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All-dielectric nanoarrays have strong electromagnetic resonances with various interesting applications and are tuned by adjusting their geometrical parameters. However, their optical properties are permanently encoded during fabrication. This study presents robust dynamically tunable all-dielectric nanoresonators for controllable, reversible, and reproducible color filtering. Our design uses an array of TiO2 nanodiscs embedded in a transparent, stretchable polydimethylsiloxane (PDMS) membrane and exhibits a narrow spectral response due to Mie magnetic and electric dipole resonances hybridized with the TiO2 nanodiscs lattice modes. By mechanically stretching the PDMS membrane, the pitch of the TiO2 nanodiscs was increased and the spectral location of the resonances was altered. Additionally, an optically asymmetric structure was fabricated by partially embedding TiO2 nanodiscs in PDMS. Thus, the magnitude of the Rayleigh anomaly diffraction, which could interrupt the dipole resonances, was reduced. Our design has sharp, frequency-tunable resonances in the visible spectrum, and we demonstrated dynamic tunability by stretching the metasurfaces.

Nanowires have promising applications as photodetectors with superior ability to tune absorption with morphology. Despite their high optical absorption, the quantum efficiencies of these nanowire photodetectors remain low due to difficulties in fabricating a shallow junction using traditional doping methods. As an alternative, we report nonconventional radial heterojunction photodiodes obtained by conformal coating of an indium oxide layer on silicon nanowire arrays. The indium oxide layer has a high work function which induces a strong inversion in the silicon nanowire and creates a virtual p-n junction. The resulting nanowire photodetectors show efficient carrier separation and collection, leading to an improvement of quantum efficiency up to 0.2. In addition, by controlling the nanowire radii, the spectral responses of the In2O3/Si nanowire photodetectors are tuned over several visible light wavelengths, creating a multispectral detector. Our approach is promising for the development of highly efficient wavelength-selective photodetectors.

The responsivity spectrum of a photodetector is one of its key specifications. It ultimately originates from the combination of the absorption spectrum of the photosensitive region and the internal quantum efficiency. Many applications of photodetectors would benefit from an improved ability to tailor the responsivity spectrum. This is particularly true for color and multispectral imaging. The absorption spectrum of a bulk (unstructured) semiconductor is fixed however, being determined by its complex refractive index. Here, we review recent work that demonstrates that the absorption spectrum of a photodetector can be controlled via waveguide resonances in semiconductor nanowires. We discuss the physical interpretation for this phenomenon. We review work in which p-i-n photodiodes were incorporated into vertically oriented silicon nanowires, and then used for color imaging. We review work in which tandem-style photodetectors were demonstrated, with a p-i-n silicon nanowire photodiode formed above an n-i-p planar silicon photodiode. We review work in which narrowband photodetection across the visible-to-infrared was demonstrated using germanium nanowires. Finally, we describe related work in which silicon nanowires have been explored for other applications, namely solar cells.

At visible wavelengths, photodetection in three channels (red, green and blue) enables color imaging. Yet the spectra of most materials provide richer information than just color, and therefore considerable interest exists for imaging with multiple spectral bands across the visible to infrared. This endeavor requires narrowband photodetection, which is generally achieved by combining broadband photodetectors with filters or spectrometers, but with added bulk and cost. Here we report, for the first time to our knowledge, vertical germanium nanowires as narrowband photodetectors. Our devices exhibit spectral response peaks that are as narrow as 40 nm and can be shifted from visible (~600 nm) to infrared (~1600 nm) wavelengths by appropriate design. The spectral selectivity arises from the nanowires acting as waveguides and, surprisingly, is enhanced by radial narrowing of the carrier collection region due to surface recombination. The incorporation of germanium into integrated circuits in a high yield and c...

We created a polymer-embedded TiO2 nanodiscs device with a robust tunable color filters that preserve veiy sharp spectral bands through spatial variations of the pitch of the meta array.

We demonstrated through a series of electromagnetic simulations and FTIR measurements a proof of concept for using vertically aligned arrays of InSb nanostructures as devices for selective SWIR and MWIR light absorption.

This chapter provides an overview of fabrication of silicon nanowires by top-down etching methods. The focus will be on wet and dry etching methods to achieve vertically aligned silicon nanowires. We will start by building an understanding of the dry etching process. Then we will delve deeper into the mechanisms, benefits, and drawbacks of these dry etching processes. This is followed by wet etching methods, primarily metal-assisted chemical etching methods. Finally, we will provide a guideline to fabricate vertically aligned Si nanowire arrays with both dry and wet chemical processes.

