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In the memristive version of a standard space-invariant Cellular Nonlinear Network, each cell accommodates one first-order non-volatile memristor in parallel with a capacitor. In case, the resistance switching memory may only undergo almost-instantaneous switching transitions between two possible resistive states, acting at any time, as either the on or the off resistor, the processing elements effectively operate as first-order dynamical systems, and the classical Dynamic Route Map technique may be applied to investigate their operating principles. On the contrary, in case the memristors experience smooth conductance changes, as the bioinspired array implements memcomputing paradigms, each cell truly behaves as a second-order dynamical system. The recent extension of the Dynamic Route Map analysis tool to systems with two degrees of freedom constitutes a powerful technique to investigate the nonlinear dynamics of memristive cellular networks in these scenarios. This paper exploits this system-theoretic technique, called Second-Order Dynamic Route Map, to introduce a novel systematic procedure to design memristive arrays, in which a given memcomputing task is executed by ensuring that, depending upon the network inputs and initial conditions, the analogue dynamic routes of the states of the processing elements, namely capacitor voltages and memristor states, asymptotically converge toward pre-defined stable equilibria. [ABSTRACT FROM AUTHOR]

This paper presents the theory of a novel memcomputing paradigm based upon a memristive version of standard Cellular Nonlinear Networks. The insertion of a nonvolatile memristor in the circuit of each cell endows the dynamic array with the capability to store and retrieve data into and from the resistance switching memories, obviating the current need for extra memory blocks. Choosing the parameters of each cell circuit so that the memristors may undergo solely sharp transitions between two states, each processing element may be approximately described at any time as one of two first-order systems. Under this assumption, the classical Dynamic Route Map may be employed to synthesise and analyse the data storage and retrieval genes. A new system-theoretic methodology, called Second-Order Dynamic Route Map, is also introduced for the first time in this paper. This technique allows to study the operating principles of arrays with second-order processing elements, as is the case, in the proposed network, if the set up of cell circuit parameters induces analogue memristive dynamics. This paper shows how the novel tool may be adopted to investigate the operating mechanisms of a cellular array with second-order cells, which compute the element-wise logical OR between two binary images. [ABSTRACT FROM AUTHOR]

This work presents a detailed study of the nonlinear dynamics of a tantalum oxide memristor recently fabricated at Hewlett Packard Labs. Our investigations uncover direct current, quasi-static, and alternating current behavior of the nanodevice. A thorough study of the dynamics emerging in the nanoscale element under various input/initial condition combinations reveals a fundamental property of the tantalum oxide device, which was unnoticed so far. The initial condition has no effect on the steady-state operation of the memristor under non-zero input. This property, known as fading memory in system theory, implies the uniqueness of asymptotic behavior of the memristor. The progressive input-induced memory erase phenomenon is solely determined by the switching dynamics of the nanodevice, mathematically described by the state evolution function, which governs the rate of evolution of the memristor state. A constant-sign DC input will activate on or off switching dynamics only. Consequently, due to the limited on/off memductance ratio, the memristor will asymptotically attain a fully-conducting or highly-resistive state, irrespective of the initial condition. Most interestingly, under AC periodic excitations, it is the pronounced asymmetry in the state dependence of on and off switching processes which is at the basis of the reported history erase effect. It is important to point out that this novel fading memory phenomenon does not compromise the nonvolatile behavior of the nanostructure. In fact, despite the device may be stimulated so as to forget its past history, it still has a continuum of analog nonvolatile memory states. [ABSTRACT FROM PUBLISHER]

Diffusion-driven instabilities with pattern formation may occur in a network of identical, regularly-spaced, and resistively-coupled cells if and only if the uncoupled cell is poised on a locally-active and stable operating point in the Edge of Chaos domain. This manuscript presents the simplest ever-reported two-cell neural network, combining together only 7 two-terminal components, namely 2 batteries, 3 resistors, and 2 volatile NbOx memristive threshold switches from NaMLab, and subject to diffusion-driven instabilities with the concurrent emergence of Turing patterns. Very remarkably, this is the first time an homogeneous cellular medium, with no other dynamic element than 2 locally-active memristors, hence the attribute all-memristor coined to address it in this paper, is found to support complex phenomena. The destabilization of the homogeneous solution occurs in this second-order two-cell array if and only if the uncoupled cell circuit parameters are chosen from the Edge of Chaos domain. A deep circuit- and system-theoretic investigation, including linearization analysis and phase portrait investigation, provides a comprehensive picture for the local and global dynamics of the bio-inspired network, revealing how a theory-assisted approach may guide circuit design with inherently non-linear memristive devices. [ABSTRACT FROM AUTHOR]

