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• Electrochemical etching-enhanced CMP is proposed for efficient polishing of GaN. • Identical-site observation was conducted to study the etching behaviors of GaN. • A maximum etching rate of 1.462 μm/min has been achieved. • Sa roughness of a dia-lapped GaN surface has been reduced from 69.8 nm to 0.64 nm. An electrochemical etching-enhanced CMP process was proposed to realize the highly efficient and damage-free finishing of GaN. In this process, electrochemical etching was first used to remove the damaged layer induced by grinding or lapping, and CMP was then conducted to flatten the etched surface. The etching rate could reach 1.46 μm/min using NaOH solution as the electrolyte which was highly efficient. It was found that the etching rate and surface roughness can be balanced by adjusting the applied potential. CMP was carried out on an etched GaN sample and the surface roughness was reduced from 69.8 nm to 0.64 nm, and its surface quality was also confirmed to be desirable through photoluminescence. These results demonstrate that the proposed electrochemical etching-enhanced CMP process is highly effective and efficient to obtain a crack-free, damage-free and smooth GaN surface. [ABSTRACT FROM AUTHOR]

For the highly efficient and versatile polishing of metals, isotropic etching polishing (IEP), which is based on the merging of isotropic etching holes, has been developed. In this study, the feasibility and mechanism of isotropic etching polishing of nickel-based superalloy Inconel 718 (IN718) and the polishing characteristics have been studied. The potentiodynamic experiments revealed similar trends of the cathodic, passive, second passivation, and transpassive regions in all the electrolytes, while the corrosion susceptibility of IN718 successively decreased with the increasing H 2 SO 4 concentration in the electrolyte. The etching anisotropy of the IN718 precipitated with different phases can be experimentally transmuted to isotropic etching by modulating the electrolyte concentration and keeping electrolyte temperature equal or above the room temperature. Because of the positive correlation of the etching current with isotropic holes density and diameter, etching at higher currents is promoted for the rapid and proficient polishing. The surface evolution mechanism during IEP has been confirmed. The surface roughness initially increased due to the formation of etching holes, then decreased abruptly owing to the rapid merging of etching holes and finally achieved a smooth surface. The wet grounded surface of IN718 with a roughness of Sa 62.7 nm has been transformed into a mirror-like smooth surface with a roughness of Sa 0.86 nm within 300 s of IEP at optimized conditions and a high MRR of 2.73 mm3/min has been achieved. • Electrochemical-based isotropic etching polishing mechanism of Inconel 718. • Electrolyte concentration and temperature control etching anisotropy of Inconel 718. • Two phase Inconel 718 with MC carbides was polished by isotropic etching polishing. • Inconel 718 surface roughness first increased and then decreased during polishing. • Isotropic etching polishing achieved mirror-like shining Inconel 718 surface. [ABSTRACT FROM AUTHOR]