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To realize the damage-free finishing of CVD-SiC substrates, which are used as materials for space telescope mirrors and glass lens molds, plasma chemical vaporization machining (PCVM) and plasma-assisted polishing (PAP) were combined. In this study, the properties of such CVD-SiC substrates, including their surface morphology, composition and crystalline orientation, were investigated. Lapping using diamond abrasives and conventional chemical mechanical polishing (CMP) using CeO 2 slurry were conducted for comparison with the proposed atmospheric-pressure-plasma-based finishing process. Many scratches and a subsurface damage (SSD) layer were formed by the diamond lapping of CVD-SiC. Conventional CMP using CeO 2 slurry was conducted for the damage-free finishing of CVD-SiC. However, the polishing efficiency was very low. In the proposed process, PCVM, which is a noncontact dry etching process, was performed to remove the SSD layer while PAP, which combines plasma modification and soft abrasive polishing, was performed for damage-free surface finishing. PCVM was conducted on a diamond-lapped CVD-SiC surface. After PCVM for a short duration of 5 min, the scratches and SSD layer formed by lapping were completely removed, although the surface roughness was slightly increased. PAP using a resin-bonded CeO 2 grindstone was conducted to decrease the surface roughness of CVD-SiC processed by diamond lapping and PCVM for 5 min, for which a loose-held-type grindstone was demonstrated to be very useful. A flat and scratch-free surface with an rms roughness of 0.6 nm was obtained after PAP finishing. [ABSTRACT FROM AUTHOR]

[Display omitted] • Atomic scale smoothing of GaN is realized by plasma-based atom-selective etching. • Temperature is a key factor in determining the PASE etching mode of GaN. • Sa roughness can be reduced from 135.8 nm to 0.527 nm by 2 min of PASE. • PASE demonstrates an extremely high MRR of 93.01 μm/min. Plasma-based atom-selective etching (PASE) of GaN is conducted to realize the highly efficient planarization of the GaN surface. Inductively coupled plasma with high temperature and high concentration of radicals is used as the source of PASE. The non-toxic carbon tetrafluoride is chosen over chlorine as the reaction gas, and the volatility of the etching products will be improved at high temperatures in the PASE of GaN. After 2 min of PASE, the GaN surface roughness is reduced from Sa 135.8 nm to Sa 0.527 nm. The material removal rate of PASE of GaN is measured to be 93.01 μm/min, thousands of times higher than that of the conventional chemical mechanical polishing method. The crystal structure of the GaN subsurface is well-ordered without any damage or defects. PASE is thus proven to be a non-destructive etching method. In this study, the effects of radio frequency power and reaction gas flow rate on PASE are also investigated. Surface temperature and concentration of radicals are found to be the critical factors in the PASE of GaN. [ABSTRACT FROM AUTHOR]

To realize the damage-free, highly efficient, and atomic-level polishing of single-crystal Si, plasma-based atom-selective etching (PASE) is proposed in this study as a generic polishing approach for Si wafers. The polishing effect of PASE is realized through the selective removal of Si atoms with more dangling bonds under high temperature. Plasma diagnostics are carried out to investigate the radical composition, the density of plasma, and the etching temperature. The key parameters of PASE are optimized, and the PASE of Si (100) with a material removal rate greater than 0.7 μm/min was realized. A ground Si (100) surface can be quickly smoothed by PASE, with the Sa roughness being reduced from 195 nm to below 1.0 nm within 5 min, and the polished surface is proven to be crystallographically perfect. The PASE of (110)- and (111)-oriented Si wafers is also proven effective, demonstrating that PASE is a generic polishing approach for Si regardless of orientation. The entire surface flattening of a 2-inch Si wafer was carried out by numerically controlled PASE, and the wafer flatness was reduced from 37.29 μm to 4.92 μm through optimized scanning conditions. Overall, this study has shown that PASE is a promising approach for high-efficiency and high-quality polishing of Si. Image 1 • Plasma-based atom-selective etching (PASE) was proposed as a Si polishing technique. • Inductively coupled plasma with high radical density and high temperature was utilized. • Sa roughness of Si was reduced from 195 to 0.71 nm with a maximum MRR of 0.7 μm/min. • Temperature played a key role in PASE to determine the polishing effect. • PASE was effective for (100)-, (110)-, and (111)-oriented Si wafers. [ABSTRACT FROM AUTHOR]