No isolated system may ever support complexity. Emergent phenomena may however appear in an open system, if, as established by the Edge of Chaos theory, some of its constitutive elements feature the capability to amplify infinitesimal fluctuations in energy, provided an external source supplies them with a sufficient amount of DC power, which is known to be a signature for locally-active behaviour. In particular, complex behaviours, including static and dynamic pattern formation, may emerge in arrays of identical diffusively-coupled cells, if and only if the basic unit is poised on a particular sub-domain of the Local Activity regime, referred to as Edge of Chaos, within which a quiet state hides in fact a high degree of excitability. Here we show, for the first time, that these counterintuitive phenomena may emerge in a basic memristor cellular neural network, consisting of two identical diffusively-coupled second-order cells. The proposed bio-inspired array represents the simplest ever-reported open system, which reproduces the shocking phenomenon, reported by Smale in 1974, when, while studying a model from cellular biology, he observed two identical reaction cells, “mathematically dead” on their own, pulsating together upon diffusive coupling. Impressively, the bio-inspired two-cell reaction-diffusion network contains only nine circuit elements, specifically two DC voltage sources, three linear resistors, two linear capacitors, and two functional niobium oxide (NbO) memristors from NaMLab. Applying the theory of Local Activity to an accurate model of the memristor oscillator, a comprehensive picture for its local and global dynamics may be drawn, providing a systematic method to tune the design parameters of the two-cell array to enable diffusion-driven instabilities therein. [ABSTRACT FROM AUTHOR]

In this paper, we present a compact memristor model for bipolar neuromorphic ReRAM devices. The proposed model focuses on the high level description of the device, and it reproduces some of the most important characteristics (i.e. conductance, energy dissipation) without needing a detailed electrical simulation. Its functionality is shown by using it to model the behavior of three different ReRAM devices that were fabricated and measured at the CNR-IMM, MDM Laboratory. The parameters extraction procedure is also discussed. The obtained results clearly show that the model proposed in this paper is able to capture the influence of the programming pulse parameters (i.e. pulse duration and height) changes. This is accomplished by the introduction of a parameter, which is related to the specific device technology. [ABSTRACT FROM AUTHOR]

The main focus of this paper is the presentation of reliable methods for the determination of the optimum coloring of a graph, commonly known in the literature as vertex coloring problem. It has been shown that networks of capacitively coupled oscillators can be used to solve vertex coloring problems. In this paper we address the negative impact of an unbalanced number of couplings for the oscillators on the performance of the network and compensate for this non-uniform coupling structure by an adjustment in the network itself. The negative effect of the memristor device-to-device variability of the NbOx memristor on the array functionality will be investigated and reduced via an adaptation of the memristor operating point. The main improvement in network performance is achieved by setting up a control procedure allowing the network to bypass the local solutions and converge to the global one. Two strategies inspired by global optimization algorithms will be proposed to allow the network to overcome sub-optimal solutions, and find the solution corresponding to the absolute minimum of a performance measure function of the vertex coloring problem. [ABSTRACT FROM AUTHOR]

If the memristor, used in each cell of a memristive variant of the standard space-invariant Cellular Nonlinear Network (CNN), undergoes analogue memductance changes, the processing element operates as a second-order system. The Dynamic Route Map (DRM) technique, applicable to investigate first-order systems only, is no longer relevant. In this manuscript, a recently introduced methodology, generalizing the DRM technique to second-order systems, is applied to the models of Memristor CNN (M-CNN) cells, accomodating dynamic memristors. This allows to gain insights into the operating principles of these cellular structures, which make computations through the evolution of their states toward prescribed equilibria. Our analysis uncovers all possible local and global phenomena, which may emerge in the cell phase space under zero offset current for any self-feedback synaptic weight. Under these hypotheses, the dynamics of the M-CNN cell may significantly differ from those of a standard space-invariant CNN counterpart. The insertion of an offset current into each cell endows it with further properties, including monostability. The analysis method is used to demonstrate how a non-autonomous memristive array exploits the capability of its cells to feature monostability or bistability, depending upon the respective offset currents, to compute the element-wise logical AND between two binary images. [ABSTRACT FROM AUTHOR]

The main focus of this paper is the evolution of complex behavior in a system of coupled nonlinear memristor circuits depending on the applied coupling conditions. Thereby, the parameter space for the local activity and the edge-of-chaos domain will be determined to enable the emergence of the pattern formation in locally coupled cells according to Chua’s principle. Each cell includes a Niobium oxide-based memristor, which may feature a locally active behavior once it is suitably biased on the negative differential resistance region of its DC current-voltage characteristic. It will be shown that there exists a domain of parameters under which each uncoupled cell may become locally active around a stable bias state. More specifically, under these conditions, the coupled cells are on the edge-of-chaos, and can support the static and dynamic pattern formation. The emergence of such complex spatio-temporal behavior in homogeneous structures is a prerequisite for information processing. The theoretical results are confirmed by measurements as well as by the numerical simulations of the accurate device and circuit models. [ABSTRACT FROM AUTHOR]

