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Diffusion-driven instabilities with pattern formation may occur in a network of identical, regularly-spaced, and resistively-coupled cells if and only if the uncoupled cell is poised on a locally-active and stable operating point in the Edge of Chaos domain. This manuscript presents the simplest ever-reported two-cell neural network, combining together only 7 two-terminal components, namely 2 batteries, 3 resistors, and 2 volatile NbOx memristive threshold switches from NaMLab, and subject to diffusion-driven instabilities with the concurrent emergence of Turing patterns. Very remarkably, this is the first time an homogeneous cellular medium, with no other dynamic element than 2 locally-active memristors, hence the attribute all-memristor coined to address it in this paper, is found to support complex phenomena. The destabilization of the homogeneous solution occurs in this second-order two-cell array if and only if the uncoupled cell circuit parameters are chosen from the Edge of Chaos domain. A deep circuit- and system-theoretic investigation, including linearization analysis and phase portrait investigation, provides a comprehensive picture for the local and global dynamics of the bio-inspired network, revealing how a theory-assisted approach may guide circuit design with inherently non-linear memristive devices. [ABSTRACT FROM AUTHOR]

No isolated system may ever support complexity. Emergent phenomena may however appear in an open system, if, as established by the Edge of Chaos theory, some of its constitutive elements feature the capability to amplify infinitesimal fluctuations in energy, provided an external source supplies them with a sufficient amount of DC power, which is known to be a signature for locally-active behaviour. In particular, complex behaviours, including static and dynamic pattern formation, may emerge in arrays of identical diffusively-coupled cells, if and only if the basic unit is poised on a particular sub-domain of the Local Activity regime, referred to as Edge of Chaos, within which a quiet state hides in fact a high degree of excitability. Here we show, for the first time, that these counterintuitive phenomena may emerge in a basic memristor cellular neural network, consisting of two identical diffusively-coupled second-order cells. The proposed bio-inspired array represents the simplest ever-reported open system, which reproduces the shocking phenomenon, reported by Smale in 1974, when, while studying a model from cellular biology, he observed two identical reaction cells, “mathematically dead” on their own, pulsating together upon diffusive coupling. Impressively, the bio-inspired two-cell reaction-diffusion network contains only nine circuit elements, specifically two DC voltage sources, three linear resistors, two linear capacitors, and two functional niobium oxide (NbO) memristors from NaMLab. Applying the theory of Local Activity to an accurate model of the memristor oscillator, a comprehensive picture for its local and global dynamics may be drawn, providing a systematic method to tune the design parameters of the two-cell array to enable diffusion-driven instabilities therein. [ABSTRACT FROM AUTHOR]

We present a compact, continuous, and numerically stable version of a tantalum oxide (TaOx) memristor model which can be employed for robust and reliable simulations of large scale memristor based circuits. The original model contains a piecewise differentiable function in the memductance expression and discontinuous step functions in the state equation. Additionally, the original model does not set a proper upper bound for the state variable and may admit blowing up solutions due to an exponential power term, preventing the use of it for numerically reliable simulations. Considering these drawbacks, we modify the original model so as to i) simplify the memductance function while removing its piecewise differentiable nonlinearity, ii) include a proper window function for the ON state dynamics, which is missing in the original model, iii) modify and bound the exponential power term to prevent an uncontrollable blow-up of the solutions, and iv) apply a process called unification, allowing us to remove the step functions inherent in the model, which is a novelty in state-limited memristor models. We validate the accuracy of the proposed model via DC and transient simulations, dynamic route map analysis and a Spice implementation of an anti-series configuration, showing the applicability of the model. [ABSTRACT FROM AUTHOR]

This paper presents a circuit-theoretic analysis of a NbO2-Mott memristor fabricated at Hewlett-Packard Labs. It investigates mechanisms behind the origin of complexity based on local activity, which characterizes the behavior of this outstanding nanodevice. We propose an accurate, particularly simplified version of a recently introduced physical model suitable for large-scale circuit simulations. Following the concept of local activity, we then conduct a small-signal circuit-theoretic derivation of the impedance and associated small-signal equivalent circuit elements to analyze device stability and frequency response. Finally, our analysis reveals locally active operating regions, as well as regions where the device dynamics are positioned on the edge of chaos. The latter regions are crucial for designing bio-inspired computing systems. [ABSTRACT FROM AUTHOR]

We present and experimentally validate two minimal compact memristive models for spiking neuronal signal generation using commercially available low-cost components. The first neuron model is called the Memristive Integrate-and-Fire (MIF) model, for neuronal signaling with two voltage levels: the spike-peak, and the rest-potential. The second model MIF2 is also presented, which promotes local adaptation by accounting for a third refractory voltage level during hyperpolarization. We show both compact models are minimal in terms of the number of circuit elements and integration area. Using the MIF and MIF2 models, we postulate the design of a memristive solid-state brain with an estimation of its surface area and power consumption. Analytical projections show that a memristive solid-state brain could be realized within (i) the surface area of the median human brain, 2,400cm2, (ii) the same volume of the median human brain, and (iii) a total power budget of approximately 20 W using a 3.5 nm technology. Distinct from the past decade of memristive neuron literature, our benchmarks are attained using generic commercially available memristors that are reproducible using off-the-shelf components. We expect this work can promote more experimental demonstrations of memristive circuits that do not rely on prohibitively expensive fabrication processes. [ABSTRACT FROM AUTHOR]

This work elucidates some aspects of the nonlinear dynamics of a thermally-activated locally-active memristor based on a micro-structure consisting of a bi-layer of Nb2O5 and Nb2Ox materials. Through application of techniques from the theory of nonlinear dynamics to an accurate and simple mathematical model for the device, we gained a deep insight into the mechanisms at the origin of the emergence of local activity in the memristor. This theoretical study sets a general constraint on the biasing arrangement for the stabilization of the negative differential resistance effect in locally active memristors and provides a theoretical justification for an unexplained phenomenon observed at HP labs. As proof-of-principle, the constraint was used to enable a memristor to induce sustained oscillations in a one port cell. The capability of the oscillatory cell to amplify infinitesimal fluctuations of energy was theoretically and experimentally proved. [ABSTRACT FROM AUTHOR]