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Printed electronic paper identifies its interest in flexible organic electronics and sustainable and clean energy applications because of its straightforward production method, cost‐effectiveness, and positive environmental impact. However, current limitations include restricted material thickness and the use of supporting substrate for printing. Here, 2D and 3D electronic patterned paper are fabricated from direct ink writing (DIW) nanocellulose and PEDOT:PSS‐based materials using syringe deposition and 3D printing. The conductor patterns are integrated in the bulk of the paper, while non‐conductive sections are used as support to form free‐standing paper. The strong interface between the patterns of electronic patterned paper gives mechanical stability for practical handling. The conductive paper‐based electrode has 202 S cm−1 and is capable of handling electric current up to 0.7 A, which can be used for high‐power devices. Printed supercapacitor papers show high specific energy of 4.05 Wh kg−1, specific power of 4615 W kg−1 at 0.06 A g−1, and capacitance retention above 95% after 2000 cycles. The new design structure of electronic patterned papers presents a solution for additive manufacturing of paper‐based composites for supercapacitors, wearable electronics, or sensors for smart packaging. [ABSTRACT FROM AUTHOR]

Low‐voltage operating organic electronic circuits with long‐term stability characteristics are receiving increasing attention because of the growing demands for power efficient electronics in Internet of Things applications. To realize such circuits, inverters, the fundamental constituents of many circuits, with stable transfer characteristics should be designed to provide low‐power consumption. Here, a rational inverter design, based on fully screen printed p‐type organic electrochemical transistors with a channel size of 150 × 80 µm2, is explored for driving conditions with input voltage levels that differs of about 1 V. Further, three different inverter circuits are explored, including resistor ladders with resistor values ranging from tens of kΩ to a few MΩ. The performance of single inverters, 3‐stage cascaded inverters and 3‐stage ring oscillators are characterized with respect to output voltage levels, propagation delay, static power consumption, voltage gain, and operational frequency window. Depending on the application, the key performance parameters of the inverter can be optimized by the specific combination of the input voltage levels and the resistor ladder values. A few of the inverters are in fact fully functional up to 30 Hz, even when using input voltage levels as low as (0 V, 1 V). [ABSTRACT FROM AUTHOR]

A novel patterning technique of conductive polymers produced by vapor phase polymerization is demonstrated. The method involves exposing an oxidant film to UV light which changes the local chemical environment of the oxidant and subsequently the polymerization kinetics. This procedure is used to control the conductivity in the conjugated polymer poly(3,4-ethylenedioxythiophene):tosylate by more than six orders of magnitude in addition to producing high-resolution patterns and optical gradients. The mechanism behind the modulation in the polymerization kinetics by UV light irradiation as well as the properties of the resulting polymer are investigated. [ABSTRACT FROM AUTHOR]

Abstract: We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome the underlying wettability problem at this interface. The method includes depositing an amphiphilic diblock copolymer (P3HT-b-PDMAEMA). This material is designed to have one set of blocks that mimics the hydrophobic properties of the semiconductor (poly(3-hexylthiophene) or P3HT), while the other set of blocks include polar components that improve adhesion to the polyelectrolyte insulator. Contact angle measurements, atomic force microscopy, and X-ray photoelectron spectroscopy confirm formation of the desired surface modification film. Successful inkjet printing of a smooth semiconductor layer allows us to manufacture complete transistor structures that exhibit low-voltage operation in the range of 1V. [Copyright &y& Elsevier]