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Your search keyword '"Chen, Lidong"' showing total 4 results
4 results on '"Chen, Lidong"'

1. Microstructure and contact resistivity of (Bi, Sb)2Te3/Sb interface.

Author

Li, Fei, Huang, Xiangyang, Jiang, Wan, and Chen, Lidong

Subjects
MICROSTRUCTURE, ELECTRICAL resistivity, TELLURIDES, ANTIMONY, SEMICONDUCTOR junctions, THERMOELECTRICITY, MICROFABRICATION, SINTERING
Abstract

Thermoelectric joint composed of Bi0.5Sb1.5Te3 (BiSbTe) material and antimony (Sb) metallic interlayer was fabricated by Spark Plasma Sintering. The reliability of the joints was investigated by interfacial microstructure evolution using electron probe micro-analysis for the samples with different accelerated isothermal aging time. After aging for 30 days in vacuum, the thickness of diffusion layer is about 50 μm. Sb2Te3 was identified to be the major interfacial compound. The contact resistivity, depending on the thickness of interfacial compound, is 3 × 10-6 ohm cm2 before aging and increases to 8.5 × 10-6 ohm cm2 after aging for 30 days. The contact resistivity of thermoelectric material/Sb interface is very small as compared to that of solder alloys as interlayer. This study provides a new interlayer-Sb to be used in the bismuth telluride based thermoelectric module. [ABSTRACT FROM AUTHOR]

Published
2012
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2. Direct tuning of electrical properties in nano-structured Bi2Se0.3Te2.7by reversible electrochemical lithium reactionsElectronic supplementary information (ESI) available. See DOI: 10.1039/c1cc15498b.

Author

Chen, Jikun, Zhou, Xiaoyuan, Snyder, G. Jeffrey, Uher, Ctirad, Chen, Nuofu, Wen, Zhaoyin, Jin, Jun, Dong, Hongliang, Qiu, Pengfei, Zhou, Yanfei, Shi, Xun, and Chen, Lidong

Subjects
ELECTRIC properties of crystals, NANOSTRUCTURED materials, BISMUTH compounds, ELECTROCHEMICAL analysis, CHEMICAL reactions, CLATHRATE compounds, MICROFABRICATION, THERMOELECTRICITY
Abstract

Lithium intercalation and de-intercalation processes have been used to fabricate bulk Bi2Se0.3Te2.7with internal nanostructures. The doped Li content can be precisely controlled through this method. It provides a chance to directly optimize electrical properties when preparing nano-structured materials, leading to the optimum carrier concentration for improved thermoelectric figure of merit. [ABSTRACT FROM AUTHOR]

Published
2011
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3. Improved oxidation resistance of thermoelectric skutterudites coated with composite glass

Author

Dong, Hongliang, Li, Xiaoya, Huang, Xiangyang, Zhou, Yanfei, Jiang, Wan, and Chen, Lidong

Subjects
*OXIDATION, *THERMOELECTRICITY, *SKUTTERUDITE, *COMPOSITE materials, *GLASS, *METAL coating, *MICROFABRICATION, *SILICA nanoparticles, *SILICA gel, *POWDER metallurgy, *DISPERSION (Chemistry)
Abstract

Abstract: Composite glass coating was fabricated on thermoelectric (TE) skutterudite (SKD) materials by using the dispersion system of modified nano-silica aerogel and micro glass powder. The organosilane was used as the binder in the slurry-blade process and isolated pores in micrometer size are formed due to the decomposition of polymerization product derived from organosilane and nano-silica aerogel particles at high temperature. These pores can effectively decrease the thermal conductivity of coating layer. The composite glass coating shows good stability at 823K in air. However, significant microstructural changes in the coating were observed after aging at 923K, at which the isolated micro-sized pores grew to sub-millimeter pores while the continuous composite glass coating was still maintained. The glass coated skutterudite materials show good oxidation resistance, i. e. no oxides are observed even after heating at 923K in ambient air. The present glass-coating approach is expected to be applied in fabricating skutterudite-based thermoelectric devices. [Copyright &y& Elsevier]

Published
2013
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4. High thermoelectric performance of Yb0.26Co4Sb12/yGaSb nanocomposites originating from scattering electrons of low energy

Author

Xiong, Zhen, Chen, Xihong, Huang, Xiangyang, Bai, Shengqiang, and Chen, Lidong

Subjects
*NANOCOMPOSITE materials, *SKUTTERUDITE, *THERMOELECTRICITY, *NANOSTRUCTURED materials, *ELECTRON scattering, *MICROFABRICATION, *FORCE & energy, *THERMAL conductivity
Abstract

Abstract: n-type filled skutterudite Yb0.26Co4Sb12 composites in which p-type GaSb nanostructured inclusions (5–20nm) were dispersed were fabricated by an in situ method involving the introduction of metastable void-filling impurity Ga and enrichment of Sb in the synthesis procedure. With the homogeneously dispersed GaSb nanoinclusions, which probably result from the scattering of low-energy electrons by the GaSb-related boundary energy barriers, the power factor is enhanced due to the significant enhancement of the Seebeck coefficient. The total thermal conductivity was decreased with the depression of electronic thermal conductivity. As a result, the dimensionless thermoelectric figure of merit ZT value was improved over a wide working temperature range of 300–850K, and the expected optimal thermal-electric conversion efficiency ηopt 15.0% was obtained for the Yb0.26Co4Sb12/0.2GaSb nanocomposite. [Copyright &y& Elsevier]

Published
2010
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