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We report the impact of capping layers on vanadate based transparent conductive oxides (TCOs) to prolong the thermal stability with a minimal loss of resistivity during heat treatment in ambient environment. In the present study, various protecting layers (amorphous Al2O3, LaAlO3 (LAO), TiO2 grown in base pressure and TiO2 deposited under oxygen partial pressure) are grown in-situ on polycrystalline perovskite SrVO3 (SVO) thin films using Pulsed Laser Deposition (PLD). The results show that amorphous LaAlO3 is the most promising protection layer among the oxide layers, to preserve both electrical and optical properties of perovskite SVO films from natural as well as artificial aging. Our present approach for a capping layer on SVO may address the long-term stability issues of correlated TCOs and would open an opportunity for the future oxide electronics applications.

Metallic ferromagnetic transition metal dichalcogenides have emerged as important building blocks for scalable magnonics and memory applications. Downscaling such systems to the ultra-thin limit is critical to integrate them into technology. Here, we achieved layer-by-layer control over the transition metal dichalcogenide Cr$_{1.6}$Te$_{2}$ by using pulsed laser deposition, and we uncovered the minimum critical thickness above which room temperature magnetic order is maintained. The electronic and magnetic structure is explored experimentally and theoretically and it is shown that the films exhibit strong in-plane magnetic anisotropy as a consequence of large spin-orbit effects. Our study elucidates both magnetic and electronic properties of Cr$_{1.6}$Te$_{2}$, and corroborates the importance of intercalation to tune the magnetic properties of nanoscale materials architectures., Comment: 21 pages, 4 figures

Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiOx/TaOy/Pt devices, the exchange of OV between the device and the environment upon the application of electrical stress. From a combination of experiments and theoretical simulations we determine that both TiOx and TaOy layers oxidize, via environmental oxygen uptake, during the electroforming process. Once the memristive effect is stabilized (post-forming behavior) our results suggest that oxygen exchange with the environment is suppressed and the OV dynamics that drives the memristive behavior is restricted to an internal electromigration between TiOx and TaOy layers. Our work provides relevant information for the design of reliable binary oxide memristive devices., Comment: preprint 20 pages, 4 figures

Transition-metal oxides with an ABO$_3$ perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. Using the Jahn-Teller active praseodymium vanadate Pr$^{3+}$V$^{3+}$O$_3$ compound as a model system, we show that PrVO$_3$ N\'eel temperature T$_N$ can be raised by 40 K with respect to the bulk when grown as thin films. Using advanced experimental techniques, this enhancement is unambiguously ascribed to a tetragonality resulting from the epitaxial compressive strain experienced by the films. First-principles simulations not only confirm experimental results, but they also reveal that the strain promotes an unprecedented orbital-ordering of the V$^{3+}$ d electrons, strongly favouring antiferromagnetic interactions. These results show that an accurate control of structural aspects is the key for unveiling unexpected phases in oxides.

The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO3 appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO3 thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron doping at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases., Comment: 13 pages, 5 figures. To appear in AIP Advanced

The experimental observation that vanadate superlattices (LaVO$_3$)$_m$/SrVO$_3$ show ferromagnetism up to room temperature [U.\ L\"uders {\it et al.}, Phys.\ Rev.\ B {\bf 80}, 241102R (2009)] is investigated by means of density functional theory. First, the influence of the density functional on the electronic and magnetic structure of bulk ${\rm LaVO_3}$ is discussed. Second, the band structure of a (LaVO$_3$)$_m$/SrVO$_3$ slab for $m=5$ and 6 is calculated. Very different behaviors for odd and even values of $m$ are found: In the odd case lattice relaxation results into a buckling of the interface VO$_2$ layers that leads to spin-polarized interfaces. In the even case a decoupling of the interface VO$_2$ layers from the LaO layers is obtained, confining the interface electrons into a two-dimensional electron gas. The orbital reconstruction at the interface due to the lattice relaxation is discussed., Comment: 8 pages, 7 figures

Over the past few years, intensive studies of ultrathin epitaxial films of perovskite oxides have often revealed exciting properties like giant magnetoresistive tunnelling and electric field effects. Spinel oxides appear as even more versatile due to their more complex structure and the resulting many degrees of freedom. Here we show that the epitaxial growth of nanometric NiFe2O4 films onto perovskite substrates allows the stabilization of novel ferrite phases with properties dramatically differing from bulk ones. Indeed, NiFe2O4 films few nanometres thick have a saturation magnetization at least twice that of the bulk compound and their resistivity can be tuned by orders of magnitude, depending on the growth conditions. By integrating such thin NiFe2O4 layers into spin-dependent tunnelling heterostructures, we demonstrate that this versatile material can be useful for spintronics, either as a conductive electrode in magnetic tunnel junctions or as a spin-filtering insulating barrier in the little explored type of tunnel junction called spin-filter. Our findings are thus opening the way for the realisation of monolithic spintronics architectures integrating several layers of a single material, where the layers are functionalised in a controlled manner.

Bulk NiFe2O4 is an insulating ferrimagnet. Here, we report on the epitaxial growth of spinel NiFe2O4 ultrathin films onto SrTiO3 single-crystals. We will show that - under appropriate growth conditions - epitaxial stabilization leads to the formation of a spinel phase with magnetic and electrical properties that radically differ from those of the bulk material : an enhanced magnetic moment (Ms) - about 250% larger - and a metallic character. A systematic study of the thickness dependence of Ms allows to conclude that its enhanced value is due to an anomalous distribution of the Fe and Ni cations among the A and B sites of the spinel structure resulting from the off-equilibrium growth conditions and to interface effects. The relevance of these findings for spinel- and, more generally, oxide-based heterostructures is discussed. We will argue that this novel material could be an alternative ferromagetic-metallic electrode in magnetic tunnel junctions., Comment: accepted for publication in Phys. Rev. B