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Resistive switching memory (RRAM) features many optimal properties for future memory applications that make RRAM a strong candidate for storage-class memory and embedded nonvolatile memory. This paper addresses the cycling-induced degradation of RRAM devices based on a HfO2 switching layer. We show that the cycling degradation results in the decrease of several RRAM parameters, such as the resistance of the low-resistance state, the set voltage V\mathrm{ set} , the reset voltage V\mathrm{ reset} , and others. The degradation with cycling is further attributed to enhanced ion mobility due to defect generation within the active filament area in the RRAM device. A distributed-energy model is developed to simulate the degradation kinetics and support our physical interpretation. This paper provides an efficient methodology to predict device degradation after any arbitrary number of cycles and allows for wear leveling in memory array. [ABSTRACT FROM AUTHOR]

Resistive-switching memory (RRAM) based on metal oxide is currently considered as a possible candidate for future nonvolatile storage and storage-class memory. To explore possible applications of RRAM, the switching variability and the cycling endurance are key issues that must be carefully understood. To this purpose, we studied the switching variability and the endurance in pulsed regime for HfOx-based RRAM. We found that the resistance window, the set/reset variability, and the endurance are all controlled by the maximum voltage Vstop , which is applied during the negative-reset operation. We demonstrate that the endurance failure is triggered by a negative-set event, where the resistance suddenly decreases during the reset. Cycling endurance is studied as a function of time, compliance current and Vstop , allowing to develop an Arrhenius-law model, which is capable of predicting device lifetime under various conditions. [ABSTRACT FROM PUBLISHER]