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A low‐loss miniaturized bandpass filter is presented using 3D glass‐based RDL packaging technology. A new topology consisting of one modified Pi‐section and one modified T‐section is introduced to generate three transmission zeros which can achieve the high out‐of‐band rejection. A combination of 2D planar inductors and high‐Q 3D inductors is used to achieve low insertion loss and minimize the filter size. In addition, one grounded resonator at input terminal is introduced to generate an extra transmission zero in the low end. The proposed bandpass filter covering 3.3–4.2 GHz is fabricated with a compact size of 1.6 mm × 0.8 mm × 0.25 mm. It exhibits an insertion loss of less than 1.0 dB at a center frequency of 3.75GHz and a return loss of better than 14 dB. The proposed design has a 3 dB fractional bandwidth of 37.6%. Its out‐of‐band rejection is better than 20 dB at the low frequency band from DC to 2.0 GHz and better than 19 dB at the high frequency band from 5.0 to 9.0 GHz. The simulated and measured results of the proposed BPF are in reasonably good agreement. [ABSTRACT FROM AUTHOR]

A compact bandpass filter (BPF) with wide stopband performance is proposed and implemented on Si‐based integrated passive device (IPD) technology. A modified topology consisting of a novel Pi‐section and two capacitors are introduced in this BPF. The Pi‐section topology can achieve a band‐pass performance and generate four transmission zeros out‐of‐band. These two capacitors can improve the in‐band matching and also widen the stopband. The proposed BPF with a compact size of 1.0 mm × 0.5 mm × 0.3 mm is fabricated using Si IPD technology and measured by on‐wafer probing. It shows that the insertion loss is less than 1.75 dB, the return loss is better than 18 dB in the 5G band, and the upper stopband suppression level is better than 17.5 dB up to 18 GHz. The simulated and measured results of the proposed BPF are in reasonably good agreement. [ABSTRACT FROM AUTHOR]

A miniaturized bandpass filter (BPF) with low insertion loss based on a modified T‐section and a grounded transmission‐zero resonator is proposed. The novel T‐section consists of two resonators, which can achieve the bandpass performance with two transmission zeros (TZs) in the upper band. The grounded transmission‐zero resonator can generate an extra transmission zero in the lower band. Therefore, high frequency selectivity can be achieved by the above three transmission zeros near the passband. The proposed BPF can achieve an insertion loss of 0.8 dB and a return loss of 22 dB covering 3.3–4.2 GHz, and the upper‐stopband attenuation is better than 20 dB up to 12.5 GHz (3.3f0). The proposed BPF with a miniaturized size of 1.2 mm × 0.5 mm × 0.3 mm have been fabricated using Si‐based integrated passive devices (IPDs) technology and measured by on‐wafer probing. The simulated and measured results of the proposed BPF are in reasonably good agreement. [ABSTRACT FROM AUTHOR]

A miniaturised integrated passive device (IPD) balun design with low insertion loss and balanced amplitude and phase is proposed for Wi‐Fi/Bluetooth applications. In this design, a novel topology based on the modified T‐type filter structure is introduced to offset the parasitic and coupling effects that cause poor balance in IPD design. The proposed balun design is fabricated on a GaAs substrate. The measured insertion loss is lower than 0.9 dB and the measured return loss is >16 dB in the frequency range of 2.2–2.9 GHz. The measured results of amplitude and phase show rather minor imbalances, which are lower than ±0.67 dB and ±1.8° respectively. The fabricated device size is 0.9 mm × 0.6 mm only. [ABSTRACT FROM AUTHOR]

A wideband and scalable model of RF CMOS spiral inductors by virtue of a novel space-mapping neural network (SMNN) is presented. A new modified 2-[pi] equivalent circuit is used for constructing the SMNN model. This new modeling approach also exploits merits of space-mapping technology. This SMNN model has much enhanced learning and generalization capabilities. In comparison with the conventional neural network and the original 2-[pi] model, this new SMNN model can map the input-output relationships with fewer hidden neurons and have higher reliability for generalization. As a consequence, this SMNN model can run as fast as an approximate equivalent circuit, yet preserve the accuracy of detailed electromagnetic simulations. Experiments are included to demonstrate merits and efficiency of this new approach. Index Terms--Modeling, neural networks, space mapping, spiral inductor.

A novel parametric modeling technique is proposed to develop combined neural network and transfer function models for both time and frequency (TF) domain applications of passive components, where the neural network is trained to map geometrical variables to the coefficients of transfer functions. Built on our previous work, a new order-changing module is developed to enforce stability of transfer functions and simultaneously guarantee continuity of coefficients. A constrained optimization strategy is introduced to enforce passivity of transfer functions through a neural network training process. A general equivalent circuit for two-port passive components is generated directly from coefficients of arbitrary-order transfer functions. Once trained, the parametric model can provide accurate and fast prediction of the electromagnetic behavior of passive components with geometrical parameters as variables. Compared to our previous work, the proposed method enables models to work well in the time domain providing good accuracy in challenging modeling applications. Two parametric modeling examples of spiral inductors and interdigital capacitors, and their application in both time and frequency domain simulations of a power amplifier are examined to demonstrate the validity of the proposed technique. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE , 2013. [ABSTRACT FROM AUTHOR]

This paper describes a novel method of modeling the differential via on multilayered printed circuit boards (PCBs) used in high-speed digital designs based on the analytical equations for characteristic impedance and effective dielectric constant. In the absence of measured or electromagnetic simulated data traditionally needed to extract these parameters, this method can quickly and efficiently predict the behavior of the differential via holes on PCBs using a circuit simulator. [ABSTRACT FROM PUBLISHER]