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The quest to solve hard combinatorial optimization problems efficiently -- still a longstanding challenge for traditional digital computers -- has inspired the exploration of many alternate computing models and platforms. As a case in point, oscillator networks offer a potentially promising energy efficient and scalable option. However, prior oscillator-based combinatorial optimization solvers have primarily focused on quadratic combinatorial optimization problems that consider only pairwise interaction among the oscillators. In this work, we propose a new computational model based on the maximum entropy production (MEP) principle that exploits higher order interactions among the oscillators, and demonstrate its application in solving the non-quadratic maximum satisfiability (MaxSAT) problem. We demonstrate that the solution to the MaxSAT problem can be directly mapped to the entropy production rate in the oscillator network, and subsequently, propose an area-efficient hardware implementation that leverages Compute-in-Memory (CiM) primitives. Using experiments along with analytical and circuit simulations, we elucidate the performance of the proposed approach in computing high-quality optimal / near-optimal solutions to the MaxSAT problem. Our work not only reveals how oscillators can solve non-quadratic combinatorial optimization problems such as MaxSAT but also extends the application of this dynamical system-based approach to a broader class of problems that can be easily decomposed to the MaxSAT solution.

Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET operation entails a fundamental trade-off between the read and the program operations. To overcome this trade-off, we propose in this work, a novel device, Mott-FeFET, that aims to replace the Silicon channel of the FeFET with VO2- a material that exhibits an electrically driven insulator-metal phase transition. The Mott-FeFET design, which demonstrates a (ferroelectric) polarization-dependent threshold voltage, enables the read current distinguishability (i.e., the ratio of current sensed when the Mott-FeFET is in state 1 and 0, respectively) to be independent of the program voltage. This enables the device to be programmed at low voltages without affecting the ability to sense/read the state of the device. Our work provides a pathway to realize low-voltage and energy-efficient non-volatile memory solutions., Comment: 23 pages, manuscript and supplementary information combined

Coupled electronic oscillators have recently been explored as a compact, integrated circuit- and room temperature operation- compatible hardware platform to design Ising machines. However, such implementations presently require the injection of an externally generated second-harmonic signal to impose the phase bipartition among the oscillators. In this work, we experimentally demonstrate a new electronic autaptic oscillator (EAO) that uses engineered feedback to eliminate the need for the generation and injection of the external second harmonic signal to minimize the Ising Hamiltonian. The feedback in the EAO is engineered to effectively generate the second harmonic signal internally. Using this oscillator design, we show experimentally, that a system of capacitively coupled EAOs exhibits the desired bipartition in the oscillator phases, and subsequently, demonstrate its application in solving the computationally hard Maximum Cut (MaxCut) problem. Our work not only establishes a new oscillator design aligned to the needs of the oscillator Ising machine but also advances the efforts to creating application specific analog computing platforms., Comment: 18 pages, 5 figures

2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moir\'e periodicity in twisted graphene systems produces flat Chern bands. The recent observation of anomalous Hall effect (AHE) and orbital magnetism in twisted bilayer graphene has been associated with spontaneous symmetry breaking of such Chern bands. However, the valley Hall state as a precursor of AHE state, when time-reversal symmetry is still protected, has not been observed. Our work probes this precursor state using the valley Hall effect. We show that broken inversion symmetry in twisted double bilayer graphene (TDBG) facilitates the generation of bulk valley current by reporting the first experimental evidence of nonlocal transport in a nearly flat band system. Despite the spread of Berry curvature hotspots and reduced quasiparticle velocities of the carriers in these flat bands, we observe large nonlocal voltage several micrometers away from the charge current path -- this persists when the Fermi energy lies inside a gap with large Berry curvature. The high sensitivity of the nonlocal voltage to gate tunable carrier density and gap modulating perpendicular electric field makes TDBG an attractive platform for valley-twistronics based on flat bands., Comment: 14 pages, 3 figures and supplementary information

We present a quick and reliable method to cut 2D materials for creating 2D twisted heterostructures and devices. We demonstrate the effectiveness of using a tapered fibre scalped for cutting graphene. Electrical transport measurements show evidence of the desired twist between the graphene layers fabricated using our technique. Statistics of the number of successfully twisted stacks made using our method is compared with h-BN assisted tear-and-stack method. Also, our method can be used for twisted stack fabrication of materials that are few nanometers thick. Finally, we demonstrate the versatility of the tapered fibre scalped for other shaping related applications for sensitive 2D materials., Comment: 12+6 pages, 4+5 figures. The videos are available at https://sites.google.com/view/nanoelectronicstifr/publications