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Your search keyword '"Gutierrez-Aitken, Augusto"' showing total 49 results
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49 results on '"Gutierrez-Aitken, Augusto"'

2. V-band electronically reconfigurable metamaterial.

Author

Radisic, Vesna, Hester, Jimmy G., Nguyen, Vinh N., Caira, Nicholas W., DiMarzio, Donald, Hilgeman, Theodore, Larouche, Stéphane, Kaneshiro, Eric, and Gutierrez-Aitken, Augusto

Subjects
METAMATERIALS, HETEROJUNCTIONS, BIPOLAR transistors, RESONATORS, INTEGRATED circuits
Abstract

In this work, we report on a reconfigurable V-band metamaterial fabricated using an InP heterojunction bipolar transistor production process. As designed and fabricated, the implementation uses complementary split ring resonators (cSRRs) and Schottky diodes in both single unit cell and three unit cell monolithic microwave integrated circuits. Each unit cell has two diodes embedded within the gaps of the cSRRs. Reconfigurability is achieved by applying an external bias that turns the diodes on and off, which effectively controls the resonant property of the structure. In order to measure the metamaterial properties, the unit cells are fed and followed by transmission lines. Measured data show good agreement with simulations and demonstrate that the metamaterial structure exhibits resonance at around 65 GHz that can be switched on and off. The three-unit cell transmission line metamaterial shows a deeper resonance and a larger phase change than a single cell, as expected. These are the first reported reconfigurable metamaterials operating at the V-band using the InP high speed device fabrication process. [ABSTRACT FROM AUTHOR]

Published
2017
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3. Integrated photonics for hyperspectral sensing

Author

Sandor-Leahy, Stephanie R., primary, Davis, Richard L., additional, Gutierrez-Aitken, Augusto, additional, Knight, Mark W., additional, Liao, Lushalan B., additional, Loi, Kwok Kwong, additional, and Yoshida, Wayne, additional

Published
2020
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5. Tunneling injection lasers: a new class of lasers with reduced hot carrier effects

Author

Bhattacharya, Pallab, Singh, Jasprit, Yoon, Howard, Zhang, Xiangkun, Gutierrez-Aitken, Augusto, and Lam, Yeeloy

Subjects
Lasers -- Research, Quantum wells -- Analysis, Tunneling (Physics) -- Observations, Gallium arsenide semiconductors -- Observations, Business, Computers, Electronics, Electronics and electrical industries
Abstract

Quantum-well lasers that exploit tunneling for electron injection into the quantum well ground state exhibit negligible gain compression, superior high-temperature performance, lower Auger recombination and improved modulation characteristics. Lasers of the type InGaAs-GaAs-AlGaAs show both single and multiple quantum-well tunneling injection phenomena. The physical principles behind the superior performance are explored, and relaxation time measurements in quantum wells are presented.

Published
1996

6. Responsivity and impact ionization coefficients of Si(sub 1 - x)Ge(sub x) photodiodes

Author

Lee, Jinju, Gutierrez-Aitken, Augusto L., Li, S.H., and Bhattacharya, Pallab K.

Subjects
Photodetectors -- Research, Spectral sensitivity -- Analysis, Photoionization -- Research, Business, Electronics, Electronics and electrical industries
Abstract

The spectral response characteristics and carrier impact ionization coefficients of Si(sub 1 - x)Ge(sub x) photodiodes grown by MBE are determined. The ratio of electron and hole impact ionization coefficients is computed and is shown to agree well with published data from Si and Ge. The ratio attains unity at x = 0.45 representing a cross-over in the alloy system. Detailed measurement results having important photodetection applications are presented.

