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Abstract: Segregation of implanted As during steam oxidation of Si wafers is shown to result in a highly enriched, thin layer of As at the interface between the oxide and the underlying Si. Also, the oxidation rate was found to increase by as much as a factor of ∼2 depending on the depth distribution and fluence of the implanted As impurity. The thin As layer collected at the interface can be used in the design of very shallow junctions. This mechanism enables the formation of a narrow, degenerately doped layer of Si, which can be tailored to have a thickness of only few monolayers depending on the fluence of the implantation used. [Copyright &y& Elsevier]

Thirty-eight water samples were collected from various areas of Anzali lagoon, Iran. Initial screening of a total of 100 bacterial isolates, resulted in the selection of one isolate with maximum adsorption capacity. It was tentatively identified as Bacillus sp. and named strain GT-83-23. The optimum pH of the medium was found to be 2.0 for Re(VII) adsorption. Uptakes of Re(VII) increased with increasing Re(VII) concentration and decreased sharply by the presence of increasing concentrations of NaCl. The kinetic of Re(VII) sorption by Bacillus sp. GT-83-23 was fast, reaching more than 62% of the total sorption capacity within 5 min. As the cell concentration increased, the amount of Re(VII) adsorbed by each cell (specific uptake) decreased, whereas the total amount of Re(VII) adsorbed enhanced. Cells immobilized in calcium alginate gel took up 77% of the Re(VII). The binding of Re(VII) on the Bacillus sp. GT-83-23 was studied with micro-PIXE.