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Dielectric capacitors prepared by antiferroelectric (AFE) materials have the advantages of large power density and fast discharge ability. It has been a focus on the improvement of the recoverable energy density (Wrec) and discharge energy–density (Wdis) in the AFE ceramics. To address the above issue, optimizing the proportion of components is proposed for enhancing ceramic antiferroelectricity, ultimately improving the breakdown strength (Eb) and Wrec. In this work, an ultrahigh Wrec (14.3 J/cm3) with an excellent energy efficiency (η) of 81.1% is obtained in (Pb0.96Sr0.02La0.02)(Hf0.9Sn0.1)O3 AFE ceramic at electric field of 490 kV/cm, which is the maximum value reported in lead-based AFE ceramics fabricated by the conventional solid-state reaction method so far. The multistage phase transition induced by the electric field is observed in the polarization–electric field (P–E) hysteresis loops. Furthermore, an outstanding power density (PD) of 335 MW/cm3 and an excellent Wdis of 8.97 J/cm3 with a rapid discharge speed (102 ns) are obtained at electric field of 390 kV/cm. In addition, (Pb0.96Sr0.02La0.02)(Hf0.9Sn0.1)O3 ceramics also possess an excellent thermal and frequency stability. These exceptional properties indicate that (Pb0.98−xSrxLa0.02)(Hf0.9Sn0.1)O3 ceramics are a potential candidate for pulsed power devices and power electronic devices. [ABSTRACT FROM AUTHOR]

Na 0.5 Bi 0.5 TiO 3 (NBT) ceramic is a potential dielectric material for the manufacture of high-performance dielectric ceramic capacitors due to its high polarization and environmentally friendly characteristics. In this work, (1– x)(0.70Na 0.5 Bi 0.5 TiO 3 –0.30SrTiO 3)– x Bi(Ni 0.5 Hf 0.5)O 3 (NBST– x BNH) ceramics have been prepared based on the strategy of refining grain size and inducing polar nano-regions (PNRs). As a result, the NBST–0.15BNH ceramic achieved large energy density and efficiency (W rec = 4.11 J/cm3, η = 82.1%) at a low electric field of 240 kV/cm. This performance is outstanding compared to existing reports at similar breakdown electric fields. The introduction of Sr2+ enabled the NBST to have a high relaxation property, and the introduction of BNH induced PNRs, which ensured the high energy storage efficiency of the ceramics. BNH doping refined grain size, which contributed to the large breakdown electric field strength of the ceramics. In addition, stability tests showed that the NBST–0.15BNH ceramic had excellent thermal and frequency stability. The ceramic also demonstrated a fast discharge rate (t 0.9 = 148 ns) in the charge-discharge test. [Display omitted] [ABSTRACT FROM AUTHOR]

Enhancing the availability and reliability of dielectric ceramic energy storage devices is of great importance. In this work, (1- x) Na 0. 5 Bi 0. 5 TiO 3 – x Bi( Mg 0. 5 Hf 0. 5 ) O 3 (NBT– x BMH) lead-free ceramics were created utilizing a solid-state reaction technique. All NBT– x BMH ceramics have a single perovskite structure. With increasing BMH doping, the grain size shrinks drastically, which greatly enhances the breakdown electric field (310 kV/cm at x = 0.25). Additionally, the relaxation behaviors of NBT– x BMH ceramics with high BMH content are more remarkable. Among all designed components, the NBT–0.25BMH ceramic exhibits the best energy storage performance with a high W rec of 4.63 J/ cm 3 and an η of 75.1% at 310 kV/cm. The NBT–0.25BMH ceramic has exceptional resistance to fluctuations in both frequency (5–500 Hz) and temperature (30–100 ∘ C). Charge–discharge test shows that the NBT–0.25BMH ceramic has a quick discharge rate ( t 0. 9 < 110 ns). With these properties, the NBT–0.25BMH ceramic may have applications in microdevices as well as in ultra-high power electronic systems. [ABSTRACT FROM AUTHOR]

• 0.80NN-0.20BNH ceramic achieved large W rec of 6.45 J/cm3 and an η of 82.72 %. • 0.8NN-0.2BNH ceramics displayed high power density (P D = 215 MW/cm3). • 0.8NN-0.2BNH ceramics displayed large current density (C D = 1346 A/cm2). • 0.8NN-0.2BNH ceramics show excellent stability of frequency and temperature. (1- x)NaNbO 3 - x Bi(Ni 0.5 Hf 0.5)O 3 [(1- x)NN- x BNH, x = 0.10, 0.15, 0.20 and 0.25] lead-free ferroelectric ceramics were fabricated via a standard solid-phase reaction method, in order to obtain superior energy storage properties. BNH is introduced into the NN lattice to limit grain growth and improve the breakdown field strength as a second component. As the results indicate, a high W rec of 6.45 J/cm3 and a breakdown field strength (E b) of 380 kV/cm were achieved for the 0.80NN-0.20BNH ceramic, which was dependent on the nonequivalent replacement at the B site. In addition, the ceramics maintain significant stability over a frequency range of 10 Hz to 1000 Hz and temperature intervals from 30 up to 120 °C. Exceptional charge/discharge properties of high power density (P D = 215 MW/cm3) and current density (C D = 1346 A/cm2) along with an ultra-fast discharge rate (54 ns) were acquired. These results demonstrate that the 0.80NN-0.20BNH ceramic is an energy storage material with high potential. [ABSTRACT FROM AUTHOR]