720 results on '"Honda, Yoshio"'
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2. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers.
3. Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium
4. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
5. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
6. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing
7. Anisotropic hole transport along [0001] and [112¯0] direction in p-doped (101¯0) GaN.
8. Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes
9. Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
10. Laser slice thinning of GaN-on-GaN high electron mobility transistors
11. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
12. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
13. Cyclotron production of 225Ac from an electroplated 226Ra target
14. WITHDRAWN: Observation of 2D-magnesium-intercalated gallium nitride superlattices
15. Demonstration of AlGaN-on-AlN p-n Diodes with Dopant-free Distributed Polarization Doping
16. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
17. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
18. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy
19. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures
20. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
21. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode
22. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing
23. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy.
24. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
25. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
26. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
27. Morphological study of InGaN on GaN substrate by supersaturation
28. How to obtain metal-polar untwinned high-quality (1 0 −1 3) GaN on m-plane sapphire
29. High-temperature thermal annealing of nonpolar (1 0 [formula omitted] 0) AlN layers sputtered on (1 0 [formula omitted] 0) sapphire
30. Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN.
31. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz
32. Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN
33. Stress relaxation of AlGaN on nonpolar m-plane GaN substrate
34. The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer.
35. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
36. Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field Effect Transistors
37. Photoelectron beam technology for SEM imaging with pixel-specific control of irradiation beam current
38. Novel electron beam technology using InGaN photocathode for high-throughput scanning electron microscope imaging
39. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic
40. A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes
41. Development in AlGaN homojunction tunnel junction deep UV LEDs
42. Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping
43. 15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W
44. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer
45. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ([formula omitted]) GaN homoepitaxial layers
46. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer
47. Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties
48. Effective neutron detection using vertical-type BGaN diodes.
49. Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions
50. Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes
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