Published
1996

9. 3D Wafer-Scale Integration for RF and Digital Applications

Author

Chang-Chien, Patty, primary, Gutierrez-Aitken, Augusto, additional, Sandhu, Rajinder, additional, Hennig, Kelly, additional, Scott, Dennis, additional, Zhou, Joe, additional, Nam, Peter, additional, Geiger, Craig, additional, Poust, Ben, additional, Parlee, Mattew, additional, Thai, K., additional, Phan, W., additional, and Oyama, B., additional

Published
2019
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11. Heterogeneously Integrated V-Band Amplifier

Author

Radisic, Vesna, primary, Scott, Dennis W., additional, Kaneshiro, Eric, additional, Loi, K.K., additional, Wang, Sujane, additional, Monier, Cedric, additional, and Gutierrez-Aitken, Augusto, additional

Published
2018
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15. (Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)

Author

Gutierrez-Aitken, Augusto, primary, Scott, Dennis, additional, Sato, Ken, additional, Poust, Ben, additional, Nakamura, Eric, additional, Thai, Khanh, additional, Chan, Wes, additional, Kaneshiro, Eric, additional, Monier, Cedric, additional, Smorchkova, Ioulia, additional, Lin, Nancy, additional, Ferizovic, Dino, additional, Zeng, Xiang, additional, Oki, Aaron, additional, and Kagiwada, Reynold, additional

Published
2017
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16. A Meeting of Materials: Integrating Diverse Semiconductor Technologies for Improved Performance at Lower Cost

Author

Gutierrez-Aitken, Augusto, primary, Wu, Bryan Yi-Cheng, additional, Scott, Dennis, additional, Sato, Ken, additional, Poust, Benjamin, additional, Watanabe, Monte, additional, Monier, Cedric, additional, Lin, Nancy, additional, Zeng, Xiang, additional, Nakamura, Eric, additional, Cheng, Peter, additional, Kaneshiro, Eric, additional, Chan, Wesley, additional, Smorchkova, Ioulia, additional, Thai, Khanh, additional, Wang, Sujane, additional, Slavin, David, additional, Oki, Aaron, additional, and Kagiwada, Reynold, additional

Published
2017
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18. A DC--20-GHz InP HBT Balanced Analog Multiplier for High-Data-Rate Direct-Digital Modulation and Fiber-Optic Receiver Applications

Author

Kobayashi, Kevin W., Desrosiers, Ryan M., Gutierrez-Aitken, Augusto, Cowles, John C., Tang, Benjamin, Tran, L. T., Block, Thomas Ray, Oki, Aaron K., and Streit, Dwight C.

Subjects
Voltage -- Analysis, Wireless communication systems -- Analysis, Fiber optics -- Evaluation, Local area networks -- Analysis, Business, Computers, Electronics, Electronics and electrical industries
Abstract

This paper reports on a dc-20-GHz InP heterojunction bipolar transistor (HBT) active mixer, which obtains the highest gain-bandwidth product (GBP) thus far reported for a direct-coupled analog mixer integrated circuit (IC). The InP HBT active mixer is based on the Gilbert transconductance multiplier cell and integrates RF, local oscillator, and IF amplifiers. High-speed 70-GHz [f.sub.T] and 160-GHz [f.sub.max] InP HBT devices along with microwave matching accounts for its record performance. Operated as a down-converter mixer, the monolithic microwave integrated circuit achieves an RF bandwidth (BW) from dc-20 GHz with 15.3-dB gain and benchmarks a factor of two improvement in GBP over state-of-the-art analog mixer IC's [1]-[9]. Operated as an up-converter, direct-digital modulation of a 2.4-Gb/s [2.sup.31] - 1 pseudorandom bit sequence (PRBS) onto a 20-GHz carrier frequency resulted in a carrier rejection of a 28 dB, clock suppression of 45 dBc, and less than a 50-ps demodulated eye phase jitter. The analog multiplier was also operated as a variable gain amplifier, which obtained 20-dB gain with a BW from dc-18 GHz, an third-order intercept of 12 dBm, and over 25 dB of dynamic range. A single-ended peak-to-peak output voltage of 600 mV was obtained with a [+ or -] 35-mV 15 Gb/s [2.sup.5] - 1 PRBS input demonstrating feasibility for OC-192 fiber-telecommunication data rates. The InP-based analog multiplier IC is an attractive building block for several wide-band communications such as those employed in satellites, local multipoint distribution systems, high-speed local area networks, and fiber-optic links. Index Terms--Fiber optics, InP HBT, limiter, mixer, multiplier, VGA.

