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Graphene lateral spin valves (LSVs) are promising devices for future memory and magnetic field sensing applications. In this article, we study the dependence of the nonlocal spin resistance, $\Delta {R}_{{\text {NL}}}$ , and the baseline resistance, ${R}_{{\text {BS}}}$ , as a function of the graphene channel width, ${W}$. The scaling trend is quantitatively assessed by using graphene deposited by chemical vapor deposition, which provides a large number of devices with consistent performance. As ${W}$ is scaled from 10 to $0.5~\mu \text{m}$ , the change in $\Delta {R}_{{\text {NL}}}$ matches the theory of contact-induced spin relaxation with a current spin polarization of 3%–5% and a spin diffusion length of $\lambda _{s} = 1.5$ – $2.5~\mu \text{m}$. We also observe a systematic and dramatic decrease in ${R}_{{\text {BS}}}$ , which we attribute to the reduction in charge current spreading. However, we find in the narrowest devices that a small ${R}_{{\text {BS}}}$ remains that arises due to thermoelectric effects, and this trend is confirmed using gate voltage- and charge current-dependent analyses. Finally, we introduce a nonideality factor, ${m} = \vert {R}_{{\text {BS}}} / \Delta {R}_{{\text {NL}}}\vert $ , as a figure of merit to describe the suppression of the baseline relative to the spin signal. In an LSV with ${L} = {1.5}\,\,\mu \text{m}$ , ${W} = {0.5}\,\,\mu \text{m}$ , and n-type conduction, the nonideality factor is as low as ${m} = {0.0252}\,\,\pm \,\,0.0202$ at room temperature showing that nearly ideal bipolar and symmetric spin signals can be achieved in graphene LSVs. [ABSTRACT FROM AUTHOR]

An ac small signal model for lateral spin valves (LSVs) is developed, and is applied to two different types of devices: spin transmitters and magnetic field sensors. The small signal models explicitly decouple the charge- and spin-dependent components, which describe the intrinsic RC delay and the ac spin accumulation dynamics, separately. The analysis is applied to graphene LSVs as an example to illustrate the optimization strategies for LSV devices. By using the charge-spin circuit model, the scattering parameters and the reflection coefficients at the output terminals are quantitatively calculated as a function of frequency. This model can be used as a guide for future LSV design and to benchmark performance across different material systems. [ABSTRACT FROM AUTHOR]