48 results on '"Ando, Yuto"'
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2. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
3. Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness
4. Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
5. Laser slice thinning of GaN-on-GaN high electron mobility transistors
6. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
7. Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes
8. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
9. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz
10. The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer.
11. Thickness Measurement at High Lift-Off for Underwater Corroded Iron-Steel Structures Using a Magnetic Sensor Probe
12. “Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration
13. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process
14. Thickness Measurement at High Lift-Off for Underwater Corroded Iron-Steel Structures Using a Magnetic Sensor Probe.
15. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN
16. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg
17. “Regrowth-free” Fabrication of AlGaN/GaN HBT with N-p-n Configuration
18. Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility
19. Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach
20. Experimental demonstration of GaN IMPATT diode at X-band
21. “Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration.
22. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching
23. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching
24. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces
25. Improvement of Contacts on Etched p-type GaN by Low-bias ICP–RIE
26. Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces
27. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes
28. Impact of high-temperature implantation of Mg ions into GaN
29. Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
30. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms
31. Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility.
32. Precise Measurement of Carrier Concentrations in n-Type GaN by Phase-Shifting Electron Holography
33. Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
34. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates
35. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics
36. Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography
37. Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown
38. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.
39. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy
40. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
41. m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates
42. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates
43. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE (Phys. Status Solidi A 8∕2017)
44. <italic>m</italic>‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle <italic>m</italic>‐Plane GaN Substrates.
45. Automatic Routing System for Multiple Pipe-lines
46. 209 Study on simultaneous measurement of velocity and temperature and mixing enhancement in an axisymmetric jet
47. An Automatic Piping Algorithm including Elbows and Bends
48. 355 Study on the composite probe for simultaneous measurement of velocity and temperature
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