Published
2000

19. W-band InP transmission line metamaterial

Author

Nguyen, Vinh N., primary, Caira, Nicholas W., additional, Hester, Jimmy G., additional, DiMarzio, Donald, additional, Kaneshiro, Eric, additional, Gutierrez-Aitken, Augusto, additional, and Radisic, Vesna, additional

Published
2017
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20. (Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)

Author

Gutierrez-Aitken, Augusto, primary, Scott, Dennis, additional, Sato, Ken, additional, Poust, Ben, additional, Nakamura, Eric, additional, Thai, Khanh, additional, Chan, Wes, additional, Kaneshiro, Eric, additional, Monier, Cedric, additional, Smorchkova, Ioulia, additional, Lin, Nancy, additional, Ferizovic, Dino, additional, Zeng, Xiang, additional, Oki, Aaron, additional, and Kagiwada, Reynold, additional

Published
2016
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23. Diverse Accessible Heterogeneous Integration (DAHI) at Northrop Grumman Aerospace Systems (NGAS)

Author

Gutierrez-Aitken, Augusto, primary, Hennig, Kelly, additional, Scott, Dennis, additional, Sato, Ken, additional, Chan, Wesley, additional, Poust, Benjamin, additional, Zeng, Xiang, additional, Thai, Khanh, additional, Nakamura, Eric, additional, Kaneshiro, Eric, additional, Lin, Nancy, additional, Monier, Cedric, additional, Smorchkova, Ioulia, additional, Oyama, Bert, additional, Oki, Aaron, additional, Kagiwada, Reynold, additional, and Chao, Greg, additional

Published
2014
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27. A 0.25 $\mu$m InP DHBT 200 GHz+ Static Frequency Divider

Author

D'Amore, Matt, primary, Monier, Cedric, additional, Lin, Steven Taiyu, additional, Oyama, Bert, additional, Scott, Dennis W., additional, Kaneshiro, Eric N., additional, Chang, Ping-Chih, additional, Sato, Kenneth F., additional, Niemi, Alex, additional, Dang, Linh, additional, Cavus, Abdullah, additional, Gutierrez-Aitken, Augusto, additional, and Oki, Aaron K., additional

Published
2010
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28. Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies

Author

Gutierrez-Aitken, Augusto, primary, Chang-Chien, Patty, additional, Scott, Dennis, additional, Hennig, Kelly, additional, Kaneshiro, Eric, additional, Nam, Peter, additional, Cohen, Neir, additional, Ching, Daniel, additional, Thai, Khanh, additional, Oyama, Bert, additional, Zhou, Joe, additional, Geiger, Craig, additional, Poust, Ben, additional, Parlee, Matthew, additional, Sandhu, Randy, additional, Phan, Wen, additional, Oki, Aaron, additional, and Kagiwada, Reynold, additional

Published
2010
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29. Advanced InP HBT Technology at Northrop Grumman Aerospace Systems

Author

Gutierrez-Aitken, Augusto, primary, Monier, Cedric, additional, Chang, Pablo, additional, Kaneshiro, Eric, additional, Scott, Dennis, additional, Chan, Beckie, additional, D'Amore, Matt, additional, Lin, Steven, additional, Oyama, Bert, additional, Sato, Ken, additional, Cavus, Abdullah, additional, and Oki, Aaron, additional

Published
2009
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31. Transistor Level Integration of InP HBT and Si CMOS

Author

Nam, Peter, primary, Zhou, Joe, additional, Chang-Chien, Patty, additional, Hennig, Kelly, additional, Scott, Dennis, additional, Oyama, B., additional, Thai, K., additional, Phan, W., additional, Sandhu, Rajinder, additional, Gutierrez-Aitken, Augusto, additional, Wang, J., additional, Barsky, M., additional, and Oki, A., additional

