearly 90% of original efficiency after 1000 h storage under ambient condition and sustained 87% of initial performance after high‐temperature (120 °C) thermal accelerated aging, showing highly enhanced moisture and thermal stability. Therefore, the present study provides a pathway to the future design and optimization of PVSCs with higher efficiency and greater stability. [ABSTRACT FROM AUTHOR]

Inorganic p-type films with high mobility are very important for opto-electronic applications. It is very difficult to synthesize p-type films with a wider, tunable band gap energy and suitable band energy levels. In this research, p-type copper aluminum sulfide (Cu x Al 1- x S y ) films with tunable optical band gap, carrier density, hole mobility and conductivity were first synthesized using a simple, low cost and low temperature chemical bath deposition method. These in situ fabricated Cu x Al 1- x S y films were deposited at 60 °C using an aqueous solution of copper(ii) chloride dihydrate (CuCl 2 ·2H 2 O), aluminium nitrate nonohydrate [Al(NO 3 ) 3 ·9H 2 O], thiourea [(NH 2 ) 2 CS], and ammonium hydroxide, with citric acid as the complexing agent. Upon varying the ratio of the precursor, the band gap of the Cu x Al 1- x S y films can be tuned from 2.63 eV to 4.01 eV. The highest hole mobility obtained was 1.52 cm 2 V -1 s -1 and the best conductivity obtained was 546 S cm -1 . The Cu x Al 1- x S y films were used as a hole transporting layer (HTL) in organic solar cells (OSCs), and a good performance of the OSCs was demonstrated using the Cu x Al 1- x S y films as the HTL. These results demonstrate the remarkable potential of Cu x Al 1- x S y as hole transport material for opto-electronic devices., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

Reducing the energy loss and retarding the carrier recombination at the interface are crucial to improve the performance of the perovskite solar cell (PSCs). However, little is known about the recombination mechanism at the interface of anode and SnO 2 electron transfer layer (ETL). In this work, an ultrathin wide bandgap dielectric MgO nanolayer is incorporated between SnO 2 :F (FTO) electrode and SnO 2 ETL of planar PSCs, realizing enhanced electron transporting and hole blocking properties. With the use of this electrode modifier, a power conversion efficiency of 18.23% is demonstrated, an 11% increment compared with that without MgO modifier. These improvements are attributed to the better properties of MgO-modified FTO/SnO 2 as compared to FTO/SnO 2 , such as smoother surface, less FTO surface defects due to MgO passivation, and suppressed electron-hole recombinations. Also, MgO nanolayer with lower valance band minimum level played a better role in hole blocking. When FTO is replaced with Sn-doped In 2 O 3 (ITO), a higher power conversion efficiency of 18.82% is demonstrated. As a result, the device with the MgO hole-blocking layer exhibits a remarkable improvement of all J-V parameters. This work presents a new direction to improve the performance of the PSCs based on SnO 2 ETL by transparent conductive electrode surface modification.