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Flexible perovskite light‐emitting diodes (LEDs) have been highly expected to realize advanced wearable optoelectronic applications due to the excellent optoelectronic properties of perovskites. However, the poor water and oxygen stability and limited flexibility of perovskites prevent their commercialization and applications in flexible LEDs. Herein, the low‐cost and green biomass materials‐ethyl cellulose (EC) is added in the CsPbI3 nanocrystals (NCs), acting as a cross‐linker between neighboring halide octahedra through hydrogen bonds and PbO coordination bonds. It reduces the defect densities of NCs, leading to improved photoluminescence quantum yield. Simultaneously, the synergistic effect of efficient defect passivation and hydrophobic ether groups of EC significantly improve the environment stability of NCs. Additionally, the favorable flexibility of EC and cross‐linking between EC and perovskite NCs improve the deformation resistance of the perovskite layer with stable photoluminescence and negligible cracks after repeated bending. Consequently, flexible LEDs based on the EC‐passivated CsPbI3 NCs achieved a record external quantum efficiency of 12.1% and significantly enhanced operational stability. Moreover, the flexible LEDs show small luminance degradation after bending for 1000 cycles at a radius of 3 mm, and still retain high performance even after repeatedly bending at an ultrasmall bending radius of 1 mm. [ABSTRACT FROM AUTHOR]

2D transition metal carbides, nitrides, and carbonitrides called MXenes show outstanding performance in many applications due to their superior physical and chemical properties. Herein, a ZnO–MXene mixture with different contents of Ti3C2 is applied as electron transport layers (ETLs) and the influence of the Ti3C2 MXene in all‐inorganic metal halide perovskite nanocrystal light‐emitting diodes (perovskite NC LEDs) is explored. The addition of Ti3C2 makes more balanced charge carrier transport in LEDs by changing the energy level structure and electron mobility of ETL. Moreover, lower surface roughness is obtained for the ETL, thus guaranteeing uniform distribution of the perovskite NCs layer and further reducing leakage current. As a result, a 17.4% external quantum efficiency (EQE) with low efficiency roll‐off is achieved with 10% Ti3C2, which is a 22.5% improvement compared to LEDs without Ti3C2. [ABSTRACT FROM AUTHOR]

The external quantum efficiencies (EQEs) of perovskite quantum dot light‐emitting diodes (QD‐LEDs) are close to the out‐coupling efficiency limitation. However, these high‐performance QD‐LEDs still suffer from a serious issue of efficiency roll‐off at high current density. More injected carriers produce photons less efficiently, strongly suggesting the variation of ratio between radiative and non‐radiative recombination. An approach is proposed to balance the carrier distribution and achieve high EQE at high current density. The average interdot distance between QDs is reduced and this facilitates carrier transport in QD films and thus electrons and holes have a balanced distribution in QD layers. Such encouraging results augment the proportion of radiative recombination, make devices with peak EQE of 12.7%, and present a great device performance at high current density with an EQE roll‐off of 11% at 500 mA cm−2 (the lowest roll‐off known so far) where the EQE is still over 11%. [ABSTRACT FROM AUTHOR]

[Display omitted] • The PLQYs of CsCdBr 3 NRs are improved from ~0 to 57% by PbBr 2 doping. • The optimized perovskite NRs show pure-blue emission located at 459 nm. • The optimized NRs based LEDs achieved the maximum brightness of 225 cd m−2. One-dimensional (1D) semiconductor nanorods (NRs) are very promising materials for light-emitting diodes (LEDs) due to their unique optoelectronic properties, while the research on 1D perovskite NRs is relatively rare. Herein, the 1D CsCdBr 3 perovskite NRs were synthesized by simple thermal injection method, in which the [CdX 6 ]4- octahedra sharing opposite faces can form infinite linear chains along the c axis. But their low photoluminescence quantum yields (PL QYs) limit their application in LEDs. To improve the optoelectronic properties of CsCdBr 3 NRs, the PbBr 2 is chosen as the dopant to synthesize the Pb2+ doped CsCdBr 3 perovskite NRs. When the molar ratio of PbBr 2 :CdBr 2 is 0.25, the perovskite NRs with the PL QYs of 48% and pure-blue emission centered at 459 nm were obtained. Furthermore, the optimized NRs were used as the emissive layer to fabricate a perovskite LED that is the only one blue perovskite LED based on 1D NRs. This device shows bright pure-blue emission with good spectral stability, suggesting that the 1D perovskite NRs are good choice to achieve next-generation lighting and display. [ABSTRACT FROM AUTHOR]