Published
2008
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37. Sub-Micron INP Double Heterojunction Bipolar Transistor with Greater than 400GHZ fT and fMAX

Author

Chang, P., primary, Sawdai, Donald, additional, Gambin, Vincent, additional, Zeng, Xianglin, additional, Li, Danny, additional, Yamamoto, Joy, additional, Loi, Kwok, additional, Leslie, Gregg, additional, Wang, Jennifer, additional, Elmadjian, Raffi, additional, Nam, Peter, additional, Grossman, Chris, additional, Barsky, Mike, additional, Gutierrez-Aitken, Augusto, additional, and Oki, Aaron, additional

Published
2006
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38. High Performance Sub-Micron InP/InGaAs Heterojunction Bipolar Transistor with Advanced Interconnect Technology

Author

Chang, Ping-Chih, primary, Scott, Dennis, additional, Sawdai, Donald, additional, Dang, Linh, additional, Li, Danny, additional, Zeng, Xianglin, additional, Nam, Peter, additional, Wang, Jennifer, additional, Gambin, V., additional, Wen, Phan, additional, Chan, Beckie, additional, Oyama, Bert, additional, Barsky, Michael, additional, Gutierrez-Aitken, Augusto, additional, and Oki, Aaron, additional

Published
2006
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42. A 0.25 \mum InP DHBT 200 GHz+ Static Frequency Divider.

Author

D'Amore, Matt, Monier, Cedric, Lin, Steven Taiyu, Oyama, Bert, Scott, Dennis W., Kaneshiro, Eric N., Chang, Ping-Chih, Sato, Kenneth F., Niemi, Alex, Dang, Linh, Cavus, Abdullah, Gutierrez-Aitken, Augusto, and Oki, Aaron K.

Abstract

Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25\,\mu\ m 530\,GHz f T/600\,GHz+ f \max InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6 GHz refid="ref1"/ . The divide-by-two core flip-flop dissipates 228 mW. Techniques used for the divider design optimization and for selecting variants to maximize performance across process changes are also discussed. [ABSTRACT FROM PUBLISHER]

Published
2010
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43. Ultrahigh-Efficiency Power Amplifier for Space Radar Applications.

Author

Quach, Tony K., Watson, Paul M., Okamura, Wendy, Kaneshiro, Eric N., Gutierrez-Aitken, Augusto, Block, Thomas R., Eldredge, Jack W., Jenkins, Thomas J., Kehias, Lois T., Oki, Aaron K., Sawdai, Donald, Welch, Ryan J., and Worley, Rick D.

Subjects
POWER amplifiers, INDIUM phosphide, BIPOLAR transistors, ELECTRIC lines
Abstract

Describes a broad-band switch mode power amplifier based on the indium phosphide double heretojunction bipolar transistor technology. Combination of alternative Class-E mode of operation with a harmonic termination technique; Minimization of the insertion loss of matching circuitry; Use of transmission line topology to achieve broad-band harmonic terminations.

Published
2002

44. Cantilevered Base InP DHBT for High Speed Digital Applications.

Author

Gutierrez-Aitken, Augusto L., Kaneshiro, Eric N., Matsui, James H., Sawdai, Donald J., Notthoff, Johannes K., Chin, Patrick T., and Oki, Aaron K.