We present a compact, continuous, and numerically stable version of a tantalum oxide (TaOx) memristor model which can be employed for robust and reliable simulations of large scale memristor based circuits. The original model contains a piecewise differentiable function in the memductance expression and discontinuous step functions in the state equation. Additionally, the original model does not set a proper upper bound for the state variable and may admit blowing up solutions due to an exponential power term, preventing the use of it for numerically reliable simulations. Considering these drawbacks, we modify the original model so as to i) simplify the memductance function while removing its piecewise differentiable nonlinearity, ii) include a proper window function for the ON state dynamics, which is missing in the original model, iii) modify and bound the exponential power term to prevent an uncontrollable blow-up of the solutions, and iv) apply a process called unification, allowing us to remove the step functions inherent in the model, which is a novelty in state-limited memristor models. We validate the accuracy of the proposed model via DC and transient simulations, dynamic route map analysis and a Spice implementation of an anti-series configuration, showing the applicability of the model. [ABSTRACT FROM AUTHOR]

This paper presents a circuit-theoretic analysis of a NbO2-Mott memristor fabricated at Hewlett-Packard Labs. It investigates mechanisms behind the origin of complexity based on local activity, which characterizes the behavior of this outstanding nanodevice. We propose an accurate, particularly simplified version of a recently introduced physical model suitable for large-scale circuit simulations. Following the concept of local activity, we then conduct a small-signal circuit-theoretic derivation of the impedance and associated small-signal equivalent circuit elements to analyze device stability and frequency response. Finally, our analysis reveals locally active operating regions, as well as regions where the device dynamics are positioned on the edge of chaos. The latter regions are crucial for designing bio-inspired computing systems. [ABSTRACT FROM AUTHOR]

We present and experimentally validate two minimal compact memristive models for spiking neuronal signal generation using commercially available low-cost components. The first neuron model is called the Memristive Integrate-and-Fire (MIF) model, for neuronal signaling with two voltage levels: the spike-peak, and the rest-potential. The second model MIF2 is also presented, which promotes local adaptation by accounting for a third refractory voltage level during hyperpolarization. We show both compact models are minimal in terms of the number of circuit elements and integration area. Using the MIF and MIF2 models, we postulate the design of a memristive solid-state brain with an estimation of its surface area and power consumption. Analytical projections show that a memristive solid-state brain could be realized within (i) the surface area of the median human brain, 2,400cm2, (ii) the same volume of the median human brain, and (iii) a total power budget of approximately 20 W using a 3.5 nm technology. Distinct from the past decade of memristive neuron literature, our benchmarks are attained using generic commercially available memristors that are reproducible using off-the-shelf components. We expect this work can promote more experimental demonstrations of memristive circuits that do not rely on prohibitively expensive fabrication processes. [ABSTRACT FROM AUTHOR]

This paper aims to provide some insight into the mechanisms underlying the emergence of synchronization between two memristor-coupled Hindmarsh–Rose oscillatory neural cells. Extensive numerical investigations show that in some cases the history of the nonlinear dynamics of the memristor plays a key role in the development of synchronous oscillations in the network. In fact, an equivalent diffusive network, lacking the plasticity properties featured by the memristor-based synaptic coupling, fails to lock into synchronization under the same simulation settings. These results are then confirmed by a deep theoretical analysis based on the contraction mapping theory. This work sheds light on some aspects of the nonlinear behavior of the still largely unexplored memristor, which is doomed to make a revolutionary impact in integrated circuit design in the years to come. [ABSTRACT FROM AUTHOR]

Random telegraph noise (RTN) owns its very name to its assumed stochastic nature. In this paper, we follow up previous works that questioned this stochastic nature, and we investigate this assumption using experimentally measured noise coming from properly biased Ni/HfO 2 unipolar Resistive RAM memristor nanodevices. We have used established, well–known tools from nonlinear theory to examine the current–noise temporal series. Evaluation results show that this series appears to exhibit not a stochastic, but a deterministic chaotic behavior, also demostrating interesting fractal characteristics in 2D and 3D phase space projections. The presented results clearly advocate for a strong component of complex (chaotic) fluctuation of deterministic origin, instead of a typical (fully stochastic) RTN. This result could pave the path for an enhanced understanding of the mechanisms behind RTN emergence, as well as improve its noise models. • We have analyzed experimental time series RTN from Ni/HfO 2 unipolar Resistive RAM memristor nanodevices. • Established nonlinear dynamics evaluation tools have been utilized in order to characterize • The recorded RTN has been proved to be deterministic chaotic, possessing a fractal structure. • The studied nanodevice dynamics can embedded in a 5-dimensional phase space. [ABSTRACT FROM AUTHOR]

This work elucidates some aspects of the nonlinear dynamics of a thermally-activated locally-active memristor based on a micro-structure consisting of a bi-layer of Nb2O5 and Nb2Ox materials. Through application of techniques from the theory of nonlinear dynamics to an accurate and simple mathematical model for the device, we gained a deep insight into the mechanisms at the origin of the emergence of local activity in the memristor. This theoretical study sets a general constraint on the biasing arrangement for the stabilization of the negative differential resistance effect in locally active memristors and provides a theoretical justification for an unexplained phenomenon observed at HP labs. As proof-of-principle, the constraint was used to enable a memristor to induce sustained oscillations in a one port cell. The capability of the oscillatory cell to amplify infinitesimal fluctuations of energy was theoretically and experimentally proved. [ABSTRACT FROM AUTHOR]