• OPA improved the PL QY and enhanced the electrical conductivity of CsPbI 3 QDs. • Top-emitting device structure improved the light extraction efficiency of LEDs. • OPA-optimized CsPbI 3 QD LEDs achieved 10171 cd m−2 luminance and 12.6% EQE. All-inorganic CsPbX 3 (X = Cl, Br, I) quantum dots (QDs) are promising materials for light-emitting diodes (LEDs), but the long insulating ligands such as oleic acid (OA) and oleylamine (OLA) on the QD surface limit the device performances. They reduce the electrical conductivity of QDs, while their loss deteriorates the photoluminescence and stability. To overcome these issues, octylphosphonic acid (OPA) with a shorter carbon chain was added in the synthesis of perovskite QDs to partially replace OA ligands. Owing to the strong interaction between OPA and Pb atoms, the under-coordinated Pb atoms on the surface of CsPbI 3 QDs can be effectively passivated by OPA, leading to improved fluorescence quantum efficiency (close to unity) and solution stability. Furthermore, the electrical conductivity of QD films was also enhanced from 5.3 × 10−4 to 1.1 × 10−3 S/m by using shorter chain OPA ligands. Finally, highly efficient red perovskite QD LEDs with peak external quantum efficiency (EQE) of 12.6% and maximum luminance of 10171 cd m−2 were achieved in a top-emitting device structure, a nearly 3-fold enhancement in luminance compared with pristine CsPbI 3 QDs based LEDs. [ABSTRACT FROM AUTHOR]

Ruddlesden–Popper perovskites with a formula of (A′)2(A)n−1BnX3n+1 have recently gained widespread interest as candidates for the next generation of optoelectronic devices. The variations of organic cation, metal halide, and the number of layers in the structure lead to the change of crystal structures and properties for different optoelectronic applications. Herein, the different synthetic methods for 2D perovskite crystals and thin films are summarized and compared. The optoelectronic properties and the charge transfer process in the devices are also delved, in particular, for light‐emitting diodes and solar cells. [ABSTRACT FROM AUTHOR]

As the requirements and expectation for displays in society are growing, higher standards of the display technology are proposed, including wider color gamut, higher color purity, and higher resolution. The recent emergence of light‐emitting halide perovskites has come with numerous advantages, such as high charge‐carrier mobility, tunable emission wavelength, narrow emission linewidth, and intrinsically high photoluminescence quantum yield. Recent advancement of perovskite‐based light‐emitting diodes (PeLEDs) as a promising technology for next‐generation displays is reviewed. Here, how the attractive optical and electrical properties of perovskite materials can be translated into high PeLED performance are discussed, and working mechanisms and optimization approaches of both perovskite materials and the respective devices are analyzed. On the material side this includes the control of size and composition of perovskites grains and nanocrystals, surface and interface passivation, doping and alloying, while on the device side this includes the interfacial engineering and energy level adjustments, and photon emission enhancement. Several challenges such as performance of blue PeLEDs, the environmental and operational stability of PeLEDs, and the toxicity issues of lead halide perovskites are discussed, and perspectives on future developments of perovskite materials and PeLEDs for the display technology are offered. [ABSTRACT FROM AUTHOR]