Subjects
*BIPOLAR transistors, *DIGITAL electronics
Abstract

High speed digital logic is essential in diverse applications such as optical communication, frequency synthesizers, and analog-digital conversion. Current research efforts indicate that technologies utilizing heterojunction bipolar transistors (HBT) are the preferred approach for systems operating at clock frequencies of 40 GHz and above (1-6). In this paper we report a novel InAlAs/InGaAs/InP double-HBT (DHBT) with a cantilevered base layer and undercut collector. We fabricated and demonstrated an 80 GHz 2:1 digital frequency divider, and a 5 GHz 8-bit phase/7-bit magnitude Direct Digital Synthesizer (DDS) chip with approximately 3000 transistors using this technology. [ABSTRACT FROM AUTHOR]

Published
2001
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45. (Invited) Diverse Accessible Heterogeneous Integration (DAHI) Foundry at Northrop Grumman Aerospace Systems (NGAS)

Author

Gutierrez-Aitken, Augusto, Scott, Dennis, Sato, Ken, Poust, Ben, Nakamura, Eric, Thai, Khanh, Chan, Wes, Kaneshiro, Eric, Monier, Cedric, Smorchkova, Ioulia, Lin, Nancy, Ferizovic, Dino, Zeng, Xiang, Oki, Aaron, and Kagiwada, Reynold

Abstract

The performance, size, weight and power requirements for future systems are increasingly demanding. These can be met by intimate integration of lower power and higher performance scaled CMOS and compound semiconductor technologies into smaller areas and volumes. The more adaptable and more intimate is this integration between two or more technologies, the more flexibility is given to the designer for the selection of the technology for a specific function, or even better, for an optimum combination of different transistor technologies in the same function or cell in the design. Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing integration processes, design kits and thermal simulation tools to integrate submicron CMOS, InP HBT, GaN HEMT and high-Q passive technologies for advanced DoD systems. We have demonstrated integration of NGAS’ InP HBT and GaN HEMT technologies on 65nm and 45nm CMOS wafers.

Published
2016
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46. (Invited) Advanced Heterogeneous Integration of InP HBT and CMOS/SiGeBiCMOS Technologies

Author

Gutierrez-Aitken, Augusto, Chang-Chien, Patty, Oyama, Bert, Scott, Dennis, Hennig, Kelly, Kaneshiro, Eric, Chen, John, Nam, Peter, Ching, Daniel, Thai, Khanh, Poust, Ben, Oki, Aaron K, and Kagiwada, Reynold

Abstract

Under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program, Northrop Grumman Aerospace Systems (NGAS) has developed an advanced heterogeneous integration technology to intimately integrate compound semiconductor (CS) devices and circuits on CMOS/SiGeBiCMOS wafers. The integration approach is based on a direct face-to-face bonding between pre-fabricated InP chiplets and Si wafers. The heterogeneous integration process is compatible with any semiconductor technology. This integration enables significant improvement in dynamic range and bandwidth of high performance mixed signal circuits. In this paper we describe the integration approach and present two demonstration circuits.

Published
2013
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47. Indium phosphide-based high performance quantum well avalanche photodiodes and integrated photoreceivers.

Author

Gutierrez-Aitken, Augusto L.

