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Density-functional calculations are used to identify one-atom-thick metallic In overlayers on the Si(111) surface, which have long been sought in quest of the ultimate two-dimensional (2D) limit of free-electron-like metallic properties. We predict two metastable single-layer In phases, one $\sqrt{7}\times\sqrt{3}$ phase with a coverage of 1.4 monolayer (ML; here 1 ML refers to one In atom per top Si atom) and the other $\sqrt{7}\times\sqrt{7}$ phase with 1.43 ML, which indeed match well with experimental evidences. Both phases reveal quasi-1D arrangements of protruded In atoms, leading to 2D-metallic but anisotropic band structures and Fermi surfaces. This directional feature contrasts with the free-electron-like In-overlayer properties that are known to persist up to the double-layer thickness, implying that we may have achieved the 2D limit of free-electron-like In overlayers in previous studies of double-layer In phases., Comment: 5 pages, 6 figures

Density-functional theory calculations are used to verify the atomic structure of the $\sqrt{3}$$\times$$\sqrt{3}$ silicene phase grown on the Ag(111) surface. Recent experimental studies strongly suggested that the previous double-layer silicene model should be replaced with a Ag-mixed double-layer model resembling the top layers of the Ag/Si(111)-($\sqrt{3}$$\times$$\sqrt{3}$) surface. In our calculations, the Ag-mixed double-layer model is indeed energetically favored over the double-layer silicene model and well reproduces the reported scanning-tunneling microscopy and spectroscopy data. Especially, the structural origin of the experimental band structure is clarified as the top Ag-Si mixed layer, unlike the experimental interpretations as either a silicene layer or the Ag(111) substrate., Comment: 5 pages, 4 figures, preprint version (2016 FEB)

Density-functional calculations are used to verify the atomic structure of the hexagonal In/Si(111)-($\sqrt{7}\times\sqrt{3}$) surface, which has been considered to represent an ultimate two-dimensional (2D) limit of metallic In overlayers. Contrary to the prevailing assumption, this surface consists of not a single layer but a double layer of In atoms, which corresponds to a hexagonal deformation of the well-established $rectangular$ In double layer formed on Si(111)-($\sqrt{7}\times\sqrt{3}$) [Park $et$ $al$., Phys. Rev. Lett. 109, 166102 (2012)]. The same double-layer thickness accounts well for the typical coexistence of the hexagonal and rectangular phases and their similar 2D electronic structures. It is thus conclusive that, regardless of rectangular or hexagonal, the In/Si(111)-($\sqrt{7}\times\sqrt{3}$) surface does not represent an one-atom-thick In overlayer., Comment: 5 pages, 4 figures, preprint version (2015 MAR)

We identify the atomic structure of the Au/Si(111)-5x2 surface by using density functional theory calculations. With seven Au atoms per unit cell, our model forms a bona fide 5x2 atomic structure, which is energetically favored over the leading model of Erwin, Barke, and Himpsel [Phys. Rev. B 80, 155409 (2009)] and well reproduces the Y- and V-shaped 5x2 STM images. This surface is metallic with a prominent half-filled band of surface states, mostly localized around the Au-chain area. The correct identification of the atomic and band structure of the clean surface further clarifies the adsorption structure of Si adatoms and the physical origin of the intriguing metal-to-insulator transition driven by Si adatoms., Comment: 4 pages, 3 figures

We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the interface with the film to have nearly linear dispersion with an effective mass about 20 times lighter than bulk Si and comparable to graphene. The reduction of mass can be accounted for by repulsive interaction between neighboring bands of the metal film and Si substrate. Our result suggests a promising way to take advantage of massless carriers in silicon-based thin-film devices, which can also be applied for various other semiconductor devices., Comment: 4 pages, 4 figures, accepted for publication in Physical Review Letters