1. Strain rate-dependent hardness and deformation behavior in the nanocrystalline/amorphous Ti2AlNb film.
- Author
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Zhang, Yu, Chen, JianHong, Sun, GuiXun, Huang, Hao, Tong, LiBo, Wang, MinJuan, Li, Hu, He, Xingjia, He, Xiangling, Zhang, Kan, and Wen, Mao
- Subjects
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STRAINS & stresses (Mechanics) , *HARDNESS , *DEFORMATIONS (Mechanics) , *CRYSTAL grain boundaries , *POLYCRYSTALLINE semiconductors , *DUCTILITY , *INDENTATION (Materials science) - Abstract
Building nanocrystalline/amorphous biphase nanostructure has recently emerged as a new strengthening-toughening route that can combine the strengthening benefits of nanocrystallinity and amorphization. Therefore, it is required exploring on the strain rate-dependent deformation behavior with above different nanostructure in certain system. Herein, three typical nanostructures: polycrystalline, uniform nanocrystalline/amorphous core-shell nanostructure and amorphous matrix with nanoclusters, have been achieved in the sputtered Ti 2 AlNb films by individually regulating the sputtering bias voltage (U bias). Note that a high U bias can promote formation of Nb–rich amorphous tissues via Al preferential resputtering and Nb segregation. Moreover, microstructural evolution and strain rate-dependent hardness and deformation behavior were further explored. Firstly, at a low U bias (−40 V), Ti 2 AlNb film exhibited polycrystalline character; it yielded a relatively low hardness (~10.0 GPa) but a high strain sensitivity coefficient of 0.1505. Subsequently, the novel nanocrystalline/amorphous core-shell nanostructure consisting of Ti 2 AlNb nanocrystalline cores uniformly encapsulated by thin amorphous shells was achieved at a higher U bias (−120 V); this nanostructure provided a remarkable hardness enhancement (~15.2 GPa) without sacrificing its ductility and intermediate strain sensitivity coefficient of 0.1382. Finally, a transition to amorphous matrix with nanoclusters occurred with further increasing U bias to −200 V, thus yielding slight decrease in hardness (~12.5 GPa) and a minimum strain sensitivity coefficient of 0.0915 when shear-band deformation was activated. • High V b can induce Nb segregation to grain boundaries for triggering amorphization in the Ti 2 AlNb films. • The uniform nanocrystalline-amorphous dual-phase structure achieved at V b = −120 V • Vb induced microstructural evolution and strain rate-dependent hardness (H) and deformation behavior were further explored. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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