1. Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives.
- Author
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Zajac, M., Kucharski, R., Grabianska, K., Gwardys-Bak, A., Puchalski, A., Wasik, D., Litwin-Staszewska, E., Piotrzkowski, R., Z Domagala, J., and Bockowski, M.
- Subjects
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GALLIUM nitride , *CRYSTAL structure , *THERMAL conductivity , *SUBSTRATES (Materials science) , *THERMAL insulation - Abstract
Abstract Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5 × 104 cm−2. Crystals with different types of conductivity, n-type with free electron concentration up to 1019 cm−3, p-type with free hole concentration of 1016 cm−3, and semi-insulating with resistivity exceeding 1011 Ω cm, can be obtained. Ammonothermal GaN of various electrical properties is described in terms of point defects present in the material. Potential applications of high-quality GaN substrates are also briefly shown. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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