We present experimental results demonstrating multiple order Smith-Purcell radiation in high aspect ratio Silicon Nanowires structures using low-energy electrons (2.5–10keV). These produce emission spanning the visible, paving the way to a fully tunable ultraviolet source.

These In a powers system network there are many problems related to power quality. So to improve power quality of a system we use different devices such as active power filters. Active power filters are classified into two types that is Shunt Active Power Filter (APF) and Series Active Power Filter (APF) and combination of both is known as UPQC (Unified Power Quality Conditioner). Here we have done simulation of Shunt Active Power Filter, Series Active Power Filter and Unified Power Quality Conditioner. Shunt APF is used to mitigate the problems due to current harmonics which is because of non-linear load and make source current sinusoidal and distortion free. The control scheme used is hysteresis current controller using "p-q theory". Series APF is used to mitigate problems caused due to voltage distortion and unbalance present in source voltage and make load voltage perfectly balanced and regulated. The control scheme used is Hysteresis voltage controller by using a-b-c to d-q transformations. Then Shunt APF and Series APF is combined for designing UPQC and by this current harmonics in load current and voltage unbalances in source voltage both are removed and source current becomes sinusoidal and load voltage becomes perfectly balanced.

In parallel to developing technology, demand for more energy makes us seek new energy sources. The most important application field of this research is renewable energy resources. Solar energy is being popular ones owing to abundant, ease of availability and convertibility to the electric energy. This paper covers a detailed analysis of solar PV system with Cuk converter such that it gives constant and stepped up dc voltage to the load. A Cuk Converter is used for examine the performance of solar PV system. Simulink of cuk converter in PV system and analyzing output voltage through MATLAB.

International audience; A single silicon nanowire core-shell structure has been elaborated. Technological stages of the process are presented. The device results in a P-i-N radial junction: the core is a P-type silicon nanowire encapsulated in an intrinsic thin silicon layer and an N-type doped silicon layer. Scanning electron microscopy observations, as well as the electrical I(V) characterisation on single nanowires, are presented.

The future use of nanostructures such as silicon nanowires in solar cells will only occur if their growth is selforganized, with high density, controlled dimensions and spacing. In this work we develop and study the first elaboration steps of high quality arrays of nanowires functionalized as solar cells using a radial junction. The core of the structure is made of a P-doped nanowire grown by Chemical Vapor Deposition (CVD) using the Vapor-Liquid-Solid (VLS) method, and the shell is fabricated by a 2D conformal deposition of N-doped silicon layer by CVD. The resulting device is then a dense array of vertically aligned and functionalized silicon nanowires that presents interesting enhanced light absorption.

We experimentally demonstrate arrays of vertical Ge nanowires as spectrally-selective photodetectors at visible to infrared wavelengths. Measurements reveal that the external quantum efficiency spectra of fabricated devices vary with the radius of the constituent nanowires.

International audience; The efficient photon management in nanowires coupled with tunable absorption can provide a significant advancement in the current solar cell technology. Adding a shell on the nanowire (NW) offers an extra degree of freedom for tailoring the NW absorption. Calculations are performed to study the shell-induced changes in the core absorption of an ideal Si nano-cylinder after enclosing it with conformal dielectrics of different thicknesses and permittivities. The calculation shows that coating the Si nanowires with nonabsorbing or weakly absorbing dielectric shells can significantly improve the mean spectral absorption efficiency of the Si core for optimized thickness and extinction. Experimental data are brought from a neighboring system consisting of individual NW junctions sandwiched between an oxidized planar Si substrate and a top-deposited oxide layer. The measured absorption spectra show a good agreement with the theoretical spectra, with a mean spectral absorption enhancement after oxide coating as high as 5.7 in axial junctions, exceeding its theoretical counterpart that is limited to similar to 1.5. Coating the nanowires with an optimized oxide shell provides a new approach to significantly enhance the light harvesting in nanowires and will lead to more efficient photovoltaics.