Subjects
Engineering, Electronics and Electrical
Abstract

Large bandwidth optical communication systems are becoming more important than ever for transferring information efficiently. The availability of high performance photodetectors and front-end photoreceivers that operate in the low-loss 1.55 $\mu$m wavelength window of silica optical fibers is crucial for the development of these systems. The objective of the present work was to design, fabricate, and characterize InP-based discrete Separate Absorption and Multiplication Avalanche Photodiodes with a strained MQW avalanche region (SAM(MQW)-APD) and monolithically integrated transimpedance PIN-FET and PIN-HBT photoreceivers, which operate at multi-Gbit/s. High-speed and high gain-bandwidth product SAM(MQW)-APDs with a strained In$\sb{x}$Ga$\sb{1-x}$As/In$\sb{y}$Al$\sb{1-y}$As avalanche region were fabricated and characterized. An APD using hole injection into a lattice-matched MQW multiplication region demonstrated a bandwidth of $\sim$6.7 GHz, while an APD with tensile strain in the wells and compressive strain in the barriers demonstrated a bandwidth of $\sim$7.9 GHz. An APD using electron injection into a lattice-matched MQW multiplication region demonstrated a G*BW product of $\sim$110 GHz, while an APD with compressive strain in the wells and tensile strain in the barriers demonstrated a G*BW product of $\sim$139 GHz. Integrated PIN-FET photoreceivers with transimpedance and transimpedance/voltage amplifiers based on regrown 0.1 $\mu$m gate length MODFETs were fabricated and characterized. The regrown MODFETs demonstrated high transconductance, with peak values of 610 mS/mm and current densities up to 350 mA/mm at a drain bias of 1.5 V, and $f\sb{T}$ and $f\sb{max}$ of 104 GHz and 70 GHz, respectively. The photoreceiver with a 3-transistor transimpedance amplifier showed a transimpedance gain of 42 dB$\Omega$, and an optical-to-electrical conversion $-$3 dB bandwidth of 9.5 GHz. The photoreceiver with a 7-transistor transimpedance/voltage amplifier exhibited a transimpedance gain of 63 dB$\Omega$, and an optical-to-electrical bandwidth of 3.3 GHz. Integrated PIN-HBT transimpedance photoreceivers using the base, collector and subcollector HBT layers as the p-i-n photodiode were fabricated and characterized. Discrete HBTs demonstrated 54 GHz and 51 GHz for $f\sb{T}$ and $f\sb{max}$, respectively. The transimpedance amplifier exhibited an electrical transimpedance bandwidth of 17 GHz and 10 GHz with and without a peaking inductor, and a gain of 40 dB$\Omega$. The integrated photoreceiver with a 10 $\mu$m x 10 $\mu$m p-i-n photodiode demonstrated an optical-to-electrical conversion $-$3 dB bandwidth of 7.1 GHz.

Published
1994

48. 3D Wafer-Scale Integration for RF and Digital Applications

Author

Chang-Chien, Patty, Gutierrez-Aitken, Augusto, Sandhu, Rajinder, Hennig, Kelly, Scott, Dennis, Zhou, Joe, Nam, Peter, Geiger, Craig, Poust, Ben, Parlee, Mattew, Thai, K., Phan, W., and Oyama, B.

Abstract

Northrop Grumman Space Technology has developed an integration technology that is capable of intimately integrating III-V semiconductor devices with Si CMOS under DARPA's COSMOS program. The integration approach is based on a direct face-to-face bonding between pre-fabricated III-V chiplets and CMOS wafers. It is capable of integrating CS (compound semiconductor) devices from smaller wafer substrates to a larger Si host wafer as well as integrating multiple CS technologies onto the same Si CMOS host wafer. This process can be applied to virtually any CS and Si technologies. Integrated differential amplifiers (DAs) have been demonstrated using this 3D AHI integration approach. This DA demonstration integrates the 0.18um Silicon CMOS technology with 6 layers of interconnections from Jazz Semiconductor and NGST's 0.4um emitter high speed HBT technology. Further integration details on AHI as well as demonstrated integrated circuit data will be presented in the full paper.

Published
2008
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49. Role of Dislocations in Hydrogen-Induced Exfoliation of Narrow Bandgap Semiconductors

Author

Noori, Atif, Hayashi, Sumiko L., Goorsky, Mark, Sandhu, Rajinder, Cavus, Abdullah, Gambin, V., and Gutierrez-Aitken, Augusto

Abstract

To investigate the role of dislocations in the exfoliation process, metamorphic buffer layers were implanted with a dose of 1.5E16 H2+/cm2 at an energy of 150 KeV. Two profiles were examined: a compositionally graded InxAl1-xAs buffer layer grown by molecular beam epitaxy on InP with an InAs cap layer (TD density = 5E6 cm-2) and an InAs layer grown directly on InP (TD density = 4E8 cm-2). Subsequent annealing of these implanted structures at 150{degree sign}C for 10 minutes caused interstitial hydrogen to diffuse away from the implanted region and settle at low energy sites - strained regions around dislocations. 5 hours annealing at 75{degree sign}C produced uniform surface blistering for both samples at the implantation depth. This effect is explained by the increased diffusivity of hydrogen at higher temperatures.

Published
2006
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