In the area of computer security, phishing is the criminally fraudulent process of attempting to acquire sensitive information such as usernames, passwords and credit card details by masquerading as a trustworthy entity in an electronic communication. Phishing is typically carried out by e-mail, and it often directs users to enter details at a fake website which almost identical to original one. Phishing filters help Internet users avoid scams that create fake websites. Such sites ask for personal information, including banking passwords or offer software downloads. This paper concerned with anti-phishing techniques with the help of hardware device. Anti phishing software is designed to track websites and monitor activity, any suspicious behavior can be automatically reported and even reviewed as a report after a period of time.

We experimentally demonstrate that, by varying their diameter, the visible-to-infrared reflectance spectra of arrays of vertical Ge nanowires can be tuned. The results could enable future nanowire-based photodetectors with tailored responsivity spectra.

International audience; The introduction of Hydrogen Chloride during the in-situ doping of Silicon Nanowires (SiNWs) grown using the Vapour Liquid Solid (VLS) mechanism was investigated. Compared with non-chlorinated atmospheres, the use of HCl with dopant gases considerably improves the surface morphology of the SiNWs, leading to extremely smooth surfaces and a greatly reduced tapering. The variations in the wire diameter are massively reduced for boron doping, and can not be measured at 600°C for phosphorous over several tens of micrometers. This remarkable feature is accompanied by a frozen gold migration from the catalyst, with no noticeable levels of gold clusters observed using scanning electron microscopy. A detailed study of the NWs apparent resistivity reveals that the dopant incorporation is effective for both types of doping. A graph linking the apparent resistivity to the dopant to silane dilution ratio is built for both types of doping and discussed in the frame of the previous results.

Summary The growing research in the field of photovoltaics has led to various strategies for increasing the light interaction in absorbers, for instance the use of nanostructures like nanowires where leaky mode resonances enhanced absorption efficiency. Towards this goal, we present a study of the light absorption in single Si nanowires, by means of microphotocurrent spectroscopy combined with transport measurements of carrier diffusion length using the electron beam induced current technique. The study is performed on different diameter nanowires with Schottky junctions created by doping modulation during Chemical Vapor Deposition–Vapor Liquid Solid growth. We show that the photocurrent spectra of single Si nanowires do not follow monotonous profiles as bulk silicon, but rather have steep valleys and peaks whose position and intensity are diameter dependent. These sharp modulations result from a resonant coupling between incident photons and cavity modes of the nanowires. A good agreement between the experiment and the theoretical fit using Mie theory is observed with a red shift in the

Undoped silicon nanowire (Si NW) field-effect transistors (FETs) with a back-gate configuration have been fabricated and characterized. A thick (200 nm) Si3N4 layer was used as a gate insulator and a p++ silicon substrate as a back gate. Si NWs have been grown by the chemical vapour deposition method using the vapour–liquid–solid mechanism and gold as a catalyst. Metallic contacts have been deposited using Ni/Al (80 nm/120 nm) and characterized before and after an optimized annealing step at 400 °C, which resulted in a great decrease in the contact resistance due to the newly formed nickel silicide/Si interface at source and drain. These optimized devices show a good hole mobility of around 200 cm2 V−1 s−1, in the same range as the bulk material, with a good ON current density of about 28 kA cm−2. Finally, hysteretic behaviour of NW channel conductance is discussed to explain the importance of NW surface passivation.

Nanostructuring a material permits control over its interaction with light. Advanced methods for controlling the visible-to-infrared absorption spectra of semiconductor materials would present opportunities for photodetectors with engineered spectral response. Here, we experimentally demonstrate the fabrication of arrays of vertical Ge nanowires with different diameters. Measured reflection spectra show dip features for which electromagnetic simulations predict enhanced absorption. These can be shifted to longer wavelengths by increasing the diameters of the nanowires. We show that the reflectance dips broaden if the nanowires exhibit tapering. We furthermore show that observed ripple features in the dips are associated with longitudinal modes of the nanowires.

Silicon nanowires (Si NWs) are promising candidates for field-effect transistor (FET) conduction channel. Planar configuration using a back gate is an easy way to study these devices. We demonstrate the possibility to build high performance FET using a simple silicidation process leading to high effective holes' mobility between 130 cm2⋅V-1⋅s-1 and 200 cm2⋅V-1⋅s-1 and good ION/IOFF ratio up to 105. Moreover we investigated the possibility to passivate the NWs using either a high-k dielectric layer or a thermal oxide shell around the NWs. This leads to a reduction of the hysteretic behavior during the gate voltage sweep from 30 V to 1 V depending on the material and the gate configuration.